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RL106

Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, A-405, 2 PIN

器件类别：分立半导体    二极管   

厂商名称：Microsemi

厂商官网：https://www.microsemi.com

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
Microsemi
包装说明
O-XALF-W2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
METALLURGICALLY BONDED
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.1 V
JESD-30 代码
O-XALF-W2
JESD-609代码
e0
最大非重复峰值正向电流
50 A
元件数量
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-65 °C
最大输出电流
1 A
封装主体材料
UNSPECIFIED
封装形状
ROUND
封装形式
LONG FORM
认证状态
Not Qualified
最大重复峰值反向电压
800 V
最大反向恢复时间
2 µs
表面贴装
NO
端子面层
TIN LEAD
端子形式
WIRE
端子位置
AXIAL
文档预览
21201 Itasca St.
Chatsworth, CA 91311
Phone: (818) 701-4933
Fax: (818) 701-4939
RL101
thru
RL107
1 Amp Rectifier
50 - 1000 Volts
Features
•
•
•
•
Low Current Leakage
Metallurgical Bonded Construction
Low Cost
Smaller Lead Diameter For Radial Applications
Maximum Ratings
•
•
•
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Maximum Thermal Resistance; 50°C/W Junction To Lead
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
A-405
Microsemi
Part Number
RL101
RL102
RL103
RL104
RL105
RL106
RL107
Maximum
RMS Voltage
35V
70V
140V
280V
420V
560V
700V
D
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
I
F(AV)
1.0A
T
A
= 75°C
Current
Peak Forward Surge
I
FSM
30A
8.3ms, half sine
Current
Maximum
1.1V
I
FM
= 1.0A;
Instantaneous
V
F
Forward Voltage
T
J
= 25°C*
Maximum DC
Reverse Current At
I
R
5.0µA
T
J
= 25°C
Rated DC Blocking
50µA
T
J
= 125°C
Voltage
Typical Junction
C
J
15pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
C
DIMENSIONS
INCHES
MIN
.166
.080
.021
1.000
MM
MIN
4.10
2.00
.54
25.40
DIM
A
B
C
D
MAX
.205
.107
.025
---
MAX
5.20
2.70
.64
---
NOTE
RL101 thru RL107
Figure 1
Typical Forward Characteristics
20
10
6
4
1.0
2
Amps
1
.6
.4
.2
25°C
.1
.06
.04
.02
.01
.4
.6
.8
Volts
Instantaneous Forward Current - Amperes
versus
Instantaneous Forward Voltage - Volts
1.0
1.2
1.4
0
.2
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
50
75
100
°C
Average Forward Rectified Current - Amperes
versus
Ambient Temperature -
°C
125
150
175
Amps
.4
.8
1.2
Figure 2
Forward Derating Curve
.6
Figure 3
Junction Capacitance
100
60
40
20
pF
10
6
4
2
1
.1
.2
.4
1
Volts
2
4
10
20
40
100
200
400
1000
T
J
=25°C
Junction Capacitance - pF
versus
Reverse Voltage - Volts
RL101 thru RL107
Figure 4
Typical Reverse Characteristics
100
60
40
20
10
6
4 T =100°C
A
2
µAmps
1
.6
.4
.2
.1
.06
.04
.02
.01
20
40
60
80
Volts
Instantaneous Reverse Leakage Current - MicroAmperes
versus
Percent Of Rated Peak Reverse Voltage - Volts
100
120
140
T
A
=25°C
Amps
60
50
40
30
20
10
0
1
2
4
6
8 10 20
Cycles
Peak Forward Surge Current - Amperes
versus
Number Of Cycles At 60Hz - Cycles
40
60 80 100
Figure 5
Peak Forward Surge Current
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参数对比
与RL106相近的元器件有：RL104、RL103、RL102。描述及对比如下：
型号 RL106 RL104 RL103 RL102
描述 Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, A-405, 2 PIN Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, A-405, 2 PIN Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, A-405, 2 PIN Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, A-405, 2 PIN
厂商名称 Microsemi Microsemi Microsemi Microsemi
包装说明 O-XALF-W2 A-405, 2 PIN A-405, 2 PIN O-XALF-W2
针数 2 2 2 2
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
其他特性 METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) 1.1 V 1.1 V 1.1 V 1.1 V
JESD-30 代码 O-XALF-W2 O-XALF-W2 O-XALF-W2 O-XALF-W2
JESD-609代码 e0 e0 e0 e0
最大非重复峰值正向电流 50 A 50 A 50 A 50 A
元件数量 1 1 1 1
端子数量 2 2 2 2
最高工作温度 175 °C 175 °C 175 °C 175 °C
最低工作温度 -65 °C -65 °C -65 °C -65 °C
最大输出电流 1 A 1 A 1 A 1 A
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 800 V 400 V 200 V 100 V
最大反向恢复时间 2 µs 2 µs 2 µs 2 µs
表面贴装 NO NO NO NO
端子面层 TIN LEAD TIN LEAD TIN LEAD TIN LEAD
端子形式 WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL
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