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RS1002

10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:辰颐电子

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RS10 SERIES
SINGLE PHASE SILICON BRIDGE
RECTIFIERS
CHENG- YI
ELECTRONIC
VOLTAGE RANGE
50 TO 1000 VOLTS
CURRENT
10 Amperes
0
FEATURES
Ideal for printed circuit board
Realiable low cost construction utilizing
molded plastic technique
Plastic material has underwriters laboratory
Flammibility Classification 94V-0
Surge overload rating:200 amperes peak
Mounting position:Any
Mounting Torgue: 5 In. lb. max
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
0
C ambient temperature unless otherwise specified.
Resistive or inductive load, 60 Hz. For capacitive load, derate current by 20%.
RS10005
RS1001
100
70
100
RS1002
200
140
200
RS1004
400
280
400
10
RS1006
600
420
600
RS1008
800
560
800
RS1010
1000
700
1000
UNITS
V
V
V
A
A
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward @
TC=100 C
Rectified Output Current
@
TA=65 C
0
0
V
RRM
V
RMS
V
DC
V
(AV)
50
35
50
Peak Forward Surge Current,
8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantanous Forward Voltage Drop Per
Element at 10.0A
Maximum Reverse Leakage at rated
@ TA=25 C
DC Block Voltage Per Element
@ TC=100 C
0
0
I
FSM
240
A
V
F
I
R
T
J
T
STG
1.1
10
100
-65 to +150
-65 to +150
V
A
mA
0
Operating Temperature Range
Storage Temperature Range
C
C
0
Notes:1.Thermal Resistance Junction to Case per diode.
RS10 SERIES
SINGLE PHASE SILICON BRIDGE
RECTIFIERS
CHENG- YI
ELECTRONIC
RATING AND CHARACTERISTICS CURVES
RS10 SERIES
Fig.1
-
DERATING CURVE
OUTPUT RECTIFIED CURRENT
AVERAGE FORWARD CURRENT.(A)
12
10
8
6
4
2
0
50
100
HEAT-SINK
MOUNTING
Fig.2
-
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT. (A)
MOUNTED ON 4x4 INCH
COPER PC BOARD
0.5"(12.7mm)LEAD LENGTH
40
20
10
4.0
150
TJ=25
0
C
TEMPERATURE,
0
C
Pulse Width=300 s
1.0
0.4
0.2
0.1
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Fig.4
-
TYPICAL REVERSE
CHARACTERISTICS
10
INSTANTANEOUS REVERSE
CURRENT, MICROAMPERES
0 0
TTC=100C
C=100C
INSTANTANEOUS FORWARD VOLT
AGE, (V)
1.0
0.1
350
TA=25
0
C
Fig.4
-
MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
.01
0
20
40
60
80
100
120
140
PEAK FORWARD SURGE CURRENT
AMPERES
300
250
0
TJ=150C
8.3ms Single Half Sine Wave
PERCENT OF PEAK REVERSE VOLT
AGE
200
150
Fig.5 - TYPICAL JUNCTION CAPACIT
ANCE
PER ELEMENT
400
100
50
0
CAPACITANCE, pF
100
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60 Hz
50
10
1
5
10
50
100
REVERSE VOLTAGE, VOLTS
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参数对比
与RS1002相近的元器件有:RS10、RS10005、RS1001、RS1004、RS1006、RS1008、RS1010。描述及对比如下:
型号 RS1002 RS10 RS10005 RS1001 RS1004 RS1006 RS1008 RS1010
描述 10 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 10 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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