CCD area image sensor
S13240/S13241 series
S10140/S10141 series (-01)
Low readout noise, high resolution
(pixel size: 12 µm)
The S13240/S13241 series and S10140/S10141 series (-01) are back-thinned FFT-CCD area image sensors developed for low-light-
level detection. By using the binning operation, they can be used as a linear image sensor having a vertically long photosensitive
area. This makes them suited for use in spectrophotometry. The binning operation offers significant improvement in S/N and signal
processing speed compared with conventional methods by which signals are digitally added by an external circuit. These products
feature low noise and low dark current (MPP mode operation). This allows low-light-level detection by making the integration
time longer. And, wide dynamic range has been achieved by increasing the saturation charge than that of the previous product
(S10140/S10141 series).
The S13240/S13241 series is a high-speed readout type, and the S10140/S10141 series (-01) is a low noise type. These prod-
ucts have an pixel size of 12 × 12 µm and are available in the photosensitive area ranging from 24.576 (H) × 1.464 (V) mm
2
(2048 × 122 pixels) to 24.576 (H) × 6.072 (V) mm
2
(2048 × 506 pixels).
Features
Wide dynamic range
Low readout noise: 4 e
-
rms typ. [S10140/S10141 series (-01)]
30 e
-
rms typ. (S13240/S13241 series)
High resolution: pixel size 12 × 12 µm
Non-cooled type: S13240 series, S10140 series (-01)
One-stage TE-cooled type: S13241 series, S10141 series (-01)
Quantum efficiency: 90% or higher at peak
Wide spectral response range
MPP operation
High UV sensitivity and stable characteristics under UV
light irradiation
Pin compatible with the S7030/S7031 series
[S10140/S10141 series (-01)]
Applications
Fluorescence spectrophotometry, ICP
Industrial product inspection
Semiconductor inspection
DNA sequencer
Low-light-level detection
Raman spectroscopy
Selection guide
Type no.
S13240-1107
S13240-1108
S13240-1109
S13241-1107S
S13241-1108S
S13241-1109S
S10140-1107-01
S10140-1108-01
S10140-1109-01
S10141-1107S-01
S10141-1108S-01
S10141-1109S-01
Cooling
Readout speed
max.
(MHz)
10
Total number of
pixels
(H) × (V)
2068 × 128
2068 × 256
2068 × 512
2068 × 128
2068 × 256
2068 × 512
2068 × 128
2068 × 256
2068 × 512
2068 × 128
2068 × 256
2068 × 512
Number of
effective pixels
(H) × (V)
2048 × 122
2048 × 250
2048 × 506
2048 × 122
2048 × 250
2048 × 506
2048 × 122
2048 × 250
2048 × 506
2048 × 122
2048 × 250
2048 × 506
Image size
mm (H) × mm (V)
24.576
24.576
24.576
24.576
24.576
24.576
24.576
24.576
24.576
24.576
24.576
24.576
×
×
×
×
×
×
×
×
×
×
×
×
1.464
3.000
6.072
1.464
3.000
6.072
1.464
3.000
6.072
1.464
3.000
6.072
Suitable
multichannel
detector head
-
Non-cooled
One-stage TE-cooled
10
-
Non-cooled
0.5
C10150-01
One-stage TE-cooled
0.5
C10151-01
Note: S10142 series (-01) [Two-stage TE-cooled type] is available upon request (made-to-order products).
www.hamamatsu.com
1
CCD area image sensor
S13240/S13241 series, S10140/S10141 series (-01)
Structure
Parameter
Pixel size (H × V)
Vertical clock
Horizontal clock
Output circuit
Package
Window material*
1
S13241 series
S10140 series (-01) S10141 series (-01)
12 × 12 µm
2-phase
2-phase
Two-stage MOSFET source follower
One-stage MOSFET source follower
24-pin ceramic DIP
2
Quartz glass*
AR-coated sapphire*
3
Quartz glass*
2
AR-coated sapphire*
3
S13240 series
*1:
Temporary window type (ex. S13240-1107N) can also be provided.
*2:
Resin sealing
*3:
Hermetic sealing
Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
4
Operating temperature*
Topr
-50
-
+50
°C
Storage temperature
Tstg
-50
-
+70
°C
S13240/S13241
-0.5
-
+20
Output transistor series
V
OD
V
drain voltage
S10140/S10141
-0.5
-
+25
series (-01)
Reset drain voltage
V
RD
-0.5
-
+18
V
Output amplifier
S13240/S13241
Vret
-0.5
-
+18
V
return voltage
series
Horizontal input source voltage
V
ISH
-0.5
-
+18
V
Vertical input gate voltage
V
IG1V
, V
IG2V
-11
-
+15
V
Horizontal input gate voltage
V
IG1H
, V
IG2H
-11
-
+15
V
Summing gate voltage
V
SG
-11
-
+15
V
Output gate voltage
V
OG
-11
-
+15
V
Reset gate voltage
V
RG
-11
-
+15
V
Transfer gate voltage
V
TG
-11
-
+15
V
Vertical shift register clock voltage
V
P1V
, V
P2V
-11
-
+15
V
Horizontal shift register clock voltage
V
P1H
, V
P2H
-11
-
+15
V
5
Soldering conditions*
Tsol
260 °C, within 5 s, at least 2 mm away from lead roots
-
Maximum current of built-in
Imax
-
-
3.0
A
TE-cooler*
6
Maximum voltage of built-in TE-cooler
Vmax
-
-
3.6
V
Maximum temperature of heat
-
-
-
70
°C
radiation side
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the prod-
uct within the absolute maximum ratings.
*4:
Package temperature [S13240 series, S10140 series (-01)], chip temperature [S13241 series, S10141 series (-01)]
*5:
Use a soldering iron.
*6:
When the current value exceeds Imax, the heat absorption begins to decrease due to the Joule heat. This maximum current Imax
is not the threshold for damaging the thermoelectric cooler. To protect the thermoelectric cooler and maintain stable operation, the
supply current should be less than 60% of this maximum current.
2
CCD area image sensor
S13240/S13241 series, S10140/S10141 series (-01)
Operating conditions (MPP mode, Ta=25 °C)
Parameter
Symbol
S13240/S13241 series
Min.
Typ.
Max.
14
16
18
15
16
17
3
5
7
-
0
-
-
4
5
-
V
RD
-
-10
-10
-9
-9
-
-
S10140/S10141 series (-01)
Min.
Typ.
Max.
20
22
24
14
15
16
3
5
7
-
0
-
-
-10
-10
V
RD
-9
-9
-
-
-
5
V
-8
9
V
-5
9
V
-5
10
V
-4
5
V
-8
24
kΩ
from the sensor.
V
Unit
V
V
V
V
V
Output transistor drain voltage
V
OD
Reset drain voltage
V
RD
Output gate voltage
V
OG
Substrate voltage
V
SS
Output amplifier return voltage*
7
Vret
Input source
V
ISH
Ve r t i c a l i n p u t
V
IG1V
, V
IG2V
gate
Test point
Horizontal input
V
IG1H
, V
IG2H
gate
High V
P1VH
, V
P2VH
Vertical shift register clock voltage
Low V
P1VL
, V
P2VL
High V
P1HH
, V
P2HH
Horizontal shift register clock voltage
Low V
P1HL
, V
P2HL
High
V
SGH
Summing gate voltage
Low
V
SGL
High
V
RGH
Reset gate voltage
Low
V
RGL
High
V
TGH
Transfer gate voltage
Low
V
TGL
External load resistance
R
L
*7:
Output amplifier return voltage is a positive voltage with
1
3
5
1
3
-10
-9
-8
-10
-9
5
7
9
5
7
-9
-7
-5
-9
-7
5
7
9
5
7
-9
-7
-5
-9
-7
8
9
10
8
9
-6
-5
-4
-6
-5
1
3
5
1
3
-10
-9
-8
-10
-9
2.0
2.2
2.4
20
22
respect to substrate voltage, but the current flows out
Electrical characteristics (Ta=25 °C)
Parameter
Output signal frequency*
8
-1107 (-01)
-1108 (-01)
-1109 (-01)
Horizontal shift register capacitance
Summing gate capacitance
Reset gate capacitance
Transfer gate capacitance
Charge transfer efficiency*
9
DC output level*
8
Output impedance*
8
Output amplifier return current*
10
Power consumption*
8
*
11
Vertical shift register
capacitance
Symbol
fc
C
P1V
, C
P2V
C
P1H
, C
P2H
C
SG
C
RG
C
TG
CTE
Vout
Zo
Iret
P
S13240/S13241 series
Min.
Typ.
Max.
-
2.5
10
-
1600
-
-
3200
-
-
6400
-
-
150
-
-
30
-
-
30
-
-
70
-
0.99995 0.99999
-
10
11
12
-
0.2
-
-
0.4
-
-
100
-
S10140/S10141 series (-01)
Min.
Typ.
Max.
-
0.25
0.5
-
1600
-
-
3200
-
-
6400
-
-
150
-
-
30
-
-
30
-
-
70
-
0.99995 0.99999
-
16
17
18
-
5
-
-
-
-
-
16
-
Unit
MHz
pF
pF
pF
pF
pF
-
V
kΩ
mA
mW
*8:
The values depend on the load resistance (S13240/S13241 series: V
OD
=16 V, R
L
=2.2 kΩ, S10140/S10141 series (-01): V
OD
=22 V,
R
L
=22 kΩ)
*9:
Charge transfer efficiency per pixel, measured at half of the saturation output
*10:
Absolute value
The current flows in the direction of flow out of the sensor.
*11:
Power consumption of the on-chip amp plus load resistance
3
CCD area image sensor
S13240/S13241 series, S10140/S10141 series (-01)
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Saturation output voltage
Full well capacity
Conversion efficiency
Dark current*
12
(MPP mode)
Readout noise*
13
Dynamic range*
14
Vertical
Horizontal
Summing
25 °C
0 °C
Line binning
Area scanning
Symbol
Vsat
Fw
CE
DS
Nread
Drange
λ
PRNU
White spots
Black spots
-
S13240/S13241 series
Min.
Typ.
Max.
-
Fw × CE
-
60
70
-
400
500
-
400
500
-
4.5
5.5
6.5
-
30
300
-
3
30
-
30
45
13333
16666
-
2000
2333
-
200 to 1100
-
±3
±10
-
-
0
-
-
10
-
-
3
-
-
0
S10140/S10141 series (-01)
Min.
Typ.
Max.
-
Fw × CE
-
60
70
-
400
500
-
400
500
-
4
5
6
-
30
300
-
3
30
-
4
18
100000 125000
-
15000
20000
-
200 to 1100
-
±3
±10
-
-
0
-
-
10
-
-
3
-
-
0
Unit
V
ke
-
µV/e
-
e
-
/pixel/s
e
-
rms
-
-
nm
%
-
-
-
-
Spectral response range
Photoresponse nonuniformity*
15
Point defect*
16
Blemish
Cluster defect*
17
Column defect*
18
*12:
Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*13:
Operating frequency 20 kHz, temperature -50 ºC [S10140/S10141 series (-01)]
Operating frequency 2.5 MHz, temperature 0 ºC (S13240/S13241 series)
*14:
Dynamic range=Saturation charge/Readout noise
*15:
Measured at one-half of the saturation output using LED light (peak emission wavelength: 470 nm)
Fixed pattern noise (peak to peak)
Photoresponse nonuniformity =
× 100 [%]
Signal
*16:
White spots
Pixels whose dark current is higher than 1 ke
-
after one-second integration at a cooling temperature of 0 °C
Black spots
Pixels whose sensitivity is lower than one half of the average pixel output (measured with uniform light producing one-half of the
saturation charge)
*17:
2 to 9 consecutive image defects
*18:
10 or more consecutive image defects
4
CCD area image sensor
S13240/S13241 series, S10140/S10141 series (-01)
Spectral response (without window)*
19
100
90
80
(Typ. Ta=25 °C)
Back-thinned
S13240/S13241 series,
S10140/S10141 series (-01)
Quantum efficiency (%)
70
60
50
40
30
Front-illuminated
(UV coat)
20
Spectral transmittance characteristics
Front-illuminated
(S7030-01/S7031-01 series, S7170/S7171-0909, S7986-01, S7987-01, S7988, S10140/S10141 series,
10
S9037/S9038 series,S10140-01/S10141-01 series)
Dark current vs. temperature
0
200
400
600
800
1000
1200
Wavelength (nm)
KMPDB0485EA
*19:
Spectral response with quartz glass or AR-coated sapphire are decreased according to the spectral transmittance characteristics
of window material.
Spectral transmittance characteristics
100
90
80
(Typ. Ta=25 °C)
Dark current vs. temperature
1000
(Typ.)
KMPDB0485EA
100
Transmittance (%)
70
60
50
40
30
20
10
Dark current (e
-
/pixel/s)
Quartz window
AR coated sapphire
10
1
0.1
0.01
0.001
-50 -40 -30 -20 -10
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
0
10
20
30
40
50
Wavelength (nm)
KMPDB0110EA
Temperature (°C)
KMPDB0255EC
KMPDB0110EA
KMPDB025
5
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