DISCRETE SEMICONDUCTORS
DATA SHEET
PMBS3904
NPN general purpose transistor
Product data sheet
Supersedes data of 1999 Apr 22
2004 Feb 02
NXP Semiconductors
Product data sheet
NPN general purpose transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
General purpose switching and amplification, e.g.
telephony and professional communication equipment.
DESCRIPTION
handbook, halfpage
PMBS3904
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
NPN transistor in a plastic SOT23 package.
PNP complement: PMBS3906.
MARKING
TYPE NUMBER
PMBS3904
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
PMBS3904
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
*O4
Top view
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current capability
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
60
40
6
100
200
200
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2004 Feb 02
2
NXP Semiconductors
Product data sheet
NPN general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
C
= 0; V
EB
= 5 V
V
CE
= 1 V; note 1; (see Fig.2)
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 100 mA
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 100
µA;
V
CE
= 5 V; R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
40
70
100
60
30
−
−
650
−
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
PMBS3904
UNIT
K/W
MAX.
50
50
−
−
300
−
−
200
300
850
950
4
12
−
5
UNIT
nA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
I
C
= 10 mA; V
CE
= 20 V; f = 100 MHz 180
Switching times (between 10% and 90% levels);
(see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 10 mA; I
Bon
= 1 mA;
I
Boff
=
−
1 mA; V
CC
= 3 V;
V
BB
=
−1.9
V
−
−
−
−
−
−
110
50
60
1 200
1 000
200
ns
ns
ns
ns
ns
ns
2004 Feb 02
3
NXP Semiconductors
Product data sheet
NPN general purpose transistor
PMBS3904
handbook, full pagewidth
250
MBH723
hFE
200
VCE = 5 V
150
100
50
0
10
−2
10
−1
1
10
10
2
IC (mA)
10
3
Fig.2 DC current gain; typical values.
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 5 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270
Ω.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.3 Test circuit for switching times.
2004 Feb 02
4
NXP Semiconductors
Product data sheet
NPN general purpose transistor
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
PMBS3904
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Feb 02
5
