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PR1004GL

Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon,

器件类别：分立半导体    二极管   

厂商名称：Vishay(威世)

厂商官网：http://www.vishay.com

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
Vishay(威世)
包装说明
O-PALF-W2
Reach Compliance Code
unknown
ECCN代码
EAR99
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
O-PALF-W2
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-65 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
认证状态
Not Qualified
最大重复峰值反向电压
400 V
最大反向恢复时间
0.15 µs
表面贴装
NO
端子形式
WIRE
端子位置
AXIAL
文档预览
PR1001G/L–PR1007G/L
Vishay Lite–On Power Semiconductor
1.0A Fast Recovery Glass Passivated Rectifier
Features
D
D
D
D
Glass passivated die construction
Diffused junction
Fast switching for high efficiency
High current capability and low forward
voltage drop
DO – 41
A – 405
D
Surge overload rating to 30A peak
D
Low reverse leakage current
D
Plastic material – UL Recognition flammability
classification 94V–0
14 451
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Repetitive peak reverse voltage
g
=Working peak reverse voltage
DC Blocking lt
=DC Bl ki voltage
Test
Conditions
Type
PR1001G/GL
PR1002G/GL
PR1003G/GL
PR1004G/GL
PR1005G/GL
PR1006G/GL
PR1007G/GL
Symbol
V
RRM
=V
RWM
V
=V
R
Value
50
100
200
400
600
800
1000
30
1
–65...+150
Unit
V
V
V
V
V
V
V
A
A
°
C
Peak forward surge current
Average forward current
T
A
=55
°
C
Junction and storage temperature range
I
FSM
I
FAV
T
j
=T
stg
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
Reverse recovery time
y
Test
Conditions
I
F
=1A
T
A
=25
°
C
T
A
=100
°
C
I
F
=1A, I
R
=0.5A,
I
rr
=0.25A
V
R
=4V, f=1MHz
Type
Symbol Min Typ Max
V
F
I
R
I
R
t
rr
t
rr
t
rr
C
D
C
D
R
thJA
1.3
5
50
150
250
500
15
8
95
Unit
V
m
A
m
A
ns
ns
ns
pF
pF
K/W
Diode capacitance
Thermal resistance
junction to ambient
PR1001G/GL–1004G/GL
PR1005G/GL
PR1006G/GL–1007G/GL
PR1001G/GL–1004G/GL
PR1005G/GL–1007G/GL
Rev. A2, 24-Jun-98
1 (4)
PR1001G/L–PR1007G/L
Vishay Lite–On Power Semiconductor
Characteristics
(T
j
= 25
_
C unless otherwise specified)
I
FAV
– Average Forward Current ( A )
1.0
0.8
Single phase half–wave
60 Hz resistive or inductive load
I
FSM
– Peak Forward Surge Current ( A )
30
8.3 ms Single Half–Sine–Wave
JEDEC method
20
0.6
0.4
10
0.2
0
25
15490
0
1
10
Number of Cycles at 60 Hz
100
50
75
100
125 150 175
200
15492
T
amb
– Ambient Temperature (
°C
)
Figure 1. Max. Average Forward Current vs.
Ambient Temperature
10
Figure 3. Max. Peak Forward Surge Current vs.
Number of Cycles
100
T
j
= 25°C
C
D
– Diode Capacitance ( pF )
f = 1 MHz
I
F
– Forward Current ( A )
1.0
PR1001 – PR1004
10
PR1005 – PR1007
0.1
0.01
0.6
15491
T
j
= 25°C
Pulse Width = 300
µs
1
1.4
15493
0.8
1.0
1.2
1
10
V
R
– Reverse Voltage ( V )
100
V
F
– Forward Voltage ( V )
Figure 2. Typ. Forward Current vs. Forward Voltage
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
2 (4)
Rev. A2, 24-Jun-98
PR1001G/L–PR1007G/L
Vishay Lite–On Power Semiconductor
Dimensions in mm
14447
Case: molded plastic
Polarity: cathode band
Approx. weight: DO–41 0.35 grams,
A–405 0.20 grams
Mounting position: any
Marking: type number
Rev. A2, 24-Jun-98
3 (4)
PR1001G/L–PR1007G/L
Vishay Lite–On Power Semiconductor
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98
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参数对比
与PR1004GL相近的元器件有：PR1005GL、PR1003GL、PR1004G、PR1002GL、PR1001G、PR1001GL、PR1002G、PR1005G、PR1003G。描述及对比如下：
型号 PR1004GL PR1005GL PR1003GL PR1004G PR1002GL PR1001G PR1001GL PR1002G PR1005G PR1003G
描述 Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41, Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-41,
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
元件数量 1 1 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
最大输出电流 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 400 V 600 V 200 V 400 V 100 V 50 V 50 V 100 V 600 V 200 V
最大反向恢复时间 0.15 µs 0.25 µs 0.15 µs 0.15 µs 0.15 µs 0.15 µs 0.15 µs 0.15 µs 0.25 µs 0.15 µs
表面贴装 NO NO NO NO NO NO NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL
厂商名称 Vishay(威世) - - Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世) Vishay(威世)
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器件捷径:
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