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QSE114

Phototransistors 1mA PHOTO TRANS

器件类别：光电子/LED    光电   

厂商名称：ON Semiconductor(安森美)

厂商官网：http://www.onsemi.cn

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器件参数
参数名称
属性值
Brand Name
ON Semiconductor
是否无铅
不含铅
厂商名称
ON Semiconductor(安森美)
包装说明
PLASTIC PACKAGE-2
制造商包装代码
100CN
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
4 weeks
其他特性
HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER
Coll-Emtr Bkdn Voltage-Min
30 V
配置
SINGLE
最大暗电源
100 nA
红外线范围
YES
JESD-609代码
e3
标称光电流
1 mA
安装特点
THROUGH HOLE MOUNT
功能数量
1
最高工作温度
100 °C
最低工作温度
-40 °C
光电设备类型
PHOTO TRANSISTOR
峰值波长
880 nm
最大功率耗散
0.1 W
最长响应时间
0.000008 s
形状
ROUND
尺寸
1.65 mm
表面贴装
NO
端子面层
Tin (Sn)
文档预览
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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QSE113 / QSE114 — Plastic Silicon Infrared Phototransistor
May 2015
QSE113 / QSE114
Plastic Silicon Infrared Phototransistor
Features
•
•
•
•
•
•
•
•
NPN Silicon Phototransistor
Package Type: Sidelooker
Medium Wide Reception Angle, 50°
Package Material and Color: Black Epoxy
Matched Emitter: QEE113
Daylight Filter
High Sensitivity
Blue dot marking on the top side
Description
The QSE113/114 is a silicon phototransistor encapsu-
lated in a wide angle, infrared transparent, black plastic
sidelooker package.
Package Dimensions
(1, 2)
0.175 (4.44)
0.087 (2.22)
Ø 0.065 (1.65)
0.050 (1.27)
0.200 (5.08)
Ø 0.095 (2.41)
0.500 (12.70)
MIN
EMITTER
COLLECTOR
Schematic
0.020 (0.51) SQ.
(2X)
Collector
0.100 (2.54)
0.030 (0.76)
0.100 (2.54)
NOM
Emitter
Notes:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified.
© 2002 Fairchild Semiconductor Corporation
QSE113 / QSE114 Rev. 2.1
www.fairchildsemi.com
1
QSE113 / QSE114 — Plastic Silicon Infrared Phototransistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
CE
V
EC
P
D
Operating Temperature
Storage Temperature
Parameter
Value
-40 to +100
-40 to +100
240 for 5 sec
260 for 10 sec
30
5
100
Unit
°C
°C
°C
°C
V
V
mW
Soldering Temperature (Iron)
(4, 5, 6)
Soldering Temperature (Flow)
(4, 5)
Collector Emitter Voltage
Emitter Collector Voltage
Power Dissipation
(3)
Notes:
3. Derate power dissipation linearly 1.33 mW/°C above 25°C.
4. RMA flux is recommended.
5. Methanol or isopropyl alcohols are recommended as cleaning agents.
6.
Soldering iron 1/16" (1.6mm) minimum from housing.
Electrical / Optical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
λ
PS
Θ
l
CEO
BV
CEO
BV
ECO
Parameter
Peak Sensitivity
Reception Angle
Collector Emitter Dark Current
Collector-Emitter Breakdown
Emitter-Collector Breakdown
On-State Collector Current
(7)
QSE113
On-State Collector Current
(7)
QSE114
Saturation Voltage
(7)
Rise Time
Fall Time
Conditions
Min.
Typ.
880
±25
Max.
Unit
nm
°
V
CE
= 10 V, E
e
= 0
I
C
= 1 mA
I
E
= 100
μA
2
100
30
5
0.25
1.50
nA
V
V
I
C(ON)
E
e
= 0.5 mW/cm , V
CE
= 5 V
1.00
E
e
= 0.5 mW/cm
2
, I
C
= 0.1 mA
I
C
= 1 mA, V
CC
= 5 V,
R
L
= 100
Ω
8
8
0.4
mA
V
CE(SAT)
t
r
t
f
V
μs
μs
Note:
7.
λ
= 880 nm (AlGaAs)
© 2002 Fairchild Semiconductor Corporation
QSE113 / QSE114 Rev. 2.1
www.fairchildsemi.com
2
QSE113 / QSE114 — Plastic Silicon Infrared Phototransistor
Typical Performance Characteristics
10
1
V
CE
= 5V
GaAs Light Source
I
C(ON)
- Light Current (mA)
110
120
130
140
10
0
100
90
80
70
60
50
40
30
20
10
0
1.0
150
160
170
10
-1
0.1
1
180
1.0
0.8
0.6
0.4
0.2
0.0
0.2
0.4
0.6
0.8
E
e
- Radiant Intensity (mW/cm )
2
Figure 1. Light Current vs. Radiant Intensity
Figure 2. Angular Response Curve
10
1
10
1
Ie = 1mW/cm
2
I
CEO
- Dark Current (nA)
10
0
I
L
- Normalized Light Current
10
0
Ie = 0.5mW/cm
2
Ie = 0.2mW/cm
2
Ie = 0.1mW/cm
2
10
-1
10
-1
Normalized to:
V
CE
= 5V
Ie = 0.5mW/cm
2
T
A
= 25°C
10
-2
0.1
10
-2
10
-3
0
5
10
15
20
25
30
1
10
V
CE
- Collector-Emitter Voltage (V)
V
CE
- Collector-Emitter Voltage (V)
Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage
10
4
Normalized to:
V
CE
= 25V
I
CEO
- Normalized Dark Current
10
3
T
A
= 25°C
V
CE
= 25V
V
CE
= 10V
10
2
10
1
10
0
10
-1
25
50
75
100
T
A
- Ambient Temperature (
°C)
Figure 5. Dark Current vs. Ambient Temperature
© 2002 Fairchild Semiconductor Corporation
QSE113 / QSE114 Rev. 2.1
www.fairchildsemi.com
3
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower
AttitudeEngine™
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*
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Build it Now
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CorePOWER
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Current Transfer Logic
DEUXPEED
®
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EcoSPARK
®
EfficientMax
ESBC
®
Fairchild
®
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FACT Quiet Series
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Global Power Resource
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Making Small Speakers Sound Louder
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MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
MotionGrid
®
MTi
®
MTx
®
MVN
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mWSaver
®
OptoHiT
OPTOLOGIC
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OPTOPLANAR
®
®
®*
Power Supply WebDesigner
PowerTrench
®
PowerXS™
Programmable Active Droop
QFET
®
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
Solutions for Your Success
SPM
®
STEALTH
SuperFET
®
SuperSOT -3
SuperSOT -6
SuperSOT -8
SupreMOS
®
SyncFET
Sync-Lock™
TinyBoost
®
TinyBuck
®
TinyCalc
TinyLogic
®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TranSiC
TriFault Detect
TRUECURRENT
®
*
μSerDes
UHC
®
Ultra FRFET
UniFET
VCX
VisualMax
VoltagePlus
XS™
Xsens™
™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. T
O OBTAIN THE LATEST, MOST UP-TO-DATE DATASHEET AND PRODUCT INFORMATION, VISIT OUR WEBSITE
AT
HTTP://WWW.FAIRCHILDSEMI.COM.
FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain
system whose failure to perform can be reasonably expected to
life, and (c) whose failure to perform when properly used in
cause the failure of the life support device or system, or to affect its
accordance with instructions for use provided in the labeling, can be
safety or effectiveness.
reasonably expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
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applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative / In Design
First Production
Full Production
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I74
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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参数对比
与QSE114相近的元器件有：QSE114E3R0、QSE113、QSE113E3R0。描述及对比如下：
型号 QSE114 QSE114E3R0 QSE113 QSE113E3R0
描述 Phototransistors 1mA PHOTO TRANS PHOTOTRANSISTOR IR 30V SIDELOOKR IC PHOTOTRANS IR 880NM SIDE-LOOK PHOTOTRANSISTOR IR 30V SIDELOOK
Brand Name ON Semiconductor - ON Semiconductor ON Semiconductor
是否无铅 不含铅 - 不含铅 不含铅
厂商名称 ON Semiconductor(安森美) - ON Semiconductor(安森美) ON Semiconductor(安森美)
包装说明 PLASTIC PACKAGE-2 - PLASTIC PACKAGE-2 LEAD FREE, PLASTIC PACKAGE-2
制造商包装代码 100CN - 100CN 100CN
Reach Compliance Code compliant - compliant compliant
ECCN代码 EAR99 - EAR99 EAR99
Factory Lead Time 4 weeks - 4 weeks 1 week
其他特性 HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER - HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER
Coll-Emtr Bkdn Voltage-Min 30 V - 30 V 30 V
配置 SINGLE - SINGLE SINGLE
最大暗电源 100 nA - 100 nA 100 nA
红外线范围 YES - YES YES
JESD-609代码 e3 - e3 e3
标称光电流 1 mA - 0.25 mA 0.25 mA
安装特点 THROUGH HOLE MOUNT - THROUGH HOLE MOUNT THROUGH HOLE MOUNT
功能数量 1 - 1 1
最高工作温度 100 °C - 100 °C 100 °C
最低工作温度 -40 °C - -40 °C -40 °C
光电设备类型 PHOTO TRANSISTOR - PHOTO TRANSISTOR PHOTO TRANSISTOR
峰值波长 880 nm - 880 nm 880 nm
最大功率耗散 0.1 W - 0.1 W 0.1 W
最长响应时间 0.000008 s - 0.000008 s 0.000008 s
形状 ROUND - ROUND ROUND
尺寸 1.65 mm - 1.65 mm 1.65 mm
表面贴装 NO - NO NO
端子面层 Tin (Sn) - Tin (Sn) Tin (Sn)
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器件捷径:
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