PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
Rev. 1 — 21 December 2010
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Trench MOSFET technology
Very fast switching
1.3 Applications
High-side loadswitch
High-speed line driver
Relay driver
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source
voltage
gate-source
voltage
drain current
drain-source
on-state
resistance
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; I
D
= -2.4 A;
pulsed; t
p
≤
300 µs;
δ ≤
0.01;
T
j
= 25 °C
[1]
Conditions
T
amb
= 25 °C
Min
-
-12
-
-
Typ
-
-
-
48
Max Unit
-20
12
-3.5
55
V
V
A
mΩ
Static characteristics
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm
2
.
Nexperia
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G
S
D
gate
source
drain
1
2
S
017aaa094
Simplified outline
3
Graphic symbol
D
G
SOT23 (TO-236AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
PMV48XP
TO-236AB
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 4.
PMV48XP
[1]
% = placeholder for manufacturing site code
Marking codes
Marking code
[1]
KN%
Type number
PMV48XP
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 1 — 21 December 2010
©
2 of 15
Nexperia B.V. 2017. All rights reserved
Nexperia
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
5. Limiting values
Table 5.
Symbol
V
DS
V
GS
I
D
I
DM
P
tot
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
peak drain current
total power dissipation
V
GS
= -4.5 V; T
amb
= 25 °C
V
GS
= -4.5 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
T
sp
= 25 °C
T
j
T
amb
T
stg
I
S
[1]
[2]
[2]
[1]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
amb
= 25 °C
Min
-
-12
-
-
-
-
-
-
-
-55
-65
T
amb
= 25 °C
[1]
Max
-20
12
-3.5
-2.2
-14
510
930
4150
150
150
150
-1
Unit
V
V
A
A
A
mW
mW
mW
°C
°C
°C
A
junction temperature
ambient temperature
storage temperature
source current
Source-drain diode
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
120
P
der
(%)
80
017aaa123
120
I
der
(%)
80
017aaa124
40
40
0
−75
−25
25
75
125
T
j
(°C)
175
0
−75
−25
25
75
125
T
j
(°C)
175
Fig 1.
Normalized total power dissipation as a
function of junction temperature
Fig 2.
Normalized continuous drain current as a
function of junction temperature
PMV48XP
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 1 — 21 December 2010
©
3 of 15
Nexperia B.V. 2017. All rights reserved
Nexperia
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
−10
2
I
D
(A)
−10
017aaa125
Limit R
DSon
= V
DS
/I
D
(1)
(2)
−1
(3)
(4)
(5)
(6)
−10
−1
−10
−2
−10
−1
−1
−10
V
DS
(V)
−10
2
I
DM
= single pulse
(1) t
p
= 100 µs
(2) t
p
= 1 ms
(3) t
p
= 10 ms
(4) DC; T
sp
= 25 °C
(5) t
p
= 100 ms
(6) DC; T
amb
= 25 °C; drain mounting pad 6 cm
2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1]
[2]
Min
-
-
-
Typ
213
117
25
Max
245
135
30
Unit
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
2
.
PMV48XP
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 1 — 21 December 2010
©
4 of 15
Nexperia B.V. 2017. All rights reserved
Nexperia
PMV48XP
20 V, 3.5 A P-channel Trench MOSFET
10
3
Z
th(j-a)
(K/W)
10
2
017aaa126
duty cycle = 1
0.75
0.5
0.25
0.1
0.05
0.33
0.2
10
0.02
0
0.01
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 4.
10
3
Z
th(j-a)
(K/W)
duty cycle = 1
10
2
0.5
0.25
0.1
10
0.33
0.2
0.05
0.75
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa127
0
0.02
0.01
1
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for drain 6 cm
2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV48XP
All information provided in this document is subject to legal disclaimers.
Product data sheet
Rev. 1 — 21 December 2010
©
5 of 15
Nexperia B.V. 2017. All rights reserved
