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RGP20D

2 A, 200 V, SILICON, RECTIFIER DIODE

器件类别:分立半导体    快恢复二极管   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

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器件参数
参数名称
属性值
封装类型
Case Style
DO-15
IVA(A)
2.0
VRRM (V)
200
IFSM (A)
80
VF (V)
1.3
@IVA(A)
2.0
Maximum reverse curre
5.0
TRR(nS)
150
class
Diodes
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RGP20A-RGP20J
Fast Recovery Rectifiers
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 2.0 A
Features
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 15
Mechanical Data
Case:JEDEC DO-15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-750,Method 2026
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RGP
20A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
RGP
20B
100
70
100
RGP
20D
200
140
200
2.0
RGP
20G
400
280
400
RGP
20J
600
420
600
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
80.0
A
Maximum instantaneous forw ard voltage
@ 2.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.3
5.0
100.0
250
18
45
- 55---- + 150
- 55---- + 150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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mail:lge@luguang.cn
RGP20A-RGP20J
Fast Recovery Rectifiers
Ratings AND Charactieristic Curves
FIG.1 --REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
N.1.
10
N.1.
t
rr
+0.5A
D.U.T.
(+)
50VDC
(APPROX)
(-)
( - )
0
1
N.1.
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE2)
( + )
-0.25A
-1.0A
1cm
NOTE
S:1.RE TIM =7ns M
SE E
AX.INP IM E AN =1M
UT P D CE
Ω.22pF.
2.RE TIM =10ns M
SE E
AX.SOUR IM E
CE P DANC =500Ω.
E
SE TIM BASEFOR50/100 ns /cm
T E
FIG.2 --PEAK FORWARD SURGE VURRENT
PEAK FORWARD CURGE CURRENT
AMPERES
FIG.3--TYPICAL JUNCTION CAPACITANCE
100
180
JUNCTION CAPACITANCE,pF
100
80
60
40
T
J
=125
8.3ms Single Half
Sine-Wave
60
40
20
10
4
2
1
.1
20
T
J
=25
f=1MHz
0
1
10
100
.2
.4
1.0
2
4
10
20
40
100
NUMBER OF CYCLES AT 60Hz
FIG.4--TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT
AMPERES
100
REVERSE VOLTAGE,VOLTS
FIG.5--FORWARD CURRENT DERATING CURVE
T
J
=25
Pulse Width=300
µ
S
AVERAGE FORWARD CURRENT
AMPERES
10
2.0
1.50
1.0
1.00
0.1
0.04
0.50
S P
ingle hase
H W 60H
alf ave z
R
esistiveor
InductiveLoad
0
0
25
50
75
100
125
150
175
0.01
0
0.2 0.4 0.6 0.8 1
1.2 1.4 1.6 1.8 2
FORWARD VOLTAGE,VOLTS
AMBIENT TEMPERATURE,
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mail:lge@luguang.cn
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参数对比
与RGP20D相近的元器件有:RGP20A、RGP20B、RGP20G、RGP20J。描述及对比如下:
型号 RGP20D RGP20A RGP20B RGP20G RGP20J
描述 2 A, 200 V, SILICON, RECTIFIER DIODE 2 A, 50 V, SILICON, RECTIFIER DIODE 2 A, SILICON, RECTIFIER DIODE, DO-201AA 2 A, 400 V, SILICON, RECTIFIER DIODE 2 A, 600 V, SILICON, RECTIFIER DIODE
封装类型
Case Style
DO-15 DO-15 DO-15 DO-15 DO-15
IVA(A) 2.0 2.0 2.0 2.0 2.0
VRRM (V) 200 50 100 400 600
IFSM (A) 80 80 80 80 80
VF (V) 1.3 1.3 1.3 1.3 1.3
@IVA(A) 2.0 2.0 2.0 2.0 2.0
TRR(nS) 150 150 150 150 250
class Diodes Diodes Diodes Diodes Diodes
Maximum reverse curre 5.0 5.0 5.0 5.0 -
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