PHOTOCOUPLER
PS2861-1
HIGH ISOLATION VOLTAGE
4-PIN SOP PHOTOCOUPLER
−NEPOC
Series−
DESCRIPTION
The PS2861-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon
phototransistor.
The PS2861-1 meets insulation thickness 0.4 mm and BSI′s insulation supplementary approved.
The package has shield effect to cut off ambient light, and is mounted in a plastic SOP (Small Outline Package) for
high density applications.
FEATURES
• Isolation distance (0.4 mm MIN.)
• High isolation voltage (BV = 2 500 Vr.m.s.)
• SOP (Small Outline Package) type
• High-speed switching (t
r
= 4
µ
s TYP., t
f
= 5
µ
s TYP.)
• Ordering number of tape product: PS2861-1-F3, F4
• Safety standards: PS2861-1
• UL approved: File No. E72422 (S)
• BSI approved: No. 8514, 8515
APPLICATIONS
• Modem
• Programmable logic controllers
• Power supply
Document No. PN10258EJ01V0DS (1st edition)
(Previous No. P15093EJ2V0DS00)
Date Published February 2003 CP(K)
The mark
shows major revised points.
PS2861-1
PACKAGE DIMENSIONS (UNIT: mm)
TOP VIEW
2.7±0.3
4
3
1. Anode
2. Cathode
3. Emitter
4. Collector
1
2
7.0±0.3
4.4
0.1±0.1
2.0±0.1
0.15
+0.10
–0.05
0.5±0.3
1.27
0.4±0.1
0.12
M
PHOTOCOUPLER CONSTRUCTION
Parameter
Air Distance
Creepage Distance
Isolation Distance
Unit (MIN.)
4.5 mm
4.5 mm
0.4 mm
MARKING
PS2861-1
N61
003
Assembly Lot
Last number of type: 61
"N" of NEC
0 03
Week Assembled
Year Assembled
(Last 1 Digit)
2
Data Sheet PN10258EJ01V0DS
PS2861-1
ORDERING INFORMATION (Solder Contains Lead)
Part Number
PS2861-1
PS2861-1-F3
PS2861-1-F4
Package
4-pin SOP
Packing Style
50 pcs (Tape 50 pcs cut)
Embossed Tape 3 500 pcs/reel
Application Part Number
PS2861-1
*1
*1
For the application of the Safety Standard, following part number should be used.
ORDERING INFORMATION (Pb-Free)
Part Number
PS2861-1-A
PS2861-1-F3-A
PS2861-1-F4-A
Package
4-pin SOP
Packing Style
50 pcs (Tape 50 pcs cut)
Embossed Tape 3 500 pcs/reel
Application Part Number
PS2861-1
*1
*1
For the application of the Safety Standard, following part number should be used.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C,
unless otherwise specified)
Parameter
Diode
Forward Current (DC)
Reverse Voltage
Power Dissipation Derating
Power Dissipation
Peak Forward Current
Transistor
*1
Symbol
I
F
V
R
Ratings
50
6
0.6
60
1.0
40
5
40
1.2
120
2 500
–55 to +100
–55 to +150
Unit
mA
V
mW/°C
mW
A
V
V
mA
mW/°C
mW
Vr.m.s.
°C
°C
∆
P
D
/°C
P
D
I
FP
V
CEO
V
ECO
I
C
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
Power Dissipation Derating
Power Dissipation
∆
P
C
/°C
P
C
BV
T
A
T
stg
Isolation Voltage
*2
Operating Ambient Temperature
Storage Temperature
*1
PW = 100
µ
s, Duty Cycle = 1 %
*2
AC voltage for 1 minute at T
A
= 25 °C, RH = 60 % between input and output
Data Sheet PN10258EJ01V0DS
3
PS2861-1
ELECTRICAL CHARACTERISTICS (T
A
= 25
°C)
Parameter
Diode
Forward Voltage
Reverse Current
Terminal Capacitance
Transistor
Collector to Emitter Dark
Current
Coupled
Current Transfer Ratio
(I
C
/I
F
)
*1
Symbol
V
F
I
R
C
t
I
CEO
I
F
= 5 mA
V
R
= 5 V
Conditions
MIN.
TYP.
1.1
MAX.
1.4
5
Unit
V
µ
A
pF
V = 0 V, f = 1 MHz
I
F
= 0 mA, V
CE
= 40 V
15
100
nA
CTR
I
F
= 5 mA, V
CE
= 5 V
50
200
400
%
Collector Saturation
Voltage
Isolation Resistance
Isolation Capacitance
Rise Time
Fall Time
*2
V
CE (sat)
I
F
= 10 mA, I
C
= 2 mA
11
0.3
V
Ω
R
I-O
C
I-O
t
r
t
f
V
I-O
= 1 kV
DC
V = 0 V, f = 1 MHz
V
CC
= 5 V, I
C
= 2 mA, R
L
= 100
Ω
10
0.4
4
5
pF
µ
s
*2
*1
CTR rank
K: 200 to 400 (%)
L: 100 to 300 (%)
M: 50 to 150 (%)
N: 50 to 400 (%)
*2
Test circuit for switching time
Pulse Input
PW = 100
µ
s
Duty cycle = 1/10
I
F
V
CC
In monitor
50
Ω
R
L
= 100
Ω
V
OUT
4
Data Sheet PN10258EJ01V0DS
PS2861-1
TYPICAL CHARACTERISTICS (T
A
= 25
°C,
unless otherwise specified)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
210
180
150
120
90
60
30
0
25
50
75
100
100
Diode Power Dissipation P
D
(mW)
80
60
40
20
0
25
50
75
100
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
( ˚C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
35
30
I
F
= 25 mA
20 mA
15 mA
10
Collector Current I
C
(mA)
Forward Current I
F
(mA)
T
A
= +100 ˚C
+60 ˚C
+25 ˚C
25
20
15
10
5
5 mA
10 mA
1
0 ˚C
–25 ˚C
–50 ˚C
0.1
0.01
0.0
0.5
1.0
1.5
2.0
0
2
4
6
8
10
Forward Voltage V
F
(V)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
100
10 mA
5 mA
2 mA
10 000
1 000
V
CE
= 20 V
40 V
Collector Current I
C
(mA)
10
100
1
I
F
= 1mA
10
1
–25
0
25
50
75
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Ambient Temperature T
A
(˚C)
Collector Saturation Voltage V
CE(sat)
(V)
Data Sheet PN10258EJ01V0DS
5
Microchip MCU
