PPJS6809
30V P-Channel Enhancement Mode MOSFET
Voltage
Features
-30 V
Current
-2.6A
SOT-23 6L
Unit : inch(mm)
R
DS(ON)
, V
GS
@-10V, I
D
@-2.6A<115mΩ
R
DS(ON)
, V
GS
@-4.5V, I
D
@-1.7A<150mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case:
SOT-23 6L
Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0005 ounces, 0.014 grams
Marking: ST9
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
a
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
LIMIT
o
UNITS
V
V
A
A
W
mW/
o
C
o
-30
+20
-2.6
-10.4
1.25
10
-55~150
100
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
June 8,2015-REV.03
Page 1
PPJS6809
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=-1.0A, V
GS
=0V
-
-
-
-0.77
-1.5
-1.2
A
V
td
(on)
tr
td
(off)
tf
V
DD
=-15V, I
D
=-2.6A,
V
GS
=-10V,
R
G
=6Ω
(Note 1,2)
-
-
-
-
5
30
25
8
-
-
-
-
ns
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
V
DS
=-15V, I
D
=-2.6A,
V
GS
=-10V
(Note 1,2)
V
DS
=-15V, V
GS
=0V,
f=1.0MHZ
-
-
-
-
-
-
9.8
1.5
2.2
396
47
36
-
-
-
-
-
-
pF
nC
BV
DSS
V
GS(th)
R
DS(on)
I
DSS
I
GSS
V
GS
=0V, I
D
=-250uA
V
DS
=V
GS
, I
D
=-250uA
V
GS
=-10V, I
D
=-2.6A
V
GS
=-4.5V, I
D
=-1.7A
V
DS
=-30V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
-30
-1
-
-
-
-
-
-1.31
93
116
-0.01
+10
-
-2.1
115
150
-1
+100
mΩ
uA
nA
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper
4. The maximum current rating is package limited
June 8,2015-REV.03
Page 2
PPJS6809
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
June 8,2015-REV.03
Page 3
PPJS6809
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Threshold Voltage Variation with Temperature
Fig.9 Capacitance vs. Drain-Source Voltage
June 8,2015-REV.03
Page 4
PPJS6809
PART NO PACKING CODE VERSION
Part No Packing Code
PJS6809_S1_00001
PJS6809_S2_00001
Package Type
SOT-23 6L
SOT-23 6L
Packing type
3K pcs / 7” reel
10K pcs / 13” reel
Marking
ST9
ST9
Version
Halogen free
Halogen free
MOUNTING PAD LAYOUT
0.024
(0.60)
0.026
(0.67)
0.037
(0.95)
0.037
(0.95)
June 8,2015-REV.03
0.096
(2.43)
Page 5
电子工程世界
