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RSFKL

Rectifier Diode, 1 Element, 0.5A, 1000V V(RRM), Silicon, DO-219AA, LEAD FREE, PLASTIC PACKAGE-2

器件类别:分立半导体    二极管   

厂商名称:Fagor Electrónica

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Fagor Electrónica
零件包装代码
DO-219AA
包装说明
LEAD FREE, PLASTIC PACKAGE-2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-219AA
JESD-30 代码
R-PDSO-F2
JESD-609代码
e3
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
0.5 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
1000 V
最大反向恢复时间
0.5 µs
表面贴装
YES
端子面层
TIN
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
RSFDL........RSFML
0.5 Amp. Surface Mounted Glass Passivated Fast Recovery Rectifier
Dimensions in mm.
CASE:
M1F (DO219AA)
Voltage
200 to 1000 V
Current
0.5 A
R
• For surface mounted application
• Glass Passivated junction chip
• High temperature metallurgically bonded
construction
• Plastic material used carries Underwriters
Laboratory Classification 94V-0
• Fast switching for high efficiency
• High temperature soldering:
260 °C / 10 seconds at terminals
MECHANICAL DATA
• Cases: Sub SMA plastic case
• 
Terminals: Pure tin plated, Lead free.
• 
Polarity: Indicated by cathode band
• 
Packaging: 12 mm tape per EIA STD
XXX = Marking code
WW = Week code
Y = Year code
RS-481
• 
Weight: 15 mg
Maximun Ratings and Electrical Characteristics at 25 °C
RSFDL
Marking Code
RSD
200
140
200
RSFGL
RSG
400
280
400
RSFJL
RSJ
600
420
600
0.5 A
10 A
30 µA
1.3 V
5 µA
50 µA
150 nS
250 nS
4.0 pF
5 mJ
150 °C/W
32 °C/W
-55 to + 150 °C
-55 to + 150 °C
7 mJ
500 nS
RSFKL
RSK
800
560
800
RSFML
RSM
1000
700
1000
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
R
V
F
I
R
T
rr
C
j
E
RSM
R
th (j-a)
R
th (j-l)
T
j
T
stg
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum average Forward Rectified Current
See Fig. 1 at T
L
= 55 °C
Peak Forward Surge Current 8.3 ms Single
Half Sine-Wave Superimposed on Rated Load
(JEDEC Method)
Maximum Full Load Reverse Current, Full cycle
Average T
A
= 55 °C
Maximum Instantaneous Forward Voltage at 0.5 A
Maximum DC Reverse Current @ T
A
= 25 °C
at Rated DC Blocking Voltage @ T
A
= 125 °C
Maximum Reverse Recovery Time (0.5/1/0.25A)
Typical Junction Capacitance (1MHz; -4V)
Non-repetitive Peak Reverse Avalanche
Energy L = 120 mH max prior to Surge,
Inductive load Switched off
Typical Thermal Resistance
(5x5 mm
2
Copper Pad Areas)
Operating Temperature Range
Storage Temperature Range
Jul - 11
RSFDL........RSFML
Rating And Characteristic Curves
MAXIMUM FORWARD CURRENT
DERATING CURVE
I
F(AV)
, average forward current (A)
RESISTIVE OR
INDUCTIVE LOAD
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS PER LEG
I
F
, instantaneous forward current (A)
30
10
0.6
0.5
0.4
0.3
0.2
0.1
0
1
T
j
= 25 °C
0.1
Pulse Width=300 µs
1% Duty Cycle
P.C.B. Mounted on 5x5mm
Copper Pad Areas
0 20 40 60 80 100 120 140 160 180
0.01
0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
Lead temperature (ºC)
MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
10
V
F
, forward voltage (V)
TYPICAL JUNCTION CAPACITANCE
10
T
j
= 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
I
FSM
, peak forward current (A)
8
6
4
2
0
C
j
, junction capacitance (pF)
100
1
8.3ms Single Half Sine Wave
(JEDEC Method) at T
L
=90 °C
1
10
1
10
100
Number of cycles at 60 Hz
V
R
, reverse voltage (V)
TYPICAL REVERSE CHARACTERISTICS
I
R
, instantaneous reverse current (mA)
30
10
REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NON INDUCTIVE
10W
NON INDUCTIVE
+0.5A
(-)
PULSE
GENERATOR
(NOTE 2)
OSCILLOSCOPE
(NOTE 1)
(+)
trr
DUT
1
T
j
= 100 ºC
(+)
50vDC
(APPROX)
(-)
0
-0.25A
0.1
T
j
= 25 ºC
1W
NON
INDUCTIVE
-1.0A
NOTES: 1. Rise Time = 7ns max. Input Impedance =
1 megohm 22 pf
2. Rise Time = 10 ns max. Sourse Impedance =
50 ohms
1cm
SET TIME BASE FOR
5/ 10ns/ cm
0.01
0.001
0
20
40
60
80
100
Percent of rated peak
reverse voltage (%)
Jul - 11
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参数对比
与RSFKL相近的元器件有:RSFML、RSFDL、RSFJL、RSFGL。描述及对比如下:
型号 RSFKL RSFML RSFDL RSFJL RSFGL
描述 Rectifier Diode, 1 Element, 0.5A, 1000V V(RRM), Silicon, DO-219AA, LEAD FREE, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 0.5A, 1000V V(RRM), Silicon, DO-219AA, LEAD FREE, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 0.5A, 1000V V(RRM), Silicon, DO-219AA, LEAD FREE, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 0.5A, 1000V V(RRM), Silicon, DO-219AA, LEAD FREE, PLASTIC PACKAGE-2 Rectifier Diode, 1 Element, 0.5A, 1000V V(RRM), Silicon, DO-219AA, LEAD FREE, PLASTIC PACKAGE-2
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合
零件包装代码 DO-219AA DO-219AA DO-219AA DO-219AA DO-219AA
包装说明 LEAD FREE, PLASTIC PACKAGE-2 LEAD FREE, PLASTIC PACKAGE-2 R-PDSO-F2 LEAD FREE, PLASTIC PACKAGE-2 LEAD FREE, PLASTIC PACKAGE-2
针数 2 2 2 2 2
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 DO-219AA DO-219AA DO-219AA DO-219AA DO-219AA
JESD-30 代码 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
JESD-609代码 e3 e3 e3 e3 e3
元件数量 1 1 1 1 1
端子数量 2 2 2 2 2
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 1000 V 1000 V 1000 V 1000 V 1000 V
最大反向恢复时间 0.5 µs 0.5 µs 0.5 µs 0.5 µs 0.5 µs
表面贴装 YES YES YES YES YES
端子面层 TIN Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
端子形式 FLAT FLAT FLAT FLAT FLAT
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
厂商名称 Fagor Electrónica - Fagor Electrónica Fagor Electrónica Fagor Electrónica
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