RM25C64C
64Kbit 2.7V Minimum
Non-volatile Serial Memory
SPI Bus
Features
Memory array: 64Kbit EEPROM-compatible serial memory
Single supply voltage: 2.7V - 3.6V
Serial peripheral interface (SPI) compatible
Supports SPI modes 0 and 3
1.6MHz maximum clock rate for normal read
5MHz maximum clock rate for fast read
Page size: 32 byte
-Byte and Page Write from 1 to 32 bytes
-Byte Write within 25µs
-Page Write within 1ms
Self-timed erase and write cycles
Page or chip erase capability
1mA read current, 1.5mA write current, 5µA power-down current
8-lead packages
RoHS-compliant and halogen-free packaging
Based on Adesto's proprietary CBRAM
®
technology
Data Retention: 10 years
Endurance: 25,000 Write Cycles
Unlimited Read Cycles
Description
The Mavriq
™
RM25C64C is an EEPROM-compatible, 64Kbit non-volatile serial
memory utilizing Adesto's CBRAM resistive memory technology. The memory device
uses a single low-voltage supply ranging from 2.7V to 3.6V.
The RM25C64C is accessed through a 4-wire SPI interface consisting of a Serial Data
Input (SDI), Serial Data Output (SDO), Serial Clock (SCK), and Chip Select (CS). The
maximum clock (SCK) frequency in normal read mode is 1.6MHz. In fast read mode
the maximum clock frequency is 5MHz.
Writing into the device can be done from one to 32 bytes at a time. All writing is
internally self-timed. The device also features an Erase which can be performed on
32-byte pages, or the whole chip. Writing a single byte to the Mavriq RM25C32C
device consumes only 10% of the energy required by a Byte Write operation of
EEPROM devices of similar size.
DS-RM25C64C–064F–1/2018
1.
Block Diagram
VCC
Status
Registers
&
Control
Logic
I/O Buffers and Data
Latches
Page Buffer
SCK
SDI
SDO
CS
WP
HOLD
Y-Decoder
SPI
Interface
GND
Address
Latch
&
Counter
X-Decoder
64Kb
CBRAM
Memory
Figure 1-1. Block Diagram
RM25C64C
DS-RM25C64C–064F–1/2018
2
2.
Absolute Maximum Ratings
Table 2-1.
Parameter
Operating ambient temp range
Storage temperature range
Input supply voltage, VCC to GND
Voltage on any pin with respect to GND
ESD protection on all pins (Human Body Model)
Junction temperature
DC output current
Absolute Maximum Ratings
(1)
Specification
0°C to +70° C
-20°C to +100°C
- 0.3V to 3.6V
-0.3V to (VCC + 0.3)
>2kV
85°C
5mA
1. CAUTION: Stresses greater than Absolute Maximum Ratings may cause permanent damage to the devices. These
are stress ratings only, and operation of the device at these, or any other conditions outside those indicated in other
sections of this specification, is not implied. Exposure to absolute maximum rating conditions for extended periods
may reduce device reliability
RM25C64C
DS-RM25C64C–064F–1/2018
3
3.
3.1
Electrical Characteristics
DC Operating Characteristics
Applicable over recommended operating range: TA = 0°C to +70° C, VCC = 2.7V to 3.6V
Symbol
Parameter
Condition
Min
Typ
Max
Units
V
CC
Supply Range
VCC Inhibit
Supply current, Fast
Read
V
CC
= 3.6V SCK at 5 MHz
SDO = Open, Read
V
CC
= 3.6V SCK at 1.6 MHz
SDO = Open, Read
2.7
3.6
2.4
V
V
V
VCCI
I
CC1
1.2
3
mA
I
CC2
Supply Current,
Read Operation
1
2
mA
I
CC3
I
CC4
I
CC5
I
IL
I
LO
V
IL
V
IH
V
OL
V
OH
Supply Current,
Program or Erase
Supply Current,
Standby
Supply Current,
Power Down
Input Leakage
Output Leakage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
CC
= 3.6V SCK at 5 MHz
V
CC
= 3.6V CS = V
CC
V
CC
= 3.6V Power Down
SCK, SDI,
CS
,
HOLD
,
WP
V
IN
=
0V to V
CC
SDO ,
CS
=
V
CC
V
IN
=
0V to V
CC
SCK, SDI,
CS
,
HOLD
,
WP
SCK, SDI,
CS
,
HOLD
,
WP
I
OL
= 3.0mA
I
OH
= -100µA
V
CC
- 0.2
-0.3
V
CC
x 0.7
1.5
100
5
3
200
20
1
1
V
CC
x 0.3
V
CC
+ 0.3
0.4
mA
µA
µA
µA
µA
V
V
V
V
RM25C64C
DS-RM25C64C–064F–1/2018
4
3.2
AC Operating Characteristics
Applicable over recommended operating range: TA = 0°C to +70° C, VCC = 2.7V to 3.6V
Symbol
f
SCKF
f
SCK
t
RI
t
FL
t
SCKH
t
SCKL
t
CS
t
CSS
t
CSH
t
DS
t
DH
t
HS
t
HD
t
OV
t
OH
t
LZ
t
HZ
t
DIS
t
PW
t
BP
t
PUD
t
RPD
C
IN
C
OUT
Parameter
SCK Clock Frequency for Fast Read Mode
SCK Clock Frequency for Normal Read Mode
SCK Input Rise Time
SCK Input Fall Time
SCK High Time
SCK Low Time
CS High Time
CS Setup Time
CS Hold Time
Data In Setup Time
Data In Hold Time
HOLD Setup Time
HOLD Hold Time
Output Valid
Output Hold Time Normal Mode
HOLD to output Low Z
HOLD to output High Z
Output Disable Time
Page Write Cycle Time
Byte Write Cycle Time
V
cc
Power-up Delay
(1)
Return from Power-Down Time
SCK, SDI,
CS
,
HOLD
,
WP
V
IN
=
0V
SDO V
IN
=
0V
25000
(2)
Endurance
Unlimited
(3)
Retention
50
6
8
1
25
0
0
200
200
100
3
100
75
7.5
7.5
100
10
10
4
4
30
30
6.5
Min
0
0
Typ
Max
5
1.6
1
1
Units
MHz
MHz
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
µs
µs
µs
pf
pf
Write
Cycles
Read
Cycles
Years
70C
10
Notes: 1. VCC must be within operating range.
2. Adesto memory products based on CBRAM technology are “Direct‐Write” memories. Endurance cycle calculations follow
JEDEC specification JESD22‐A117B.
3.
Subject to expected 10‐year data retention specification.
RM25C64C
DS-RM25C64C–064F–1/2018
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模拟电子
