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RFCM3080TR13

40-1003MHZ GAAS/GAN PUSH PULL MODULE

厂商名称:RF Micro Devices (Qorvo)

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RFCM3080
40-1003MHZ GAAS/GAN PUSH PULL MODULE
Package: 9 pin, 11.0 mm x 8.5 mm x 1.375mm
RFCM3080
Features
Excellent Linearity
Superior Return Loss Performance
Extremely Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under all
Terminations
27.5dB Min. Gain at 1003MHz
270mA Max. at 24VDC
Applications
40MHz to 1003MHz CATV Amplifier
Systems
Functional Block Diagram
Product Description
The RFCM3080 is a Push Pull amplifier SMD module. The part employs GaAs MESFET, GaAs
pHemt and GaN Hemt die and is operated from 40MHz to 1003MHz. It provides excellent
linearity and superior return loss performance with low noise and optimal reliability. DC
current of the device can be externally adjusted for optimum distortion performance vs.
power consumption over a wide range of output level.
DC current of the device can be externally adjusted for optimum distortion performance
versus power consumption over a wide range of output level.
Ordering Information
RFCM3080SB
RFCM3080SQ
RFCM3080SR
RFCM3080TR7
RFCM3080TR13
RFCM3080PCBA-410
RFCM3080PCK-410
Sample Bag 5 pieces
Sample Bag 25 pieces
7” Reel with 100 pieces
7” Reel with 500 pieces
13” Reel with 1000 pieces
Fully Assembled Evaluation Board
Fully Assembled Evaluation Board with Sample Pack
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity
TM
, PowerStar®, POLARIS
TM
TOTAL RADIO
TM
and UltimateBlue
TM
are trademarks of RFMD, LLC< BLETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the properly of their respective owners. ©2009, RF Micro Devices, Inc.
DS130711
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com
1 of 6
RFCM3080
40-1003MHZ GAAS/GAN PUSH PULL MODULE
Absolute Maximum Ratings
Parameter
RF Input Voltage (single tone)
DC Supply Over-Voltage (5 minutes)
Storage Temperature
Operating Mounting Base Temperature
Rating
70
30
-40 to +100
-30 to +100
Unit
dBmV
V
°C
°C
Parameter
Overall
Power Gain
Slope
[1]
Flatness of Frequency Response
Input Return Loss
Min.
27.5
0.5
-20
-18
-17
-16
-20
-19
-18
-17
Specification
Typ.
27.0
28.5
1.0
Max.
29.0
2.0
0.8
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
mA
dBc
dBc
dBc
dB
Condition
V+= 24V; TMB=30°C; ZS=ZL=75Ω
f=50MHz
f=1003MHz
f=40MHz to 1003MHz
f=40MHz to 1003MHz
f=40MHz to 320MHz
f=320MHz to 640MHz
f=640MHz to 870MHz
f=870MHz to 1003MHz
f=40MHz to 320MHz
f=320MHz to 640MHz
f=640MHz to 870MHz
f=870MHz to 1003MHz
f=50MHz to 1003MHz
V+= 24V; TMB=30°C; ZS=ZL=75Ω
V
O
=46dBmV flat, 79 analog channels plus 75 digital
channels (-6dB offset)
[2]
V
O
=46dBmV flat, 79 analog channels plus 75 digital
channels (-6dB offset)
[2]
V
O
=46dBmV flat, 79 analog channels plus 75 digital
channels (-6dB offset)
[2]
V
O
=46dBmV flat, 79 analog channels plus 75 digital
channels (-6dB offset)
[2]
Output Return Loss
Noise Figure
Total Current Consumption (DC)
4.5
250.0
-70
-63
-75
65
69
5.0
270.0
-65
-58
-66
Distortion data 40MHz to 550MHz
CTB
XMOD
CSO
CIN
1.
2.
The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +46dBmV flat output level, plus 75 digital channels, -6dB offset
relative to the equivalent analog carrier.Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is
defined by the NCTA.Composite Triple Beat (CTB) - The CTB parameter is defined by the NCTA.Cross Modulation (XMOD) - Cross
modulation (XMOD) is measured at baseband (selective voltmeter method), referenced to 100% modulation of the car-rier being
tested.Carrier to Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity
TM
, PowerStar®, POLARIS
TM
TOTAL RADIO
TM
and UltimateBlue
TM
are trademarks of RFMD, LLC< BLETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the properly of their respective owners. ©2009, RF Micro Devices, Inc.
DS130711
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com
2 of 6
RFCM3080
40-1003MHZ GAAS/GAN PUSH PULL MODULE
Current Adjustment Using Resistor R5
The RFCM3080 can be operated over a wide range of current to provide maximum required performance with minimum current consumption.
Changing the value of resistor R5 on application circuit allows a variation of the current between 200mA and 255mA (typ.). Within the range of
current between 200mA and 255mA gain (S21) change is less than 0.4dB and noise figure change is less than 0.1dB.
Current vs. Resistor R5
270
260
250
Current [mA]
240
230
220
210
200
190
10
100
1000
Resistor R5 [Ω]
10000
100000
Device Current [mA],
typical
255
250
245
240
235
230
225
220
215
210
205
200
R5 [Ω]
open
9100
4300
2700
1800
1200
820
560
390
240
130
39
V+= 24V; T
MB
=30°C;
Z
S
=Z
L
=75Ω
Distortion Degradation
over Device Current, typical values
260
250
Current [mA]
240
230
220
210
200
190
0
1
2
3
4
5
6
7
CTB and CIN degradation [dB]
Test condition:
V+= 24V; T
MB
=30°C; Z
S
=Z
L
=75Ω;
VO=46dBmV flat, 79 analog channels plus 75 digital channels (-6dB offset)
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity
TM
, PowerStar®, POLARIS
TM
TOTAL RADIO
TM
and UltimateBlue
TM
are trademarks of RFMD, LLC< BLETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the properly of their respective owners. ©2009, RF Micro Devices, Inc.
CTB
CIN
DS130711
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com
3 of 6
RFCM3080
40-1003MHZ GAAS/GAN PUSH PULL MODULE
Application Circuit
FB1
Bead 60Ω
V+
C1
4n7
D1
TGL34-33A
R1
10kΩ
GND
D2
MM3Z5V6T1
T1
RFXF0006
C3
0.5pF
C2
4.7nF
RF IN
R7
R4
10Ω
R5
1
2
9
8
T2
RFXF0008
C13
DNI
T3
RFXF0007
C7
4.7nF
RF OUT
U1
RFCM3080
3
4
7
6
5
C14
DNI
C8
4.7nF
C11
0.5pF
R10
C12
DNI
C9
DNI
C10
DNI
D3
TQP200002
C6
0.5pF
R11
R8
R12
R9
Evaluation Board Layout
Note:
The ground plane of the RFCM3080 module should be soldered onto a board equipped with as many thermal vias as possible. Underneath this
thermal via array a heat sink with thermal grease needs to be placed which is able to dissipate the complete module DC power (up to 6.5 Watts).
In any case the module backside temperature should not exceed 100°C.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity
TM
, PowerStar®, POLARIS
TM
TOTAL RADIO
TM
and UltimateBlue
TM
are trademarks of RFMD, LLC< BLETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the properly of their respective owners. ©2009, RF Micro Devices, Inc.
DS130711
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com
4 of 6
RFCM3080
40-1003MHZ GAAS/GAN PUSH PULL MODULE
Component Chart
Component Type
Capacitor
Capacitor
Capacitor
Resistor
Resistor
Resistor
Resistor
Impedance Bead
Transient Voltage
Suppressor Diode
Zener Diode
ESD Protection Diode
Transformer
Transformer
Transformer
DUT
Value
4.7nF
DNI
0.5pF
10kΩ
10Ω
DNI
see page 3
60Ω @ 100MHz
TGL34-33A
MM3Z5V6T1G
TQP200002
RFXF0006
RFXF0008
RFXF0007
RFCM3080
Qty
4
5
3
1
1
6
1
1
1
1
1
1
1
1
1
Designator
C1, C2, C7, C8
C9, C10, C12, C13, C14
C3, C6, C11
R1
R4
R7, R8, R9, R10, R11, R12
R5
FB1
D1
D2
D3
T1
T2
T3
U1
Comment
optional to improve matching in application
optional to improve matching in application
optional to set current-value
Package Drawing
Dimensions in millimeters
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity
TM
, PowerStar®, POLARIS
TM
TOTAL RADIO
TM
and UltimateBlue
TM
are trademarks of RFMD, LLC< BLETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered
trademarks are the properly of their respective owners. ©2009, RF Micro Devices, Inc.
DS130711
7628 Thorndike Road, Greensboro, NC 27409-9421 – For sales or technical
Support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com
5 of 6
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参数对比
与RFCM3080TR13相近的元器件有:RFCM3080、RFCM3080PCBA-410、RFCM3080SB、RFCM3080SQ、RFCM3080TR7、RFCM3080PCK-410、RFCM3080SR。描述及对比如下:
型号 RFCM3080TR13 RFCM3080 RFCM3080PCBA-410 RFCM3080SB RFCM3080SQ RFCM3080TR7 RFCM3080PCK-410 RFCM3080SR
描述 40-1003MHZ GAAS/GAN PUSH PULL MODULE 40-1003MHZ GAAS/GAN PUSH PULL MODULE 40-1003MHZ GAAS/GAN PUSH PULL MODULE 40-1003MHZ GAAS/GAN PUSH PULL MODULE 40-1003MHZ GAAS/GAN PUSH PULL MODULE 40-1003MHZ GAAS/GAN PUSH PULL MODULE 40-1003MHZ GAAS/GAN PUSH PULL MODULE 40-1003MHZ GAAS/GAN PUSH PULL MODULE
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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