Preliminary
RJK0380DPA
Silicon N Channel Power MOS FET with Schottky Barrier Diode
REJ03G1827-0210
Power Switching
Rev.2.10
Sep 29, 2009
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 2.4 m
Ω
typ. (at V
GS
= 10 V)
•
Pb-free
•
Halogen-free
•
•
•
•
•
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
θch-C
Tch
Tstg
Ratings
30
±20
45
180
45
25
62.5
50
2.5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1827-0210 Rev.2.10 Sep 29, 2009
Page 1 of 6
RJK0380DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.4
3.3
95
3350
730
330
1.6
24
9.2
6.7
14
16
58
11.5
0.39
30
Max
—
±0.1
1
2.5
3.2
4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
mA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
=
±20
V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 22.5 A, V
GS
= 10 V
Note4
I
D
= 22.5 A, V
GS
= 4.5 V
Note4
I
D
= 22.5 A, V
DS
= 10 V
Note4
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
V
DD
= 10 V, V
GS
= 4.5 V,
I
D
= 45 A
V
GS
= 10 V, I
D
= 22.5 A,
V
DD
≅
10 V, R
L
= 0.44
Ω,
Rg = 4.7
Ω
I
F
= 2 A, V
GS
= 0
Note4
I
F
= 45 A, V
GS
= 0
di
F
/ dt = 100 A/
μs
REJ03G1827-0210 Rev.2.10 Sep 29, 2009
Page 2 of 6
RJK0380DPA
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
1000
Maximum Safe Operation Area
Pch (W)
I
D
(A)
60
100
μ
s
s
Channel Dissipation
Drain Current
40
10
1 ms
20
1
limited by R
DS(on)
0
50
100
150
200
Tc = 25°C
0.1 1 shot Pulse
0.1
1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
50
4.5 V
10 V
Pulse Test
3.0 V
2.8 V
30
2.7 V
20
50
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
I
D
(A)
Drain Current
40
40
30
Drain Current
20
25°C
Tc = 75°C
–25°C
10
V
GS
= 2.6 V
10
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
Drain to Source Saturation Voltage
V
DS (on)
(mV)
100
Pulse Test
Pulse Test
150
30
100
10
V
GS
= 4.5 V
3
10 V
1
1
50
I
D
= 20 A
10 A
5A
0
4
8
12
16
20
3
10
30
100
300 1000
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
REJ03G1827-0210 Rev.2.10 Sep 29, 2009
Page 3 of 6
RJK0380DPA
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse Test
10000
3000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Capacitance C (pF)
8
Ciss
Coss
1000
300
6
I
D
= 5 A, 10 A, 20 A
V
GS
= 4.5 V
4
Crss
100
30
10
0
V
GS
= 0
f = 1 MHz
10
20
30
2
0
–25
10 V
5 A, 10 A, 20 A
0
25
50
75
100 125 150
Case Temperature
Tc
(
°
C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
V
GS
(V)
20
50
Dynamic Input Characteristics
V
DS
(V)
50
V
GS
V
DD
= 25 V
10 V
16
Reverse Drain Current I
DR
(A)
I
D
= 45 A
Pulse Test
10 V
40
5V
40
Drain to Source Voltage
30
V
DS
20
12
Gate to Source Voltage
30
8
20
V
GS
= 0, –5 V
10
V
DD
= 25 V
10 V
0
20
40
60
80
4
10
0
0
100
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg (nc)
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
100
I
AP
= 25 A
V
DD
= 15 V
duty < 0.1 %
Rg
≥
50
Ω
80
60
40
20
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
REJ03G1827-0210 Rev.2.10 Sep 29, 2009
Page 4 of 6
RJK0380DPA
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
Preliminary
D=1
0.5
0.3
0.2
0.1
0.1
θch
– c (t) =
γ
s (t) •
θch
– c
θch
– c = 2.5°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.05
0.03
2
0.0
lse
1
t pu
0.0
ho
1s
0.01
10
μ
100
μ
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D. U. T
I
D
Vin
15 V
50
Ω
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 10 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
REJ03G1827-0210 Rev.2.10 Sep 29, 2009
Page 5 of 6
微控制器 MCU
