ＲＴ１Ｎ２４０Ｘ SERIES
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT1N240X is a one chip transistor
with built-in bias resistor,PNP type is RT1P240X.
RT1N240U
1.6
OUTLINE
DRAWING
RT1N240C
2.5
UNIT：mm
FEATURE
・Built-in bias resistor (R1=22kΩ) .
0.5
0.4
0.8
0.4
0.5
1.5
0.5
0.3
①
②
③
0.95
①
②
③
2.9
1.90
1.6
1.0
APPLICATION
Inverted circuit,switching circuit,interface circuit,
driver circuit.
0.7
0.15
1.1
0.55
0.8
0.16
0∼0.1
R1
B
(IN)
C
(OUT)
JEITA：−
JEDEC：−
Terminal Connector
①：Base
②：Emitter
③：Collector
RT1N240M
2.1
0.425
1.25
0.425
JEITA：SC-59
JEDEC：Similar to TO-236
Terminal Connector
①：Base
②：Emitter
③：Collector
RT1N240S
4.0
E
(GND)
0.65
0.3
3.0
0∼0.1
Equivalent circuit
0.95
0.5
①
②
③
2.0
1.3
14.0
1.0
1.0
0.1
0.45
0.65
1.27 1.27
0.9
0.15
0.4
2.5
①
②
③
0.7
JEITA：SC-70
JEDEC：−
Terminal Connector
①：Base
②：Emitter
③：Collector
0∼0.1
JEITA：−
JEDEC：−
Terminal Connector
①：Emitter
②：Collector
③：Base
ISAHAYA ELECTRONICS CORPORATION
0.4
ＲＴ１Ｎ２４０Ｘ SERIES
MAXIMUM RATING (Ta=25℃)
SYMBOL
Ｖ
ＣＢＯ
Ｖ
ＥＢＯ
Ｖ
ＣＥＯ
Ｉ
Ｃ
Ｉ
ＣＭ
Ｐ
Ｃ
Ｔ½
Ｔ½½½
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
RT1N240U
RT1N240M
RT1N240C
50
6
50
100
200
150 200
+150
+150
-55∼+150
-55∼+150
〈Transistor〉
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
RT1N240S
UNIT
V
V
V
mA
mA
mW
℃
℃
LIMIT
TYP
450
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
Ｖ
（ＢＲ）ＣＥＯ
Ｉ
ＣＢＯ
½
ＦＥ
Ｖ
ＣＥ（½½½）
Ｒ
１
½
Ｔ
PARAMETER
C to E break down voltage
Collector cut off current
DC forward current gain
C to E saturation voltage
Input resistance
Gain band width product
TEST CONDITION
I
C
=100 μ
A，R
BE
=∞
V
CB
=50V，I
E
=0
V
CE
=5V，I
C
=1mA
I
C
=10mA，I
B
=0.5mA
V
CE
=6V，I
E
MIN
50
100
15
MAX
0.1
0.3
29
UNIT
V
μ
A
−
V
kΩ
MHz
=-10mA
22
200
TYPICAL CHARACTERISTICS
IN P U T ON V OL TA GE
V S. C OL L EC TOR C U R R EN T
D C F OR W A R D C U R R EN T GA IN
V S. C OL L EC TOR C U R R EN T
10
DC FORWARD CURRENT GAIN ½
ＦＥ
INPUT ON VOLTEGE Ｖ
I(ON)
（Ｖ）
1000
V
CE
=0.2V
V
CE
=5V
1
100
0.1
1
10
COLLECTOR CURRENT Ｉ
Ｃ
（½Ａ）
C OL L EC TOR C U R R EN T
V S. IN P U T OF F V OL TA GE
10
100
1
10
COLLECTOR CURRENT Ｉ
Ｃ
（½Ａ）
100
1000
COLLECTOR CURRENT Ｉ
Ｃ
（μＡ）
V
CE
=5V
100
10
0
0.4
0.8
1.2
1.6
INPUT OFF VOLTAGE Ｖ
Ｉ（ＯＦＦ）
（Ｖ）
2
ISAHAYA ELECTRONICS CORPORATION
http://www.idc-com.co.jp
6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN
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・
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but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury,
fire or property damage.Remember to give consideration to safety when making your circuit designs, with appropriate measures
such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction
or mishap.
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Isahaya Electronics Corporation assumes no responsibility for any damage, or infringement of any third-party rights, originating
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・ information contained in these materials, including product data, diagrams and charts, represent information on products at
All
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