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QEC121, QEC122, QEC123 — Plastic Infrared Light Emitting Diode
August 2008
QEC121, QEC122, QEC123
Plastic Infrared Light Emitting Diode
Features
PACKAGE DIMENSIONS
■
λ
= 880nm
■
Chip material = AlGaAs
■
Package type: T-1 (3mm)
■
Matched photosensor: QSC112/QSC113/QSC114
■
Narrow emission angle, 8° at 80% intensity
■
High output power
■
Package material and color: clear, purple tinted, plastic
Description
The QEC121, QEC122 and QEC123 are 880nm AlGaAs
LED encapsulated in a clear purple tinted, plastic T-1
package.
Package Dimensions
0.116 (2.95)
REFERENCE
SURFACE
0.052 (1.32)
0.032 (0.082)
0.193 (4.90)
0.030 (0.76)
NOM
0.800 (20.3)
MIN
CATHODE
0.050 (1.27)
0.100 (2.54)
NOM
Schematic
0.155 (3.94)
0.018 (0.46)
SQ. (2x)
ANODE
CATHODE
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.10 (0.25) on all non-nominal dimensions
unless otherwise specified.
©2001 Fairchild Semiconductor Corporation
QEC121, QEC122, QEC123 Rev. 1.0.1
www.fairchildsemi.com
QEC121, QEC122, QEC123 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
I
F
V
R
P
D
Operating Temperature
Storage Temperature
Parameter
Rating
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
50
5
100
Units
°C
°C
°C
°C
mA
V
mW
Soldering Temperature (Iron)
(2)(3)(4)
Soldering Temperature (Flow)
(2)(3)
Continuous Forward Current
Reverse Voltage
Power Dissipation
(1)
Notes:
1. Derate power dissipation linearly 1.33mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
(T
A
= 25°C)
Symbol
λ
PE
TC
λ
2Θ
1
/2
V
F
TC
VF
I
R
I
E
I
E
I
E
TC
IE
t
r
t
f
C
j
Parameter
Peak Emission Wavelength
Temperature Coefficient
Emission Angle
Forward Voltage
Temperature Coefficient
Reverse Current
Radiant Intensity QEC121
Radiant Intensity QEC122
Radiant Intensity QEC123
Temperature Coefficient
Rise Time
Fall Time
Junction Capacitance
Test Conditions
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA, tp = 20ms
Min.
Typ.
890
0.2
18
Max.
Units
nm
nm / °C
°
1.7
-6
10
14
27
39
45
-0.3
900
800
11
94
V
mV / °C
µA
mW/sr
mW/sr
mW/sr
% / °C
ns
ns
pF
V
R
= 5V
I
F
= 100mA, tp = 20ms
I
F
= 100mA, tp = 20ms
I
F
= 100mA, tp = 20ms
I
F
= 100mA
V
R
= 0V
©2001 Fairchild Semiconductor Corporation
QEC121, QEC122, QEC123 Rev. 1.0.1
www.fairchildsemi.com
2
QEC121, QEC122, QEC123 — Plastic Infrared Light Emitting Diode
Typical Performance Curves
Figure 1. Normalized Intensity vs. Wavelength
1.0
0.9
910
Figure 2. Peak Wavelength vs. Ambient Temperature
λ
PE
– PEAK EMISSION WAVELENGTH
I
F
= 20mA DC
908
906
904
902
900
898
896
894
NORMALIZED INTENSITY
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
700
750
800
850
900
950
1,000
1,050
0
10
20
30
40
50
60
70
80
90
100
λ
(nm)
T
A
– AMBIENT TEMPERTURE (°C)
Figure 3. Normalized Radiant Intensity vs. Forward Current
10
Figure 4. Normalized Radient Intensity vs. Ambient Temperature
1.3
I
e
– NORMALIZED RADIANT INTENSITY
I
e
– NORMALIZED RADIANT INTENSITY
Normalized to:
I
F
= 100mA Pulsed
t
PW
= 20mS
Duty Cycle = 4%
T
A
= 25°C
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-15
Normalized to:
I
F
= 20mA Pulsed
t
PW
= 20mS
Duty Cycle = 4%
T
A
= 25°C
1
0.1
10
100
1000
0
15
30
45
60
75
90
105
I
F
– FORWARD CURRENT (mA)
T
A
– AMBIENT TEMPERTURE (°C)
Figure 5. Forward Voltage vs. Forward Current
5.0
I
F
Pulsed
t
PW
= 20mS
Duty Cycle = 4%
T
A
= 25°C
2.1
Figure 6. Forward Voltage vs. Ambient Temperature
I
F
= 20mA Pulsed
t
PW
= 20mS
Duty Cycle = 4%
V
F
– FORWARD VOLTAGE (V)
4.0
V
F
– FORWARD VOLTAGE (V)
2.0
1.9
3.0
1.8
2.0
1.7
1.0
1.6
0.0
10
100
1000
1.5
-15
0
15
30
45
60
75
90
105
I
F
– FORWARD CURRENT (mA)
T
A
– AMBIENT TEMPERTURE (°C)
©2001 Fairchild Semiconductor Corporation
QEC121, QEC122, QEC123 Rev. 1.0.1
www.fairchildsemi.com
3
QEC121, QEC122, QEC123 — Plastic Infrared Light Emitting Diode
Typical Performance Curves
(Continued)
I
C
(ON) – NORMALIZED COLLECTOR CURRENT
Figure 7. Radiation Diagram
110°
120°
130°
140°
150°
160°
170°
180°
1.0
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
0°
1.0
Figure 8. Coupling Characteristics of QEC12X and QSC11X
1.0
Normalized to:
d = 0 inch
I
F
Pulsed
t
PW
= 100µs
Duty Cycle = 0.1%
V
CC
= 5V
R
L
= 100Ω
T
A
= 25°C
0.8
0.6
0.4
I
F
= 100mA
0.2
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
I
F
= 20mA
0.0
0
1
2
3
4
5
6
7
8
LENS TIP SEPARATION (inches)
©2001 Fairchild Semiconductor Corporation
QEC121, QEC122, QEC123 Rev. 1.0.1
www.fairchildsemi.com
4
