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RG4

3 A, SILICON, RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:BILIN

厂商官网:http://www.galaxycn.com/

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BL
FEATURES
GALAXY ELECTRICAL
RG4Y(Z) --- RG4C(Z)
VOLTAGE RANGE: 70--- 1000 V
CURRENT: 2.0--- 3.5 A
HIGH EFFICIENCY RECTIFIER
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with freon, alcohol, lsopropand and
similar solvents
DO - 27
MECHANICAL DATA
Case: JEDEC DO-27, molded plastic
Terminals: Axial leads,solderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces, 1.15grams
Mounting: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RG4Y
Maximum peak repetitive reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
Peak forw ard surge current
10ms single half-sine-w ave
superimplsed on rated load
@T
J
=125
Maximum instantaneous forw ard voltage
@ I
F
=I
F(AV)
Maximum reverse current
@T
A
=25
@T
A
=75
RG4Z
200
140
200
3.0
RG4
400
280
400
RG4A
600
420
600
2.0
RG4C
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
70
49
70
3.5
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JL
T
J
T
STG
100.0
80.0
50.0
60.0
A
1.3
1000.0
5000.0
1.7
1.8
2.0
500.0
3.0
V
A
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
(Note3)
2500.0
50
70
8
- 55 ----- + 150
- 55 ----- + 150
www.galaxycn.com
ns
50
pF
/W
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
Document Number 0262037
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
RG4Y(Z)---RG4C(Z)
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
t
rr
+0.5A
D.U.T.
(+)
25VDC
(approx)
(-)
1
NONIN-
DUCTIVE
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
0
-0 .2 5 A
-1 .0 A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ
2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
AVERAGE FORWARD RECTIFIED CURRENT
AMPERES
INSTANTANEOUS FORWARD CURRENT
FIG.3 -- FORWARD DERATING CURVE
5
RG4Y
4
3
RG4Z,RG4
2
1
RG4A,RG4C
0
0
25
50
75
100
125
150
R G 4Y
10
EG 01Z
RG4
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
R G 4A
1.0
AMPERES
R G 4C
0.1
T
J
=25
Pu lse W idth =300
µ
S
0.01
0
0.4
0.8
1.2 1.6
2.0 2.4
2.8
3.2
3.6 4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
AMBIENT TEMPERATURE,
FIG.4 -- PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
FIG.5--TYPICAL JUNCTION CAPACITANCE
200
100
8 .3 m s S in g le H a lf
S in e -W a v e
80
R G 4Y
RG4Y,RG4Z,RG4
RG4A,RG4C
100
70
50
    
T
J
=25
AMPERES
60
R G 4 Z ,R G 4
40
R G 4A
20
R G 4C
20
10
0.1 0.2 0.4
1
2
4
10
20
40
100
0 1
5
10
50
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
Document Number 0262037
BL
GALAXY ELECTRICAL
2.
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参数对比
与RG4相近的元器件有:RG4A、RG4Y、RG4Z、RG4C、RG4ZZ、RG4AZ、RG4YZ、RG4CZ。描述及对比如下:
型号 RG4 RG4A RG4Y RG4Z RG4C RG4ZZ RG4AZ RG4YZ RG4CZ
描述 3 A, SILICON, RECTIFIER DIODE 2 A, 600 V, SILICON, RECTIFIER DIODE 3.5 A, 70 V, SILICON, RECTIFIER DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE 2 A, 1000 V, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE
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