PTFA260851E
PTFA260851F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
85 W, 2500 – 2700 MHz
Description
The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs
designed for WiMAX power amplifier applications in the 2500 to
2700 MHz band. Features include input and output matching, and
thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA260851E
Package H-30248-2
PTFA260851F
Package H-31248-2
WiMAX
EVM and Efficiency vs. Output Power
V
DS
= 28 V, I
DQ
= 900 mA
25
20
Efficiency (%)
15
10
EVM
5
0
15
20
25
30
35
40
45
Output Power (dBm)
-40
-45
2.62
GHz
2.68
GHz
2.62
-20
-25
Efficiency
-30
-35
EVM (dBc)
Features
•
•
•
Thermally-enhanced, Pb-free and RoHS-compli-
ant packages
Broadband internal matching
Typical WiMAX performance at 2680 MHz, 28 V
- Average output power = 16 W
- Linear Gain = 14 dB
- Efficiency = 22%
- Error Vector Magnitude = –29 dB
Typical CW performance, 2680 MHz, 28 V
- Output power at P–1dB = 100 W
- Efficiency = 47%
Integrated ESD protection: Human Body Model,
Class
2
(minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
85 W (CW) output power
•
•
•
•
RF Characteristics
WiMAX Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 16 W average, ƒ = 2680 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz,
sample rate = 4 MHz
Characteristic
Gain
Drain Efficiency
Error Vector Magnitude
Symbol
G
ps
Min
—
—
—
Typ
14
22
–29
Max
—
—
—
Unit
dB
%
dB
η
D
EVM
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
*See Infineon distributor for future availability.
Rev. 02.1, 2009-02-20
PTFA260851E
PTFA260851F
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 85 W PEP, ƒ = 2680 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
46.5 dBm (PEP)
Symbol
G
ps
Min
13
33
—
Typ
14
36
–30
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.095
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 900 mA
V
GS
= 10 V, V
DS
= 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 85 W CW)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
437.5
2.5
–40 to +150
0.4
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA260851E
PTFA260851F
V1
V1
Package Type
H-30248-2
H-31248-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA260851E
PTFA260851F
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 02.1, 2009-02-20
PTFA260851E
PTFA260851F
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production test fixture)
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 900 mA, ƒ = 2.68 GHz
-20
Two–tone Broadband Performance
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 42.5 W
60
50
40
30
20
Intermodulation Distortion (dBc)
16
15
14
3rd Order
-30
Gain (dB)
Gain
Drain Efficiency (%)
13
12
11
10
25
30
35
40
45
50
55
-40
5th
Efficiency
-50
10
0
7th
-60
2580 2600 2620 2640
2660 2680 2700 2720
Output Power (dBm)
Frequency (MHz)
Two–tone Broadband Performance
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 42.5 W
20
50
45
35
30
25
-10
20
40
Two–tone Performance, various voltages
I
DQ
= 900 mA, ƒ = 2.68 GHz, tone spacing = 1 MHz
-20
-25
V
DD
= 26 V
V
DD
= 28 V
V
DD
= 32 V
Gain
Gain (dB), Return Loss (dB)
Drain Efficiency (%)
10
0
-30
Efficiency
IM3, 5, 7 (dBc)
-35
-40
-45
-50
-55
-60
-65
25
30
35
IM3
IM5
Input Return Loss
-20
-30
2590
15
10
5
0
2710
IM7
40
45
50
2610
2630
2650
2670
2690
Frequency (MHz)
Output Power (dBm )
Data Sheet
3 of 11
Rev. 02.1, 2009-02-20
PTFA260851E
PTFA260851F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
3-Carrier CDMA2000 Performance,
various voltages
I
DQ
= 900 mA, ƒ = 2.68 GHz, PAR = 7 dB
40
16
Two–tone Performance, various voltages
I
DQ
= 900 mA, ƒ = 2.68 GHz, tone spacing = 1 MHz
17
16
50
V
DD
= 26 V
V
DD
= 28 V
V
DD
= 32 V
Efficiency
40
30
Gain
20
10
0
25
30
35
40
45
50
Drain Efficiency (%)
30
V
DD
= 26 V
V
DD
= 28 V
V
DD
= 32 V
Efficiency
15
Gain (dB)
20
14
14
13
12
Gain
10
13
0
30
35
40
45
50
12
Output Power (dBm)
Output Power (dBm)
3-Carrier CDMA2000 Performance
Adjacent Channel Power Ratio
V
DD
= 28 V, I
DQ
= 900 mA, ƒ = 2.68 GHz, PAR = 7 dB
-30
-40
WCDMA 3GPP Single-carrier Performance,
various voltages
I
DQ
= 900 mA, ƒ = 2.68 GHz, PAR = 8 dB
40
V
DD
= 26 V
V
DD
= 28 V
V
DD
= 32 V
16
Drain Efficiency (%)
ACPR (dBc)
Alt
2
2.5 MHz
-50
-60
-70
30
15
Adj 35 MHz
20
Gain
14
10
Efficiency
13
Alt
1
2.5 MHz
-80
25
30
35
40
45
50
0
25
30
35
40
45
12
Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 11
Rev. 02.1, 2009-02-20
Gain (dB)
Gain (dB)
15
PTFA260851E
PTFA260851F
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
WCDMA 3GPP 2-carrier Performance,
various voltages
-30
WCDMA 3GPP Single-carrier Performance
I
DQ
= 900 mA, ƒ = 2.68 GHz, PAR = 8 dB
-30
I
DQ
= 900 mA, ƒ = 2.68 GHz, PAR = 8 dB,
10 MHz spacing
ACPR
IMD 3
32 V
Intermodulation Distortion (dBc)
-35
-40
-45
-50
ACPR (dBc), IM3U (dB)
-35
-40
-45
-50
32 V
28 V
26 V
-55
25
30
35
40
45
50
-55
25
26 V
30
35
28 V
40
45
Output Power (dBm)
Output Power (dBm)
WCDMA 3GPP 2-carrier Performance
V
DD
= 28 V & 32 V, I
DQ
= 900 mA, ƒ = 2.68 GHz,
PAR = 8 dB, 10 MHz spacing
40
16
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
0.19 A
0.56 A
0.93 A
1.39 A
2.78 A
4.17 A
5.56 A
6.95 A
8.34 A
V
DD
= 28 V
Drain Efficiency (%)
30
V
DD
= 32 V
Gain
Normalized Bias Voltage (V)
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0
20
40
60
80
100
15
20
14
10
Efficiency
13
0
25
30
35
40
45
12
Gain (dB)
Output Power (dBm)
Case Temperature (°C)
Data Sheet
5 of 11
Rev. 02.1, 2009-02-20
