PMEG3010CEH; PMEG3010CEJ
1 A very low V
F
MEGA Schottky barrier rectifiers
Rev. 02 — 22 March 2007
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an
integrated guard ring for stress protection, encapsulated in small and flat lead
Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
PMEG3010CEH
PMEG3010CEJ
SOD123F
SOD323F
JEITA
-
SC-90
single
single
Configuration
Type number
1.2 Features
I
I
I
I
Forward current: I
F
≤
1 A
Reverse voltage: V
R
≤
30 V
Very low forward voltage
Small and flat lead SMD plastic packages
1.3 Applications
I
I
I
I
I
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 2.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 1 A
[1]
Conditions
T
sp
≤
55
°C
Min
-
-
-
Typ
-
-
450
Max
1
30
520
Unit
A
V
mV
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
NXP Semiconductors
PMEG3010CEH; PMEG3010CEJ
1 A very low V
F
MEGA Schottky barrier rectifiers
2. Pinning information
Table 3.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Symbol
1
2
sym001
1
001aab540
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Package
Name
PMEG3010CEH
PMEG3010CEJ
-
SC-90
Description
plastic surface-mounted package; 2 leads
plastic surface-mounted package; 2 leads
Version
SOD123F
SOD323F
Type number
4. Marking
Table 5.
Marking codes
Marking code
C8
EN
Type number
PMEG3010CEH
PMEG3010CEJ
PMEG3010CEH_PMEG3010CEJ_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 22 March 2007
2 of 10
NXP Semiconductors
PMEG3010CEH; PMEG3010CEJ
1 A very low V
F
MEGA Schottky barrier rectifiers
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
FRM
I
FSM
Parameter
reverse voltage
forward current
repetitive peak forward current
non-repetitive peak forward
current
PMEG3010CEH
PMEG3010CEJ
P
tot
total power dissipation
PMEG3010CEH
PMEG3010CEJ
T
j
T
amb
T
stg
[1]
[2]
Conditions
T
sp
≤
55
°C
t
p
≤
1 ms;
δ ≤
0.25
square wave;
t
p
= 8 ms
Min
-
-
-
Max
30
1
7
Unit
V
A
A
-
-
T
amb
≤
25
°C
[1]
[2]
[1]
[2]
9
10
375
830
350
830
150
+150
+150
A
A
mW
mW
mW
mW
°C
°C
°C
-
-
-
-
-
−65
−65
junction temperature
ambient temperature
storage temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
Table 7.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
PMEG3010CEH
PMEG3010CEJ
R
th(j-sp)
thermal resistance from
junction to solder point
PMEG3010CEH
PMEG3010CEJ
[1]
[2]
[3]
[4]
Conditions
in free air
[1]
Min
Typ
Max
Unit
[2]
[3]
[2]
[3]
[4]
-
-
-
-
-
-
-
-
330
150
350
150
K/W
K/W
K/W
K/W
-
-
-
-
60
55
K/W
K/W
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point of cathode tab.
PMEG3010CEH_PMEG3010CEJ_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 22 March 2007
3 of 10
NXP Semiconductors
PMEG3010CEH; PMEG3010CEJ
1 A very low V
F
MEGA Schottky barrier rectifiers
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
F
= 700 mA
I
F
= 1 A
I
R
reverse current
V
R
= 5 V
V
R
= 10 V
V
R
= 30 V
C
d
[1]
Conditions
[1]
Min
-
-
-
-
-
-
-
-
-
-
Typ
200
260
330
400
420
450
1.2
1.8
10
90
Max
240
310
390
440
450
520
-
-
50
100
Unit
mV
mV
mV
mV
mV
mV
µA
µA
µA
pF
diode capacitance
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
R
= 1 V; f = 1 MHz
PMEG3010CEH_PMEG3010CEJ_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 22 March 2007
4 of 10
NXP Semiconductors
PMEG3010CEH; PMEG3010CEJ
1 A very low V
F
MEGA Schottky barrier rectifiers
10
4
I
F
(mA)
10
3
(1)
(2)
(3)
(4)
(5)
006aaa752
10
5
4
I
R
10
(µA)
10
3
(1)
006aaa753
(2)
(3)
10
2
10
10
2
(4)
1
10
10
−1
1
10
−2
(5)
10
−3
10
−1
0.0
10
−4
0.2
0.4
V
F
(V)
0.6
0
10
20
V
R
(V)
30
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
(1) T
amb
= 150
°C
(2) T
amb
= 125
°C
(3) T
amb
= 85
°C
(4) T
amb
= 25
°C
(5) T
amb
=
−40 °C
Fig 1. Forward current as a function of forward
voltage; typical values
200
C
d
(pF)
160
Fig 2. Reverse current as a function of reverse
voltage; typical values
006aaa754
120
80
40
0
0
10
20
V
R
(V)
30
f = 1 MHz; T
amb
= 25
°C
Fig 3. Diode capacitance as a function of reverse voltage; typical values
PMEG3010CEH_PMEG3010CEJ_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 22 March 2007
5 of 10
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