CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V (Figure 11)
V
GS
= V
DS
, I
D
= 250µA (Figure 10)
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V (125
o
C)
V
GS
=
±20V
I
D
= 45A, V
GS
= 10V (Figure 9)
V
DD
= 30V, I
D
= 45A
R
L
= 0.667Ω, V
GS
= +10V
R
G
= 3.6Ω (Figure 13)
MIN
60
2
-
-
-
-
-
-
-
-
-
-
V
GS
= 0 to 20V
V
GS
= 0 to 10V
V
GS
= 0 to 2V
V
DD
= 48V, I
D
= 45A,
R
L
= 1.07Ω
I
g(REF)
= 1.5mA
(Figure 13)
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
12
74
37
16
-
125
67
3.7
2050
600
200
-
-
MAX
-
4
1
25
±100
0.028
120
-
-
-
-
80
150
80
4.5
-
-
-
1.14
80
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(10)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
V
DS
= 25V, V
GS
= 0V
f = 1MHz (Figure 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Diode Reverse Recovery Time
NOTES:
2. Pulse test: pulse width
≤
300µs, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 45A
I
SD
= 45A, dI
SD
/dt = 100A/µs
MIN
-
-
TYP
-
-
MAX
1.5
125
UNITS
V
ns
4-456
RFG45N06, RFP45N06, RF1S45N06SM
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
I
D
, DRAIN CURRENT (A)
Unless Otherwise Specified
50
40
30
20
10
0
25
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
Z
θ
JC
, NORMALIZED TRANSIENT
THERMAL IMPEDANCE
1
0.5
P
DM
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
10
0
10
1
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
400
T
J
= MAX RATED
SINGLE PULSE
T
C
= 25
o
C
I
DM
, PEAK CURRENT (A)
10
3
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
175
–
T C
I = I 25
-----------------------
-
150
I
D
, DRAIN CURRENT (A)
100
100µs
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS(MAX)
= 60V
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
DC
100
V
GS
= 20V
V
GS
= 10V
10
2
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
40
10
-3
10
-2
10
-1
10
0
10
1
10
2
t, PULSE WIDTH (ms)
10
3
10
4
T
C
= 25
o
C
1
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
4-457
RFG45N06, RFP45N06, RF1S45N06SM
Typical Performance Curves
300
I
AS,
AVALANCHE CURRENT (A)
Unless Otherwise Specified
(Continued)
125
V
GS
= 10V
I
D
, DRAIN CURRENT (A)
V
GS
= 8V
V
GS
= 7V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 6V
V
GS
= 5V
V
GS
= 4.5V
10
0
0
1.5
3
4.5
6
7.5
100
100
STARTING T
J
= 25
o
C
75
10
STARTING T
J
= 150
o
C
If R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
50
25
1
0.01
If R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0.1
1
t
AV,
TIME IN AVALANCHE (ms)
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
I
DS(ON)
, DRAIN TO SOURCE CURRENT (A)
125
100
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
-55
o
C
25
o
C
2.5
175
o
C
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
GS
= 10V, I
D
= 45A
75
1.5
50
1
25
0.5
0
0
1
2
3
4
5
6
7
8
9
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
-80
-40
0
40
80
120
160
200
T
J,
JUNCTION TEMPERATURE (
o
C)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2.0
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED DRAIN TO SOURCE
2.0
I
D
= 250µA
BREAKDOWN VOLTAGE
NORMALIZED GATE
THRESHOLD VOLTAGE
1.5
1.5
1.0
1.0
0.5
0.5
0
-80
-40
0
40
80
120
160
200
0
-80
-40
0
40
80
120
160
200
T
J,
JUNCTION TEMPERATURE (
o
C)
T
J,
JUNCTION TEMPERATURE (
o
C)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4-458
RFG45N06, RFP45N06, RF1S45N06SM
Typical Performance Curves
4000
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
C
ISS
2000
C
OSS
1000
C
RSS
0
0
5
10
15
20
25
Unless Otherwise Specified
(Continued)
60
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
V
DD
= BV
DSS
45
V
DD
= BV
DSS
7.5
10
V
GS,
GATE TO SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
3000
30
0.75 BV
DSS
0.75 BV
DSS
0.50 BV
DSS
0.50 BV
DSS
0.25 BV
DSS
0.25 BV
DSS
R
L
= 1.33Ω
I
G(REF)
= 1.5mA
V
GS
= 10V
0
20
5.0
15
2.5
0
I
G(REF)
I
G(ACT)
t, TIME (µs)
80
I
G(REF)
I
G(ACT)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
DSP 与 ARM 处理器
