PPJX138L
60V N-Channel Enhancement Mode MOSFET
Voltage
Features
60 V
Current
160mA
SOT-563
Unit : inch(mm)
R
DS(ON)
, V
GS
@10V, I
D
@160mA<4.2Ω
R
DS(ON)
, V
GS
@4.5V, I
D
@100mA<5Ω
R
DS(ON)
, V
GS
@2.5V, I
D
@50mA<7Ω
R
DS(ON)
, V
GS
@1.8V, I
D
@20mA<12Ω
Advanced Trench Process Technology
ESD Protected
Specially Designed for Relay driver, Speed line drive, etc.
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-563 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00009 ounces, 0.0026 grams
Marking: X8L
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
T
A
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
R
θJA
UNITS
V
V
mA
mA
mW
mW/
o
C
o
o
LIMIT
60
+20
160
800
223
1.8
-55~150
560
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
October 06,2014-REV.00
`
Page 1
PPJX138L
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
V
GS(th)
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V,I
D
=160mA
Drain-Source On-State Resistance
R
DS(on)
V
GS
=4.5V,I
D
=100mA
V
GS
=2.5V,I
D
=50mA
V
GS
=1.8V,I
D
=20mA
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Dynamic
(Note 4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Diode
Maximum Continuous Drain-Source
Diode Forward Current
Diode Forward Voltage
I
S
V
SD
---
I
S
=160mA, V
GS
=0V
-
-
-
0.8
160
1.1
mA
V
Q
g
Q
gs
Q
gd
Ciss
Coss
Crss
td
(on)
tr
td
(off)
tf
V
DS
=15V, I
D
=160mA,
V
GS
=4.5V
(Note 1,2)
V
DS
=15V, V
GS
=0V,
f=1.0MHZ
V
DD
=10V, I
D
=160mA,
V
GS
=10V,
R
G
=6Ω
(Note 1,2)
-
-
-
-
-
-
-
-
-
-
0.7
0.33
0.2
15
8.4
4.2
7
22
21
25
-
-
-
-
-
-
-
-
-
-
ns
pF
nC
I
DSS
I
GSS
V
DS
=60V,V
GS
=0V
V
GS
=+20V,V
DS
=0V
60
0.8
-
-
-
-
-
-
-
1.2
2.5
2.8
3.7
6
0.01
+1.0
-
1.5
4.2
5
7
12
1
+10
uA
uA
Ω
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNITS
o
NOTES :
1. Pulse width<300us, Duty cycle<2%
2. Essentially independent of operating temperature typical characteristics.
3. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper
4. Guaranteed by design, not subject to production testing.
October 06,2014-REV.00
`
Page 2
PPJX138L
TYPICAL CHARACTERISTIC CURVES
Fig.1 On-Region Characteristics
Fig.2 Transfer Characteristics
Fig.3 On-Resistance vs. Drain Current
Fig.4 On-Resistance vs. Junction temperature
Fig.5 On-Resistance Variation with VGS.
Fig.6 Body Diode Characteristics
October 06,2014-REV.00
`
Page 3
PPJX138L
TYPICAL CHARACTERISTIC CURVES
Fig.7 Gate-Charge Characteristics
Fig.8 Breakdown Voltage Variation vs. Temperature
Fig.9 Threshold Voltage Variation with Temperature.
Fig.10 Capacitance vs. Drain-Source Voltage.
October 06,2014-REV.00
`
Page 4
PPJX138L
PART NO PACKING CODE VERSION
Part No Packing Code
PJX138L_R1_00001
PJX138L_R2_00001
Package Type
SOT-563
SOT-563
Packing type
4K pcs / 7” reel
10K pcs / 13” reel
Marking
X8L
X8L
Version
Halogen free
Halogen free
MOUNTING PAD LAYOUT
October 06,2014-REV.00
`
Page 5
电子工程世界
