JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89
PXT8050
TRANSISTOR (NPN)
Plastic-Encapsulate Transistors
SOT-89
FEATURES
Compliment to PXT8550
MARKING: Y1
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
Value
40
25
6
1.5
0.5
150
-55-150
Units
V
V
V
A
W
℃
℃
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Base-emitter positive favor voltage
Transition frequency
output capacitance
CLASSIFICATION OF h
FE(1)
Rank
Range
B
85-160
C
120-200
D
160-300
D3
300-400
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
V
BEF
f
T
C
ob
Test
conditions
MIN
40
25
5
0.1
0.1
0.1
85
40
0.5
1.2
1
1.55
100
15
V
V
V
V
MHz
pF
400
TYP
MAX
UNIT
V
V
V
μA
μA
μA
I
C
=100uA, I
E
=0
I
C
=0.1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=40V, I
E
=0
V
CE
=20V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=100mA
V
CE
=1V, I
C
=800mA
I
C
=800mA, I
B
=80mA
I
C
=800mA, I
B
=80mA
V
CE
=1V, I
C
=10mA
I
B
=1A
V
CE
=10V,I
C
=50mA,f=30MHz
V
CB
=10V,I
E
=0,f=1MHz
Typical Characteristics
PXT8050
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