Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T
pkg
50
50
±10
4
10
25
0.2
-55 to 150
300
260
RFP4N06L
60
60
±10
4
10
25
0.2
-55 to 150
300
260
UNITS
V
V
V
A
A
W
W/
o
C
o
C
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
3. Repetitive rating: pulse width limited by maximum junction temperature.
SYMBOL
V
SD
t
rr
I
SD
= 1A
I
SD
= 2A, dl
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
TYP
-
150
MAX
1.4
-
UNITS
V
ns
6-275
RFP4N05L, RFP4N06L
Typical Performance Curves
1.2
POWER DISSIPATION MULTIPLIER
Unless Otherwise Specified
4.5
4.0
1.0
I
D
, DRAIN CURRENT (A)
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
T
C
, CASE TEMPERATURE (
o
C)
150
0.8
0.6
0.4
0.2
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
T
J
= MAX RATED
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
12
10
8
6
4
2
0
1
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
100
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
= 25
o
C
V
GS
= 10V
V
GS
= 7.5V
1
OPERATION IN THIS AREA
LIMITED BY r
DS(ON)
0.10
RFP4N05L
RFP4N06L
0.01
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 4V
V
GS
= 3.5V
V
GS
= 3V
V
GS
= 2.5V
V
GS
= 2V
1
2
3
4
5
6
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
7
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. SATURATION CHARACTERISTICS
I
DS(ON)
, DRAIN TO SOURCE CURRENT (A)
6
5
4
3
2
1
-40
o
C
0
1
2
3
4
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
6
r
DS(ON)
, DRAIN TO SOURCE ON
RESISTANCE (Ω)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
DS
= 10V
o
o
-40
o
C 25 C 125 C
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
GS
= 5V
125
o
C
25
o
C
-40
o
C
125
o
C
2
4
I
D,
DRAIN CURRENT (A)
6
FIGURE 5. TRANSFER CHARACTERISTICS
FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
6-276
RFP4N05L, RFP4N06L
Typical Performance Curves
2.0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
I
D
= 4A
V
GS
= 5V
NORMALIZED GATE
THRESHOLD VOLTAGE
Unless Otherwise Specified
(Continued)
2.0
V
GS
= V
DS
I
D
= 250µA
1.5
1.5
1.0
1.0
0.5
0.5
0
-50
0
50
100
T
J
, JUNCTION TEMPERATURE (
o
C)
150
0
50
0
50
100
150
o
C)
T
J
, JUNCTION TEMPERATURE (
200
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
400
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GS
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
60
R
L
= 15Ω
I
G(REF)
= 0.095mA
V
GS
= 5V
GATE
SOURCE
V
DD
= BV
DSS
VOLTAGE V
DD
= BV
DSS
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
300
8
45
6
200
C
ISS
30
4
15
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
DRAIN SOURCE VOLTAGE
100
C
OSS
C
RSS
2
0
0
10
20
30
40
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
50
0
0
I
20
G(REF)
I
G(ACT)
t, TIME (µs)
I
80
G(REF)
I
G(ACT)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
Test Circuits and Waveforms
t
ON
t
d(ON)
t
r
R
L
V
DS
+
t
OFF
t
d(OFF)
t
f
90%
90%
R
G
DUT
-
V
DD
0
10%
90%
10%
V
GS
V
GS
0
10%
50%
PULSE WIDTH
50%
FIGURE 11. SWITCHING TIME TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
6-277
RFP4N05L, RFP4N06L
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