Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
180
200
V
GS(TH)
I
DSS
V
GS
= V
DS
, I
D
= 250µA, (Figure 8)
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS,
V
GS
= 0V,
T
C
= 125
o
C
2
-
-
-
-
-
-
-
-
-
V
DS
= 25V, V
GS
= 0V, f = 1MHz,
(Figure 9)
-
-
-
RFM12N18, RFM12N20
RFP12N18, RFP12N20
-
-
-
-
-
-
-
-
-
-
35
130
120
105
-
-
-
-
-
-
-
4
1
25
±100
0.250
3.0
50
200
180
160
1700
600
300
1.25
1.67
V
V
V
µA
µA
nA
Ω
V
ns
ns
ns
ns
pF
pF
pF
o
C/W
o
C/W
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
RFM12N18, RFP12N18
RFM12N20, RFP12N20
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Drain to Source On Voltage (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
I
GSS
r
DS(ON)
V
DS(ON)
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
R
θJC
V
GS
=
±20V,
V
DS
= 0V
I
D
= 12A, V
GS
= 10V, (Figures 6, 7)
I
D
= 12A, V
GS
= 10V
V
DD
= 100V, I
D
≈
6A, R
G
= 50Ω,
R
L
= 16.5Ω, V
GS
= 10V,
(Figures 10, 11, 12)
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
NOTE:
2. Pulsed: pulse width
≤
300µs maximum, duty cycle
≤
2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
SYMBOL
V
SD
t
rr
I
SD
= 6A
I
SD
= 4A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
TYP
-
325
MAX
1.4
-
UNITS
V
ns
5-2
RFM12N18, RFM12N20, RFP12N18, RFP12N20
Typical Performance
Curves Unless Otherwise Specified
1.2
POWER DISSIPATION MULTIPLIER
1.0
I
D
, DRAIN CURRENT (A)
0
50
100
150
14
12
10
8
6
4
2
0
25
50
75
100
125
o
C)
T
C
, CASE TEMPERATURE (
150
0.8
0.6
0.4
0.2
0
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
100
T
C
= 25
o
C
I
D
(MAX)
CONTINUOUS
30
PULSE DURATION = 80µs V
GS
= 10V
DUTY CYCLE
≤
2%
25 CASE TEMPERATURE
T
C
= 25
o
C
V
= 20V
GS
I
D
, DRAIN CURRENT (A)
V
GS
= 8V
V
GS
= 7V
V
GS
= 6V
I
D
, DRAIN CURRENT (A)
10
20
15
1
OPERATION IN
THIS AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS
(MAX) 180V
RFM12N18, RFP12N18
V
DSS
(MAX) 200V
RFM12N20, RFP12N20
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1000
V
GS
= 5V
10
5
0
0
V
GS
= 4V
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
6
7
0.1
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
40
30
25
20
15
10
125
o
C
5
-40
o
C
0
0
1
-40
o
C
25
o
C
125
o
C
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (Ω)
V
DS
= 10V
35 PULSE DURATION = 80µs
DUTY CYCLE
≤
2%
I
D
, DRAIN CURRENT (A)
0.6
V
GS
= 10V
PULSE DURATION = 80µs
0.5 DUTY CYCLE
≤
2%
0.4
125
o
C
0.3
0.2
0.1
0
9
10
25
o
C
-40
o
C
2
3
4
5
6
7
8
V
GS
, GATE TO SOURCE VOLTAGE (V)
0
5
10
15
20
25
30
35
I
D
, DRAIN CURRENT (A)
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
5-3
RFM12N18, RFM12N20, RFP12N18, RFP12N20
Typical Performance
Curves Unless Otherwise Specified
2
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
I
D
= 12A, V
GS
= 10V
1.2
NORMALIZED GATE
THRESHOLD VOLTAGE
1.5
1.1
1
0.9
0.8
0.7
0
-50
0.6
-50
(Continued)
1.3
V
GS
= V
DS
I
D
= 250µA
1
0.5
0
50
100
150
200
T
J
, JUNCTION TEMPERATURE (
o
C)
0
50
100
150
o
C)
T
J
, JUNCTION TEMPERATURE (
200
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
200
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
DS
GATE
SOURCE
VOLTAGE
R
L
= 16.67Ω
I
G(REF)
= 1mA
V
GS
= 10V
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
8
V
DD
= BV
DSS
6
1600
1400
C, CAPACITANCE (pF)
1200
1000
800
600
C
OSS
400
200
0
0
C
RSS
10
20
30
40
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
50
C
ISS
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
150
V
DD
= BV
DSS
100
4
50
2
DRAIN SOURCE VOLTAGE
0
20
I
G(REF)
I
G(ACT)
t, TIME (µs)
80
I
G(REF)
I
G(ACT)
0
NOTE: Refer to Harris Application Notes AN7254 and AN7260.
