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R-11-040-G-B-C

PIN Photodiode, HERMETIC SEALED, TO-46, 3 PIN

器件类别:光电子/LED    光电   

厂商名称:Source Photonics

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器件参数
参数名称
属性值
包装说明
HERMETIC SEALED, TO-46, 3 PIN
Reach Compliance Code
unknown
配置
SINGLE
最大暗电源
0.8 nA
红外线范围
YES
功能数量
1
最高工作温度
85 °C
最低工作温度
-40 °C
光电设备类型
PIN PHOTODIODE
最小反向击穿电压
20 V
形状
ROUND
尺寸
1.5 mm
Base Number Matches
1
文档预览
InGaAs PIN Photodiode
R-11-XXX-G-B(B)-C
Features
• InGaAs/InP PIN Photodiode
• High Responsivity @1310 nm and 1550 nm
• Low dark current
• Fast pulse response
• -40 to 85ºC operating temperature
• Hermetically sealed 3-pin metal case
• Active diameter is 40, 55, 75,100 or 300 µm
• TO-46 package wih intergrated coated ball lens cap
• Connectorized receptacle module application
• Coaxial pigtail module application
• Data and Telecommunication application
Absolute Maximum Rating (Tc=25ºC)
Parameter
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Symbol
V
R
I
F
I
R
T
opr
T
stg
Min
-
-
-
-40
-40
Max
20
2
1
+85
+85
Unit
V
mA
mA
ºC
ºC
R-11-040-G-B(B)-C
Optical and Electrical Characteristics( Tc=25ºC )
Parameter
Active area(Dia)
Detection Range
Responsivity
Dark Current
Capacitance
Bandwidth
Symbol
-
-
R
I
dark
C
BW
Min
-
1100
0.75
-
-
4
Typical
40
1310
0.8
-
0.7
-
Max
-
1650
-
0.8
-
-
Unit
µm
nm
A/W
nA
pF
GHz
Test condition
-
-
V
R
= 5V,
λ=1310
nm
V
R
= 5V
V
R
= 5V
V
R
= 5V
R-11-055-G-B(B)-C
Optical and Electrical Characteristics( Tc=25ºC )
Parameter
Active area(Dia)
Detection Range
Responsivity
Dark Current
Capacitance
Bandwidth
Symbol
-
-
R
I
dark
C
BW
Min
-
1100
0.75
-
-
3
Typical
55
1310
0.8
-
0.8
-
Max
-
1650
-
0.8
-
-
Unit
µm
nm
A/W
nA
pF
GHz
Test condition
-
-
V
R
= 5V,
λ=1310
nm
V
R
= 5V
V
R
= 5V
V
R
= 5V
LUMINENTOIC.COM
20550 Nordhoff St. • Chatsworth, CA 91311 • tel: 818.773.9044 • fax: 818.576.9486
9F, No 81, Shui Lee Rd. • Hsinchu, Taiwan, R.O.C. • tel: 886.3.5169222 • fax: 886.3.5169213
1
LUMNDS792-OCT1504
rev. A.0
InGaAs PIN Photodiode
R-11-XXX-G-B(B)-C
R-11-075-G-B(B)-C
Optical and Electrical Characteristics( Tc=25ºC )
Parameter
Active area(Dia)
Detection Range
Responsivity
Dark Current
Capacitance
Bandwidth
Symbol
-
-
R
I
dark
C
BW
Min
-
1100
0.8
-
-
2
Typical
75
1310
0.85
-
1.2
-
Max
-
1650
-
0.8
-
-
Unit
µm
nm
A/W
nA
pF
GHz
Test condition
-
-
V
R
= 5V,
λ=1310
nm
V
R
= 5V
V
R
= 5V
V
R
= 5V
R-11-100-G-B(B)-C
Optical and Electrical Characteristics( Tc=25ºC )
Parameter
Active area (Dia)
Detection Range
Responsivity
Dark Current
Capacitance
Bandwidth
Symbol
-
-
R
I
dark
C
BW
Min
-
1100
0.8
-
-
1.5
Typical
100
1310
0.85
-
2.5
-
Max
-
1650
-
2
-
-
Unit
µm
nm
A/W
nA
pF
GHz
Test condition
-
-
V
R
= 5V,
λ=1310
nm
V
R
= 5V
V
R
= 5V
V
R
= 5V
R-11-300-G-B(B)-C
Optical and Electrical Characteristics( Tc=25ºC )
Parameter
Active area (Dia)
Detection Range
Responsivity
Dark Current
Capacitance
Bandwidth
Symbol
-
-
R
I
dark
C
BW
Min
-
1100
0.8
-
-
0.5
Typical
300
1310
0.85
-
6
-
Max
-
1650
-
5
-
-
Unit
µm
nm
A/W
nA
pF
GHz
Test condition
-
-
V
R
= 5V,
λ=1310
nm
V
R
= 5V
V
R
= 5V
V
R
= 5V
LUMINENTOIC.COM
20550 Nordhoff St. • Chatsworth, CA 91311 • tel: 818.773.9044 • fax: 818.576.9486
9F, No 81, Shui Lee Rd. • Hsinchu, Taiwan, R.O.C. • tel: 886.3.5169222 • fax: 886.3.5169213
2
LUMNDS792-OCT1504
rev. A.0
InGaAs PIN Photodiode
R-11-XXX-G-B(B)-C
Package Diagram
Diagram 1 is for R-11-XXX-G-B-C
Diagram 1
Focal plane
5.65
Basic plane
CASE GND
BOTTOM VIEW
TO-46 Package with Coated Ball Lens Cap
All Dimensions in mm
LUMINENTOIC.COM
20550 Nordhoff St. • Chatsworth, CA 91311 • tel: 818.773.9044 • fax: 818.576.9486
9F, No 81, Shui Lee Rd. • Hsinchu, Taiwan, R.O.C. • tel: 886.3.5169222 • fax: 886.3.5169213
3
LUMNDS792-OCT1504
rev. A.0
InGaAs PIN Photodiode
R-11-XXX-G-B(B)-C
Package Diagram
Diagram 2 is for R-11-XXX-G-BB-C
Diagram 3 is the functional schematic for R-11-XXX-G-B(B)-C
Diagram 2
Focal plane
5.65
Basic plane
CASE GND
BOTTOM VIEW
TO-46 Package with Coated Ball Lens Cap
All Dimensions in mm
Diagram 3
LUMINENTOIC.COM
20550 Nordhoff St. • Chatsworth, CA 91311 • tel: 818.773.9044 • fax: 818.576.9486
9F, No 81, Shui Lee Rd. • Hsinchu, Taiwan, R.O.C. • tel: 886.3.5169222 • fax: 886.3.5169213
4
LUMNDS792-OCT1504
rev. A.0
InGaAs PIN Photodiode
R-11-XXX-G-B(B)-C
Ordering Information
Available Options:
R-11-040-G-B-C
R-11-055-G-B-C
R-11-075-G-B-C
R-11-100-G-B-C
R-11-300-G-B-C
R-11-040-G-BB-C
R-11-055-G-BB-C
R-11-075-G-BB-C
R-11-100-G-BB-C
R-11-300-G-BB-C
R-11-XXX-G-B(B)-C
Active region size
040 : 40½m
055 : 55½m
075 : 75½m
100 : 100½m
300 : 300½m
B- = Coated ball lens cap with A-type pin assignment
BB= Coated ball lens cap with B-type pin assignment
½
-
½=
No symbol
Warnings
Handling Precautions:
This device is susceptible to damage as a result of electrostatic discharge (ESD). A static free environment is highly recommended. Follow
guidelines according to proper ESD procedures.
Laser Safety:
Radiation emitted by laser devices can be dangerous to human eyes. Avoid eye exposure to direct or indirect radiation.
Legal Notice
IMPORTANT NOTICE!
All information contained in this document is subject to change without notice, at LuminentOIC’s sole and absolute discretion. LuminentOIC warrants performance
of its products to current specifications only in accordance with the company’s standard one-year warranty; however, specifications designated as “preliminary” are
given to describe components only, and LuminentOIC expressly disclaims any and all warranties for said products, including express, implied, and statutory warran-
ties, warranties of merchantability, fitness for a particular purpose, and non-infringement of proprietary rights. Please refer to the company’s Terms and Conditions of
Sale for further warranty information.
LuminentOIC assumes no liability for applications assistance, customer product design, software performance, or infringement of patents, services, or intellectual
property described herein. No license, either express or implied, is granted under any patent right, copyright, or intellectual property right, and LuminentOIC makes
no representations or warranties that the product(s) described herein are free from patent, copyright, or intellectual property rights. Products described in this docu-
ment are NOT intended for use in implantation or other life support applications where malfunction may result in injury or death to persons. LuminentOIC customers
using or selling products for use in such applications do so at their own risk and agree to fully defend and indemnify LuminentOIC for any damages resulting from
such use or sale.
THE INFORMATION CONTAINED IN THIS DOCUMENT IS PROVIDED ON AN “AS IS” BASIS. Customer agrees that LuminentOIC is not liable for any
actual, consequential, exemplary, or other damages arising directly or indirectly from any use of the information contained in this document. Customer must contact
LuminentOIC to obtain the latest version of this publication to verify, before placing any order, that the information contained herein is current.
© LuminentOIC, Inc. 2003
All rights reserved
LUMINENTOIC.COM
20550 Nordhoff St. • Chatsworth, CA 91311 • tel: 818.773.9044 • fax: 818.576.9486
9F, No 81, Shui Lee Rd. • Hsinchu, Taiwan, R.O.C. • tel: 886.3.5169222 • fax: 886.3.5169213
5
LUMNDS792-OCT1504
rev. A.0
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参数对比
与R-11-040-G-B-C相近的元器件有:R-11-040-G-BB-C、R-11-055-G-BB-C、R-11-100-G-BB-C、R-11-075-G-BB-C、R-11-075-G-B-C。描述及对比如下:
型号 R-11-040-G-B-C R-11-040-G-BB-C R-11-055-G-BB-C R-11-100-G-BB-C R-11-075-G-BB-C R-11-075-G-B-C
描述 PIN Photodiode, HERMETIC SEALED, TO-46, 3 PIN PIN Photodiode, HERMETIC SEALED, TO-46, 3 PIN PIN Photodiode, HERMETIC SEALED, TO-46, 3 PIN PIN Photodiode, HERMETIC SEALED, TO-46, 3 PIN PIN Photodiode, HERMETIC SEALED, TO-46, 3 PIN PIN Photodiode, HERMETIC SEALED, TO-46, 3 PIN
包装说明 HERMETIC SEALED, TO-46, 3 PIN HERMETIC SEALED, TO-46, 3 PIN HERMETIC SEALED, TO-46, 3 PIN HERMETIC SEALED, TO-46, 3 PIN HERMETIC SEALED, TO-46, 3 PIN HERMETIC SEALED, TO-46, 3 PIN
Reach Compliance Code unknown unknown unknown unknown unknown unknown
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
最大暗电源 0.8 nA 0.8 nA 0.8 nA 2 nA 0.8 nA 0.8 nA
红外线范围 YES YES YES YES YES YES
功能数量 1 1 1 1 1 1
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
光电设备类型 PIN PHOTODIODE PIN PHOTODIODE PIN PHOTODIODE PIN PHOTODIODE PIN PHOTODIODE PIN PHOTODIODE
最小反向击穿电压 20 V 20 V 20 V 20 V 20 V 20 V
形状 ROUND ROUND ROUND ROUND ROUND ROUND
尺寸 1.5 mm 1.5 mm 1.5 mm 1.5 mm 1.5 mm 1.5 mm
Base Number Matches 1 1 1 1 - -
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