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RS2KAF

快恢复二极管, 2.0A, 800V, 50A, 1.3V, 2.0A, 5.0μA, 500nS

器件类别:分立半导体    快恢复二极管   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

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器件参数
参数名称
属性值
封装类型
Case Style
SMAF
IVA(A)
2.0
VRRM (V)
800
IFSM (A)
50
VF (V)
1.3
@IVA(A)
2.0
Maximum reverse current
5.0
TRR(nS)
500
class
Diodes
文档预览
RS2AFA--RS2MFA
FEATURES
Low profile package
For surface mounted applications
Built-in strain relief, ideal for automated placement
Plastic package has underwriters, laborator flammability classification 94V-0
High temperature soldering: 250 C/10 seconds at terminals
o
0.110(2.80)
0.094(2.40)
SMAF
Cathode Band
Top View
0.059(1.50)
0.051(1.30)
0.145(3.70)
0.128(3.25)
0.059(1.50)
0.039(1.00)
0.012(0.30)
0.004(0.10)
MECHANICAL DATA
Case :JEDEC SMAFL, molded plastic over
,passivated
chip
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: color band denotes cathode end
0.047(1.20)
0.028(0.60)
Marking Information
0.190(4.85)
0.172(4.35)
Dimensions in inches and (millimeters)
XXXX
Characteristic
Marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
LGE:Lu Guang Electronic
XXXX:marking code (RS2A-RS2M)
Symbol
RS2AFA
R2A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
RS2BFA
R2B
100
70
100
RS2DFA
R2D
200
140
200
RS2GFA
R2G
400
280
400
2.0
RS2JFA
R2J
600
420
600
RS2KFA
R2K
800
560
800
RS2MFA
UNITS
R2M
1000
700
1000
V
V
V
A
Maximum Ratings
(@TA = 25° unless otherwise specified)
C
Maximum average forward rectified current
T
L
=90℃
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
I
FSM
50
A
Thermal Characteristics
Characteristic
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
R
ΘJL
Opera tingjunction and storage temperature range
T
J
T
STG
15
- 55 ------ + 150
Symbol
C
J
R
ΘJA
RS2AFA
RS2BFA
RS2DFA
RS2GFA
18
40
RS2JFA
RS2KFA
RS2MFA
UNITS
pF
℃/W
Electrical Characteristics
(@TA = 25° unless otherwise specified)
C
Characteristic
Maximum instantaneous forward voltage at2.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=125℃
t
rr
150
Symbol
V
F
I
R
200
250
500
ns
RS2AFA
RS2BFA
RS2DFA
RS2GFA
1.30
5.0
RS2JFA
RS2KFA
RS2MFA
UNITS
V
μ
A
Typical reverse recovery time (Note1)
NOTE: 1.Reverse recovery time test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
2. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
3. Thermal resistance from junction to ambient and junction to lead P.C.B. mounted on 0.2''X0.2''(5.0X5.0mm2) copper pad areas
Revision:20170701-P1
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RS2AFA--RS2MFA
Revision:20170701-P1
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www.lgesem i
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mail:lge@lgesemi.com
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参数对比
与RS2KAF相近的元器件有:RS2BAF、RS2MAF、RS2GAF、RS2JAF、RS2AAF、RS2DAF。描述及对比如下:
型号 RS2KAF RS2BAF RS2MAF RS2GAF RS2JAF RS2AAF RS2DAF
描述 快恢复二极管, 2.0A, 800V, 50A, 1.3V, 2.0A, 5.0μA, 500nS 快恢复二极管, 2.0A, 100V, 50A, 1.3V, 2.0A, 5.0μA, 150nS 快恢复二极管, 2.0A, 1000V, 50A, 1.3V, 2.0A, 5.0μA, 500nS 快恢复二极管, 2.0A, 400V, 50A, 1.3V, 2.0A, 5.0μA, 150nS 快恢复二极管, 2.0A, 600V, 50A, 1.3V, 2.0A, 5.0μA, 250nS 快恢复二极管, 2.0A, 50V, 50A, 1.3V, 2.0A, 5.0μA, 150nS Fast Recovery Diode, Case Style : SMAF; IAV (A) : 2.0; VRRM (V) : 200; IFSM (A) : 50; VF (V) : 1.3; @IAV (A): 2.0; IR (µA) TA=25ºC: 5.0; TRR (nS): 150
封装类型
Case Style
SMAF SMAF SMAF SMAF SMAF SMAF -
IVA(A) 2.0 2.0 2.0 2.0 2.0 2.0 -
VRRM (V) 800 100 1000 400 600 50 -
IFSM (A) 50 50 50 50 50 50 -
VF (V) 1.3 1.3 1.3 1.3 1.3 1.3 -
@IVA(A) 2.0 2.0 2.0 2.0 2.0 2.0 -
Maximum reverse current 5.0 5.0 5.0 5.0 5.0 5.0 -
TRR(nS) 500 150 500 150 250 150 -
class Diodes Diodes Diodes Diodes Diodes Diodes -
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