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R1200F

0.5 A, 1200 V, SILICON, SIGNAL DIODE, DO-41

器件类别:半导体    分立半导体   

厂商名称:MIC

厂商官网:http://www.cnmic.com/

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R1200F
THRU
HIGH VOLTAGE SILICON RECTIFIER
VOLTAGE RANGE
1200
to
5000
Volts
R5000F
CURRENT
0.2 - 0.5
Amperes
FEATURES
Fast
switching
Low
leakage
High
surge capability

High current capability
High
temperature soldering guaranteed:
260/10 seconds. 0.375" (9.5mm) lead length
at 5lbs. (2.3kg) tension.
MECHANICAL DATA
Case:
Transfer molded plastic
Epoxy:
UL94V - 0 rate flame retardant
Polarity:
Color band denotes cathode end.
Lead:
Plated slug, solderable per MIL - STD 202 E
method 208C
Mounting
position: Any
Weight:
0.012 ounce, 0.33grams (DO-41)
0.014 ounce, 0.39 grams (DO-15)
(R1200F - R200
(R2500F - R5000F)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings
at 25 ambient temperature unless otherwise specified
Single
phase, half wave, 60Hz, resistive or inductive load.
For
capacitive load derate current by 20%
SYMBOLS R1200FR1500FR1800FR2000FR2500FR3000FR4000FR5000FUNIT
V
RRM
1200
      
Volts
V
RMS
840
         
Volts
V
DC
1200
      
Volts
I
(AV)
500

30










A
I
R(AV)
t
rr
T
J
, T
STG


(-65 to +150)
nS







mA
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current,
0.375" (9.5mm) Lead length at T
A
= 50
Peak Forward Surge Current
8.3ms single half sine - wave superimposed on
rated load (JEDEC method )
Maximum Instantaneous Forward
Voltage Drop at 0.5A / 0.2A
Maximum DC Reverse Current at rated
DC blocking voltage TA = 25
Maximum Full Load Reverse Current, full cycle
average 0.375" (9.5mm) lead length
at T
A
= 55
Maximum Reverse Recovery Time (Note 1)`
Operating and Storage Temperature Range
NOTES:
1. Test condition : I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A
I
FSM
V
F
I
R
Amps
Volts
MIC INVESTMENTS (CHINA) COMPANY LIMITED
RATINGS AND CHARACTERISTIC CURVES R1200F THRU R5000F
FIG.1-TYPICAL FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT,
Single Phase
Half Wave 60Hz
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
500
Resistive or
Inductive Load 0.375"(9.5mm)
PEAK FORWARD SURGE
30
(JEDEC Method)
8.3ms Single Half Sine-Wave
T
=T
j
j max
CURRENT, (A)
(mA)
Lead Length
20
R1
2
00
F-
R
200
20
00
R25
F
00F
-R5
000
F
10
1 Cycle
0
0
25
50
75
100
125
150
175
0
1
2
4
6
8
10
20
40
60
100
AMBIENT TEMPERATURE, ( ° C)
NUMBER OF CYCLES AT 60 Hz
FIG.3-TYPICAL REVERSE
CHARACTERISTICS
10
INSTANTANEOUS REVERSE CURRENT,
FIG.4-TEST CIRCUIT DIAGRAM AND
REVERSE RECOVERY TIME CHARACTERISTIC
1.0
50
NONINDUCTIVE
10
NONINDUCTIVE
(-)
(+)
25 Vdc
(approx.)
(-)
D.U.T.
PULSE
GENERATIOR
(NOTE 2)
(+)
OSCILLOSCOPE
(NOTE 1)
Trr
+0.5A
(A)
0
-0.25A
0.1
T
j
=25 ° C
1
NON
INDUCTIVE
-1.0A
1cm
0.01
0
40
80
120
NOTES: 1.Rise Time =7ns max. Input Impedance=
1 megohm. 22pF
2.Rise time=10ns max. Source Impedance=
50 ohms
SET TIME BASE FOR
50/100ns/cm
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
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参数对比
与R1200F相近的元器件有:R1500F、R1800F、R2000F、R2500F、R3000F、R4000F、R5000F。描述及对比如下:
型号 R1200F R1500F R1800F R2000F R2500F R3000F R4000F R5000F
描述 0.5 A, 1200 V, SILICON, SIGNAL DIODE, DO-41 0.5 A, SILICON, SIGNAL DIODE, DO-41 0.5 A, 1800 V, SILICON, SIGNAL DIODE, DO-41 0.5 A, 2000 V, SILICON, SIGNAL DIODE, DO-41 0.2 A, 2500 V, SILICON, SIGNAL DIODE, DO-41 0.3 A, SILICON, SIGNAL DIODE, DO-41 0.2 A, 4000 V, SILICON, SIGNAL DIODE, DO-41 0.2 A, 5000 V, SILICON, SIGNAL DIODE, DO-41
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