首页 > 器件类别 >

RF3807PCK-411

GaAs HBT PRE-DRIVER AMPLIFIER

厂商名称:RF Micro Devices (Qorvo)

下载文档
文档预览
RF3807GaAs
HBT Pre-Driver
Amplifier
RF3807
GaAs HBT PRE-DRIVER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: SOIC-8
Features
Output Power>0.5W P1dB
High Linearity
High Power-Added Efficiency
Thermally-Enhanced Packaging
Broadband Platform Design
Approach, 450MHz to 2700MHz
RFIN
NC
VREF
1
2
3
4
Bias
Circuit
8
VBIAS
7
RFOUT/VCC
6
RFOUT/VCC
5
NC
Applications
GaAs Pre-Driver for Basestation
Amplifiers
PA Stage for Commercial Wire-
less Infrastructure
Class AB Operation for NMT,
GSM, DCS, PCS, UMTS, and
WLAN Transceiver Applications
2nd/3rd Stage LNA for Wireless
Infrastructure
NC
PACKAGE BASE
GND
Functional Block Diagram
Product Description
The RF3807 is a GaAs pre-driver power amplifier, specifically designed for wireless
infrastructure applications. Using a highly reliable GaAs HBT fabrication process,
this high-performance single-stage amplifier achieves high output power over a
broad frequency range. The RF3807 also provides excellent efficiency and thermal
stability through the use of a thermally-enhanced surface-mount plastic-slug pack-
age. Ease of integration is accomplished through the incorporation of an optimized
evaluation board design provided to achieve proper 50Ω operation. Various evalua-
tion boards are available to address a broad range of wireless infrastructure appli-
cations: NMT 450MHz, GSM850, GSM900, DCS1800, PCS1900, and UMTS2100.
Ordering Information
RF3807
RF3807PCK-410
RF3807PCK-411
RF3807PCK-412
RF3807PCK-413
RF3807PCK-414
RF3807PCK-415
GaAs HBT Pre-Driver Amplifier
Fully Assembled Evaluation Board, 450MHz
Fully Assembled Evaluation Board, 869MHz to 894MHz
Fully Assembled Evaluation Board, 920MHz to 960MHz
Fully Assembled Evaluation Board, 1800MHz to 1880MHz
Fully Assembled Evaluation Board, 1930MHz to 1990MHz
Fully Assembled Evaluation Board, UMTS
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A5 DS080220
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 20
RF3807
Absolute Maximum Ratings
Parameter
Supply Voltage (V
CC
and V
BIAS
)
Reference Current (I
REF
)
DC Supply Current
Maximum Input Power
Output Load VSWR @ P1dB
Operating Ambient Temperature
Storage Temperature
Rating
9.0
30
250
see below
4:1
-40 to +85
-40 to +150
Unit
V
mA
mA
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
°C
°C
Parameter
Overall - 450MHz
Frequency
P1dB
P
IN
, Maximum
Total Efficiency
Total Power Added Efficiency
Gain (S21)
Second Harmonic (2fo)
Third Harmonic (3fo)
Input Return Loss (S11)
Output Return Loss (S22)
Min.
420
Specification
Typ.
Max.
480
Unit
MHz
dBm
Condition
I
REF
=14mA, V
CC
=8V, V
REF
=8V, V
BIAS
=8V,
Temp=+25°C
+29.0
18
53.5
52.5
16.5
-19.0
-21.0
-13.0
-6.5
40.0
42.0
43.5
44.5
dBm
%
%
dB
dBc
dBc
dB
dB
dBm
dBm
dBm
dBm
15dBm/tone
17dBm/tone
19dBm/tone
21dBm/tone
@P1dB
@P1dB
@P1dB
@P1dB
Two-Tone Specification
OIP3
2 of 20
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A5 DS080220
RF3807
Parameter
Overall - GSM800
Frequency
P1dB
P
IN
, Maximum
Total Efficiency
Total Power Added Efficiency
Gain (S21)
Second Harmonic (2fo)
Third Harmonic (3fo)
Input Return Loss (S11)
Output Return Loss (S22)
56
55
16.5
-20.0
-39.0
-18.0
-12.0
38.5
41.0
44.0
45.0
869
+30.5
16
894
MHz
dBm
dBm
%
%
dB
dBc
dBc
dB
dB
dBm
dBm
dBm
dBm
960
+30.5
16
56
55
16.5
-22.0
-30.5
-22.0
-8.5
42.5
43.0
44.0
42.0
MHz
dBm
dBm
%
%
dB
dBc
dBc
dB
dB
dBm
dBm
dBm
dBm
15dBm/tone
17dBm/tone
19dBm/tone
21dBm/tone
@P1dB
@P1dB
@P1dB
@P1dB
15dBm/tone
17dBm/tone
19dBm/tone
21dBm/tone
I
REF
=14mA, V
CC
=8V, V
REF
=8V, V
BIAS
=8V,
Temp=+25°C
@P1dB
@P1dB
@P1dB
@P1dB
I
REF
=14mA, V
CC
=8V, V
REF
=8V, V
BIAS
=8V,
Temp=+25°C
Min.
Specification
Typ.
Max.
Unit
Condition
Two-Tone Specification
OIP3
Overall - GSM900
Frequency
P1dB
P
IN
, Maximum
Total Efficiency
Total Power Added Efficiency
Gain (S21)
Second Harmonic (2fo)
Third Harmonic (3fo)
Input Return Loss (S11)
Output Return Loss (S22)
920
Two-Tone Specification
OIP3
Rev A5 DS080220
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 20
RF3807
Parameter
Overall - DCS1800
Frequency
P1dB
P
IN
, Maximum
Total Efficiency
Total Power Added Efficiency
Gain (S21)
Second Harmonic (2fo)
Third Harmonic (3fo)
Input Return Loss (S11)
Output Return Loss (S22)
53.0
52.0
14.5
-36.0
-36.0
-14.0
-6.0
40.0
41.0
42.0
42.0
1805
29.0
18.0
1880
MHz
dBm
dBm
%
%
dB
dBc
dBc
dB
dB
dBm
dBm
dBm
dBm
1990
28.0
18.0
49.0
48.0
14.0
-41.0
-41.0
-12.0
-7.0
39.5
41.5
42.5
41.5
dB
dBm
dBm
dBm
dBm
15dBm/tone
17dBm/tone
19dBm/tone
21dBm/tone
MHz
dBm
dBm
%
%
dB
dBc
dBc
@P1dB
@P1dB
@P1dB
@P1dB
15dBm/tone
17dBm/tone
19dBm/tone
21dBm/tone
I
REF
=14mA, V
CC
=8V, V
REF
=8V, V
BIAS
=8V,
Temp=+25°C
@P1dB
@P1dB
@P1dB
@P1dB
I
REF
=14mA, V
CC
=8V, V
REF
=8V, V
BIAS
=8V,
Temp=+25°C
Min.
Specification
Typ.
Max.
Unit
Condition
Two-Tone Specification
OIP3
Overall - PCS1900
Frequency
P1dB
P
IN
, Maximum
Total Efficiency
Total Power Added Efficiency
Gain (S21)
Second Harmonic (2fo)
Third Harmonic (3fo)
Input Return Loss (S11)
Output Return Loss (S22)
1930
Two-Tone Specification
OIP3
4 of 20
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A5 DS080220
RF3807
Parameter
UMTS 2100
Frequency
P1dB
P
IN
, Maximum
Total Efficiency
Total Power Added Efficiency
Gain (S21)
Second Harmonic (2fo)
Third Harmonic (3fo)
Input Return Loss (S11)
Output Return Loss (S22)
12.5
46
45
14.0
-35.0
-56.0
-16.0
-11.0
38.5
39.5
40.5
42.0
40.5
15
2110
+28.0
+28.5
18
2170
MHz
dBm
dBm
%
%
dB
dBc
dBc
dB
dB
dBm
dBm
dBm
dBm
9.0
130
30
V
mA
mA
μA
V
CC
=V
REF
=V
BIAS
=8V, R
BIAS
=340Ω
V
CC
=V
REF
=V
BIAS
=8V, R
BIAS
=340Ω
V
REF
=0V, V
CC
=8V
15dBm/tone
17dBm/tone
19dBm/tone
21dBm/tone
@P1dB
@P1dB
@P1dB
@P1dB
I
REF
=14mA, V
CC
=8V, V
REF
=8V, V
BIAS
=8V,
Temp=+25°C
Min.
Specification
Typ.
Max.
Unit
Condition
Two-Tone Specification
OIP3
Power Supply
Power Supply Voltage
Supply Current (I
CC
+I
BIAS
)
Control Current (I
REF
)
Power Down Current
4.5
95
8.0
112
14
Bias Table
V
CC
8
5
V
BIAS
8
5
V
REF
8
5
R
BIAS
340
43
I
REF
14
24
I
CQ
111
111
Comments
For equivalent I
CQ
to 8V case
Rev A5 DS080220
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 20
查看更多>
参数对比
与RF3807PCK-411相近的元器件有:RF3807、RF3807_1、RF3807PCK-410、RF3807PCK-412、RF3807PCK-413、RF3807PCK-414。描述及对比如下:
型号 RF3807PCK-411 RF3807 RF3807_1 RF3807PCK-410 RF3807PCK-412 RF3807PCK-413 RF3807PCK-414
描述 GaAs HBT PRE-DRIVER AMPLIFIER GaAs HBT PRE-DRIVER AMPLIFIER GaAs HBT PRE-DRIVER AMPLIFIER GaAs HBT PRE-DRIVER AMPLIFIER GaAs HBT PRE-DRIVER AMPLIFIER GaAs HBT PRE-DRIVER AMPLIFIER GaAs HBT PRE-DRIVER AMPLIFIER
热门器件
热门资源推荐
器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
需要登录后才可以下载。
登录取消