Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Exceeding any one or a combination of these limits may cause permanent damage
.
Nominal Operating Parameters
Specification
Parameter
Min
General Performance
Small Signal Power Gain, S21
12.0
11.0
13.0
13.0
11.0
9.0
9.5
8.0
Gain Flatness, GF
Input and Output VSWR
±0.6
2.4:1
2.0:1
2.5:1
Bandwidth, BW
Output Power at -1dB
Compression, P1dB
12.5
13.0
13.8
12.0
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, V
D
Gain Temperature Coefficient,
/
3.6
5.1
+27.1
-15
3.9
-0.0015
Unit
Typ
Max
Condition
V
D
= +3.9V, I
CC
= 50mA, Z
0
= 50Ω, T
A
= +25°C
dB
dB
dB
dB
dB
dB
f = 0.1GHz to 1.0GHz
f = 1.0GHz to 4.0GHz
f = 4.0GHz to 6.0GHz
f = 6.0GHz to 12.0GHz
f = 12.0GHz to 14.0GHz
f = 0.10GHz to 4.0GHz
f = 0.1GHz to 4.0GHz
f = 4.0GHz to 6.0GHz
f = 6.0GHz to 12.0GHz
GHz
dBm
dBm
dBm
dB
dBm
dB
4.2
V
dB/°C
BW3 (3dB)
f = 2.0GHz
f = 6.0GHz
f = 14.0GHz
f = 3.0GHz
f = 2.0GHz
f = 0.1GHz to 12.0GHz
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or
customerservice@rfmd.com.
DS131004
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
2 of 11
NBB-300
Specification
Parameter
Min
MTTF versus Temperature
at I
CC
= 50mA
Case Temperature
Junction Temperature
MTTF
85
138
>1,000,000
°C
°C
hours
Unit
Typ
Max
Condition
Thermal Resistance
θ
JC
272
°C/W
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or
customerservice@rfmd.com.
DS131004
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
3 of 11
NBB-300
Pin Names and Descriptions
Pin
1
Name
RFIN
Description
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used
in most applications. DC coupling of the input is not allowed,
because this will override the internal feedback loop and cause
temperature instability.
Ground connection. For best performance, keep traces physically
short and connect immediately to ground plane.
RF output and bias pin. Biasing is accomplished with an external
series resistor and choke inductor to V
CC
. The resistor is selected
to set the DC current into this pin to a desired level. The resistor
value is determined by the following equation:
Interface Schematic
2
3
GND
RFOUT
Care should also be taken in the resistor selection to ensure that
the current into the part never exceeds maximum datasheet
operating current over the planned operating temperature. This
means that a resistor between the supply and this pin is always
required, even if a supply near 5.0V is available, to provide DC
feedback to prevent thermal runaway. Because DC is present on
this pin, a DC blocking capacitor, suitable for the frequency of
operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
4
GND
Same as pin 2.
Package Drawing
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or
customerservice@rfmd.com.
DS131004
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
4 of 11
NBB-300
Typical Bias Configuration
NOTE: Application notes related to biasing circuit, device footprint, and thermal considerations are available on request.
Recommended Bias Resistor Values
Supply Voltage, V
CC
(V)
Bias Resistor, R
CC
(Ω)
5
22
8
81
10
122
12
162
15
222
20
322
Chip Outline Drawing - NBB-300-D
(Chip Dimensions: 0.017” x 0.017” x 0.004”)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or
customerservice@rfmd.com.
DS131004
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
