Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
20
20
±10
45
Refer to Peak Current Curve
Refer to UIS Curve
90
0.606
-55 to 175
260
W
W/
o
C
o
C
o
C
UNITS
V
V
V
A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 250µA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
DS
= 20V,
V
GS
= 0V
V
GS
=
±10V
I
D
= 45A, V
GS
= 5V
V
DD
= 15V, I
D
≅
45A,
R
L
= 0.33Ω, V
GS
= 5V,
R
GS
= 5Ω
T
C
= 25
o
C
T
C
= 150
o
C
MIN
20
1
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DS
= 15V, V
GS
= 0V,
f = 1MHz
V
DD
= 16V,
I
D
≅
45A,
R
L
= 0.35Ω
-
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
15
160
20
20
-
50
30
1.5
1300
724
250
-
-
MAX
-
2
1
50
±100
0.022
260
-
-
-
-
60
60
36
1.8
-
-
-
1.65
80
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate to Source Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θJC
R
θJA
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 45A
I
SD
= 45A, dI
SD
/dt = 100A/µs
MIN
-
-
TYP
-
-
MAX
1.5
125
UNITS
V
ns
2
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
175
0
25
I
D
, DRAIN CURRENT (A)
50
40
30
20
10
50
75
100
125
150
175
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
Z
θ
JC
, NORMALIZED
THERMAL IMPEDANCE
0.5
0.2
0.1
0.1
.05
.02
.01
SINGLE PULSE
0.01
10
-5
t
1
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x R
θ
JC
x Z
θ
JC
+ T
C
10
-3
10
-2
10
-1
10
0
10
1
t, RECTANGULAR PULSE DURATION (s)
P
DM
10
-4
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
500
T
C
= 25
o
C, T
J
= MAX RATED
I
DM
, PEAK CURRENT (A)
500
V
GS
= 10V
V
GS
= 5V
100
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I
I
D
, DRAIN CURRENT (A)
100
100µs
1ms
10
=
I
25
175 - T
C
150
10ms
100ms
DC
V
DSS
MAX = 20V
50
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
T
C
= 25
o
C
10
10
-5
10
-4
10
-3
10
-2
10
-1
t, PULSE WIDTH (s)
10
0
10
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
3
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Typical Performance Curves
(Continued)
200
I
AS
, AVALANCHE CURRENT (A)
100
I
D
, DRAIN CURRENT (A)
STARTING T
J
= 25
o
C
75
V
GS
= 4.5V
100
V
GS
= 10V
V
GS
= 5V
10
STARTING T
J
= 150
o
C
50
V
GS
= 4V
If R = 0
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
-V
DD
) +1]
1
0.001
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
10
100
25
V
GS
= 3.5V
V
GS
= 3V
o
C
PULSE DURATION = 250µs, T
C
= 25
0
0
1
2
3
4
5
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
100
I
D(ON)
, ON-STATE DRAIN CURRENT (A)
V
DD
= 15V
100
175
o
C
75
25
o
C
50
r
DS(ON)
, DRAIN TO SOURCE
ON RESISTANCE (mΩ)
FIGURE 7. SATURATION CHARACTERISTICS
-55
o
C
75
I
D
= 15A
50
I
D
= 30A
I
D
= 45A
I
D
= 2A
25
25
PULSE TEST
PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
0
0
1.5
3.0
4.5
6.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
7.5
PULSE DURATION = 250µs
0
2.5
3.0
3.5
4.0
4.5
5.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs
GATE VOLTAGE AND DRAIN CURRENT
2.0
PULSE DURATION = 250µs, V
GS
= 5V, I
D
= 45A
NORMALIZED ON RESISTANCE
350
V
DD
= 15V, I
D
= 45A, R
L
= 0.333Ω
300
t
r
SWITCHING TIME (ns)
250
200
150
t
f
100
t
d(OFF)
50
t
d(ON)
0
0
30
20
40
10
R
GS
, GATE TO SOURCE RESISTANCE (Ω)
50
1.5
1.0
0.5
0
-80
-40
0
40
80
120
T
J
, JUNCTION TEMPERATURE (
o
C)
160
200
FIGURE 10. SWITCHING TIME AS A FUNCTION OF GATE
RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4
RFP45N02L, RF1S45N02L, RF1S45N02LSM
Typical Performance Curves
(Continued)
2.0
V
GS
= V
DS
, I
D
= 250µA
NORMALIZED GATE
THRESHOLD VOLTAGE
1.5
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
2.0
I
D
= 250µA
1.5
1.0
1.0
0.5
0.5
0
-80
-40
0
40
80
120
160
o
C)
T
J
, JUNCTION TEMPERATURE (
200
0
-80
-40
0
40
80
120
160
200
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
FIGURE 13. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
2500
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
2000
C, CAPACITANCE (pF)
20
V
DD
= BV
DSS
15
V
DD
= BV
DSS
5.00
V
GS
, GATE TO SOURCE VOLTAGE (V)
1500
C
ISS
1000
C
OSS
500
C
RSS
R
L
= 0.44Ω
I
G(REF)
= 0.5mA
V
GS
= 5V
PLATEAU VOLTAGES IN
DESCENDING ORDER:
V
DD
= BV
DSS
V
DD
= 0.75 BV
DSS
V
DD
= 0.50 BV
DSS
V
DD
= 0.25 BV
DSS
3.75
10
2.50
5
1.25
0
0
5
10
15
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
0
-
20
---------------------
I G
(
AC T
)
I G
(
REF
)
t, TIME (µs)
-
80
---------------------
I G
(
AC T
)
I G
(
REF
)
FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
NOTE: Refer to Application Notes AN7254 and AN7260.
