RF5163
3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER
Package: QFN, 16-Pin, 4x4
Features
Single 3.3V or 5V Power Sup-
ply
+33dBm Saturated Output
Power (typ.)
20dB Large Signal Gain (typ.)
2.0% EVM @ +26dBm,
54Mbps (typ.)
Separate Power
Detect/Power Down Pins
1800MHz to 2500MHz Fre-
quency Range
802.11b/g/n Access Points
PCS Communication Systems
2.4GHz ISM Band Applica-
tions
Commercial and Consumer
Systems
Portable Battery-Powered
Equipment
Broadband Spread-Spectrum
Systems
VCC1
VCC1
14
16
RF IN 1
VREG1GND 2
P DOWN 3
P DETECT 4
5
VREG1
VCC
15
13
12 RF OUT
11 RF OUT
10 RF OUT
Bias
GND
9 GND
8
NC
VREG2
Functional Block Diagram
Product Description
The RF5163 is a linear, medium-power, high-efficiency amplifier IC designed specif-
ically for low voltage operation. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 802.11b/g/n access point transmit-
ters. The device is provided in a 4mmx4mm, 16-pin, leadless chip carrier with a
backside ground. The RF5163 is designed to maintain linearity over a wide range of
supply voltage and power output.
Ordering Information
RF5163
RF5163PCK-410
Standard 25 piece bag
Fully assembled evaluation board tuned for 2.4GHz to
2.5GHz and 5 loose sample pieces
GaAs HBT
GaAs MESFET
InGaP HBT
Optimum Technology Matching® Applied
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
VREG2 GND
Applications
6
7
1 of 14
RF5163
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (V
PC
)
DC Supply Current
Input RF Power
Operating Ambient Temperature
Reduced Performance Tempera-
ture
Storage Temperature
Moisture sensitivity
Rating
-0.5 to +5.5
-0.5 to 3.3
1000
+15
-30 to +85
-40 to -30
-40 to +150
JEDEC Level 3
Unit
V
DC
V
mA
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Overall
Frequency Range
Compliance
Output Power
Min.
Specification
Typ.
Max.
Unit
Condition
T=25 °C, V
CC
=5.0V, V
REG1,2
=3V,
Freq=2450MHz
2400 to 2500
+26
MHz
IEEE802.11g and IEEE802.11b
dBm
With 802.11g modulation (54 Mbit/s) and
meeting 802.11g spectral mask @ <2.5% max-
imum EVM (RMS, mean).
Increase over EVM floor; RF P
OUT
=+26dBm
@ +6dBm RF Pin
Please see Theory of Operation.
No oscillation
V
DC
V
DC
V
mA
mA
V
mA
Power Down “ON”, P
OUT
=+26dBm
Idle current
Pin 3 (P_DOWN) Voltage<0.6V
DC
Pin 3 (P_DOWN) Voltage>2.5V
DC
EVM
Gain
Input Impedance
Output VSWR
2.0
20
10:1
0.6
4.0
3.0 to 5.0
520
260
3.0
5
5.0
%
dB
Power Down
V
CC
and V
CC1
are “ON”
V
CC
and V
CC1
are “OFF”
Power Supply
Operating Voltage
Current Consumption
V
REG
(Bias) Voltage (V
REG1
, V
REG2
)
V
REG
(Bias) Current (Total)
2 of 14
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DS110617
RF5163
Pin
1
2
3
4
Function
RF IN
VREG1 GND
P DOWN
P DETECT
Description
Interface Schematic
RF input. Matching network with DC-block required; see evaluation board
See pin 14.
schematic for details.
First stage bias circuit ground. Keep PCB traces short and connect immedi-
ately to ground plane.
Power down pin. Apply <0.6V
DC
to power up both V
CC
and V
CC1
. Apply
2.5V
DC
to 3.5V
DC
to power down. If function is not desired pin may be
grounded.
The P_DOWN and P_DETECT pins can be used in conjunction with an exter-
nal feedback path to provide an RF power control function for the RF5163.
The power control function is based on sampling the RF drive to the final
stage of the RF5163. If function is not desired, pin may be left untermi-
nated.
First stage bias input - requires regulated voltage to maintain desired I
CC
.
Second stage bias input - requires regulated voltage to maintain desired
I
CC
. May be tied to pin 5 input after series resistors.
Second stage bias circuit ground. Ground with a 10nH inductor.
No connect (N/C).
Ground connection. For best performance, keep PCB trace lengths short.
Same as pin 11.
RF output and bias for the output stage. The power supply for the output
transistor needs to be supplied to this pin. This can be done through a
quarter-wave (/4) microstrip line that is RF grounded at the other end, or
through an RF inductor that supports the required DC current.
Same as pin 11.
Same as pin 8.
Power supply pin for first stage. External low frequency bypass capacitors
should be connected if no other low frequency decoupling is employed.
RF IN
VCC
5
6
7
8
9
10
11
VREG1
VREG2
VREG2 GND
NC
GND
RF OUT
RF OUT
RF OUT
12
13
14
RF OUT
GND
VCC1
BIAS
15
16
Pkg
Base
VCC1
VCC
GND
Same as pin 14.
Power supply pin for bias circuits. External low frequency bypass capacitors
should be connected if no other low frequency decoupling is employed.
Ground connection. The back side of the package should be connected to
the ground plane through as short a connection as possible, e.g., PCB vias
under the device are recommended.
See pins 1 and 2.
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RF5163
Theory of Operation and Application Information
RF5163PCBA Evaluation Board
The RF5163 is a two-stage device with a nominal gain of 20dB in the 2.4GHz to 2.5GHz Industrial, Scientific, and Medical
(ISM) band. The RF5163 is designed primarily for fixed IEEE802.11g/n WiFi applications requiring exceptionally linear RF out-
put powers of +23dBm to +28dBm.
The RF5163 requires a single positive supply of 5.0V nominal to operate to full specifications. Power control is provided
through two (2) separate and independent methods. The first method is through two (2) bias control pins (V
REG1
and V
REG2
). In
most applications, both V
REG1
and V
REG2
are tied together and used as a single control input. The second method is through
the use of a dedicated Power Down (P_Down) pin. Applying less than (<) 0.6V
DC
to the RF5163 P_Down pin fully turns “ON”
both V
CC
and V
CC1
power circuits. Applying 2.5V
DC
to 3.5V
DC
to the RF5163 P_Down pin fully turns “OFF” both V
CC
and V
CC1
cir-
cuits. Turning the RF5163 “ON” and/or “OFF” by using the P_Down pin is accomplished without regard to system voltage regu-
lator turn-on and turn-off settling time restraints.
There is some external matching on the input and output of the RF5163, thus allowing the RF5163 to be used in other applica-
tions outside the 2.4GHz to 2.5GHz ISM band (such as IEEE802.16d/e in the 2.3GHz band). Both the input and output of the
device require a series DC-blocking capacitor. In some cases, a capacitor used as a matching component can also serve as the
blocking cap. The circuits used on the RF5163PCBA and RF5163PCBA-WD Evaluation Boards are optimized for V
CC
=+5.0V
DC
operation.
The RF5163 is not difficult to implement, however, care in printed circuit board layout and component selection is highly rec-
ommended when implementing 2.5GHz capable circuits. Critical passive components in the RF5163PCBA Evaluation Board
circuit are interstage and output matching components (C13, C15, and C16). In these cases, high-Q (Quality factor) capacitors
suitable for RF application are used on the evaluation board (an evaluation board bill of material (BOM) is available upon
request). High-Q components are not required in every design, but it is strongly recommended that the initial design be imple-
mented with the same components used on the RF5163PCBA Evaluation Board. After establishing initial baseline perfor-
mance, less costly components may be substituted to evaluate performance impact.
The input matching inductor L1 and the DC blocking capacitor C14 helps to tune the peak of the small-signal gain response as
well as improve the linearity of the PA. The input impedance of the PA will not be 50 with this input match so do not use a
Smith Chart for guidance for value selection and parts placement. With a 50 input into the input match as shown on the
Evaluation Board schematic, the PA will perform as expected with an expected input return loss of ~-2dB. The input L1 should
be placed with reference to the position as shown on the RF5163PCBA Evaluation Board schematic.
The interstage matching capacitor, C13, along with the combined inductance of the internal bond wire, the short length of cir-
cuit board trace, and the parasitic inductance of the capacitor, tunes the peak of the small-signal gain response. The trace
length between C13 and RF5163 pins 14 and 15 should be kept as close to the evaluation board schematic as possible.
The output matching capacitors are C15 and C16. These capacitors are placed with reference to position along transmission
line segments TL1 and TL2, as shown on the RF5163PCBA Evaluation Board schematic. These segments should be duplicated
as closely as possible. Due to variations in FR-4 characteristics and PCB manufacturer process variations, some benefit is
obtained from small adjustments to TL1 and TL2 length when the evaluation board is duplicated. Prior to full scale manufactur-
ing, the board layout of early prototypes should include some additional exposed ground areas around C15 and C16 to opti-
mize this part of the circuit. The AC coupling capacitor, C10, may be placed very close to C15. The output match is complete at
C15.
R3 at RF5163 pin 4 (P_Detect) desensitizes the P_Detect line from the value of C12. Without R3, the value of C12 may affect
error vector magnitude (EVM) under certain operational conditions.
4 of 14
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS110617
RF5163
The RF5163 has primarily been characterized with a voltage on V
REG1
and V
REG2
of +3.0V
DC
. However, the RF5163 will operate
from a wide range of control voltages. If a different control voltage is desired, contact RFMD Sales or Applications Engineering
for additional data and guidance.
RF5163PCBA-WD Evaluation Board:
The RF5163PCBA-WD Evaluation Board was developed to assist prospective customers of the RF5163 with a completely char-
acterized medium to high power amplifier solution incorporating a highly linear driver amplifier stage. In applications requiring
more than 20dB to 22dB amplifier stage gain, the RF5163PCBA-WD Evaluation Board design may be employed to achieve
higher gain combined with ultra linear RF power output for high peak-to-average power ratio applications (e.g., orthogonal fre-
quency division multiplex (OFDM) modulation).
Package Drawing
-A-
2 PLCS
0.10 C A
0.05 C
4.00 SQ .
2.00
TYP
0.10 C B
2 PLCS
0.70
0.65
0.90
0.85
0.05
0.00
12°
M AX
0.10 C B
2 PLCS
-B-
-C-
1.87
TYP
3.75 SQ
0.10 C A
2 PLCS
SEATING
PLANE
Shaded lead is pin 1.
Dim ensions in m m.
0.10 M C A B
0.60
0.24
TYP
0.35
0.23
Pin 1 ID
0.20 R
2.25
SQ .
1.95
0.75
TYP
0.50
0.65
DS110617
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 14
