R1RW0408D Series
4M High Speed SRAM (512-kword
×
8-bit)
REJ03C0111-0100Z
Rev. 1.00
Mar.12.2004
Description
The R1RW0408D is a 4-Mbit high speed static RAM organized 512-kword
×
8-bit. It has realized high
speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit
designing technology. It is most appropriate for the application which requires high speed, high density
memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0408D
is packaged in 400-mil 36-pin SOJ for high density surface mounting.
Features
•
Single supply: 3.3 V
±
0.3 V
•
Access time: 12 ns (max)
•
Completely static memory
No clock or timing strobe required
•
Equal access and cycle times
•
Directly TTL compatible
All inputs and outputs
•
Operating current: 100 mA (max)
•
TTL standby current: 40 mA (max)
•
CMOS standby current : 5 mA (max)
: 0.8 mA (max) (L-version)
•
Data retention current: 0.4 mA (max) (L-version)
•
Data retention voltage: 2 V (min) (L-version)
•
Center V
CC
and V
SS
type pin out
Rev.1.00, Mar.12.2004, page 1 of 12
R1RW0408D Series
Ordering Information
Type No.
R1RW0408DGE-2PR
R1RW0408DGE-2LR
Access time
12 ns
12 ns
Package
400-mil 36-pin plastic SOJ (36P0K)
Pin Arrangement
36-pin SOJ
A0
A1
A2
A3
A4
CS#
I/O1
I/O2
V
CC
V
SS
I/O3
I/O4
WE#
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
(Top View)
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
NC
A18
A17
A16
A15
OE#
I/O8
I/O7
V
SS
V
CC
I/O6
I/O5
A14
A13
A12
A11
A10
NC
Rev.1.00, Mar.12.2004, page 2 of 12
R1RW0408D Series
Pin Description
Pin name
A0 to A18
I/O1 to I/O8
CS#
OE#
WE#
V
CC
V
SS
NC
Function
Address input
Data input/output
Chip select
Output enable
Write enable
Power supply
Ground
No connection
Rev.1.00, Mar.12.2004, page 3 of 12
R1RW0408D Series
Block Diagram
(LSB)
A14
A13
A12
A5
A6
A7
A11
A10
A3
A1
(MSB)
I/O1
.
.
.
I/O8
V
CC
Row
decoder
1024-row
×
32-column
×
16-block
×
8-bit
(4,194,304 bits)
V
SS
CS
Column I/O
Input
data
control
Column decoder
CS
WE#
CS#
A8 A9 A18 A16 A17 A0 A2 A4 A15
(LSB)
(MSB)
OE#
CS
Rev.1.00, Mar.12.2004, page 4 of 12
R1RW0408D Series
Operation Table
CS#
H
L
L
L
L
OE#
×
H
L
H
L
WE#
×
H
H
L
L
Mode
Standby
Output disable
Read
Write
Write
V
CC
current
I
SB
, I
SB1
I
CC
I
CC
I
CC
I
CC
I/O
High-Z
High-Z
D
OUT
D
IN
D
IN
Ref. cycle
Read cycle (1) to (3)
Write cycle (1)
Write cycle (2)
Note: H: V
IH
, L: V
IL
,
×:
V
IH
or V
IL
Absolute Maximum Ratings
Parameter
Supply voltage relative to V
SS
Voltage on any pin relative to V
SS
Power dissipation
Operating temperature
Storage temperature
Storage temperature under bias
Symbol
V
CC
V
T
P
T
Topr
Tstg
Tbias
Value
−0.5
to +4.6
−0.5*
to V
CC
+ 0.5*
1
2
Unit
V
V
W
°C
°C
°C
1.0
0 to +70
−55
to +125
−10
to +85
Notes: 1. V
T
(min) =
−2.0
V for pulse width (under shoot)
≤
6 ns.
2. V
T
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
≤
6 ns.
Recommended DC Operating Conditions
(Ta = 0 to +70°C)
Parameter
Supply voltage
Symbol
V
CC
*
V
SS
*
Input voltage
Notes: 1.
2.
3.
4.
V
IH
V
IL
3
4
Min
3.0
0
2.0
−0.5*
1
Typ
3.3
0
Max
3.6
0
V
CC
+ 0.5*
0.8
2
Unit
V
V
V
V
V
IL
(min) =
−2.0
V for pulse width (under shoot)
≤
6 ns.
V
IH
(max) = V
CC
+ 2.0 V for pulse width (over shoot)
≤
6 ns.
The supply voltage with all V
CC
pins must be on the same level.
The supply voltage with all V
SS
pins must be on the same level.
Rev.1.00, Mar.12.2004, page 5 of 12
