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S1J-KR2G

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
SMA, 2 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-214AC
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
最大重复峰值反向电压
600 V
最大反向恢复时间
1.5 µs
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
C BEND
端子位置
DUAL
文档预览
S1D-K - S1M-K
Taiwan Semiconductor
CREAT BY ART
1A, 200V - 1000V Surface Mount Rectifiers
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated V
R
Typical reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
T
J
=25°C
T
J
=125°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJL
R
θJA
T
J
T
STG
SYMBOL
S1D
-K
S1D
200
140
200
S1G
-K
S1G
400
280
400
S1J
-K
S1J
600
420
600
1
30
1.1
1
50
1.5
12
30
85
- 55 to +175
- 55 to +175
S1K
-K
S1K
800
560
800
S1M
-K
S1M
1000
700
1000
V
V
V
A
A
V
μA
μs
pF
°C/W
°C
°C
UNIT
Version: B1603
S1D-K - S1M-K
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
S1x-K
(Note 1, 2)
PACKING CODE
R3
R2
PACKING CODE
SUFFIX
G
SMA
SMA
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
PACKAGE
PACKING
Note 1: "x" defines voltage from 200V (S1D-K) to 1000V (S1M-K)
Note 2: Whole series with green compound
EXAMPLE
PREFERRED
PART NO.
S1M-K R3G
PART NO.
S1M-K
PACKING CODE
R3
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
1.2
1
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
(
o
C)
INSTANTANEOUS REVERSE CURRENT
(μA)
AVERAGE FORWARD CURRENT (A)
100
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
10
T
J
=125°C
1
0.1
T
J
=75°C
T
J
=25°C
RESISTIVE OR
INDUCTIVE LOAD
0.01
150
175
0.001
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
140
LEAD TEMPERATURE
PEAK FORWARD SURGE URRENT
(A)
100
8.3ms Single Half Sine Wave
INSTANTANEOUS FORWARD CURRENT
(A)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
10
10
1
Pulse Width=300μs
1% Duty Cycle
0.1
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
1.6
1.8
2
1
1
10
NUMBER OF CYCLES AT 60 Hz
100
Version: B1603
S1D-K - S1M-K
Taiwan Semiconductor
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
CAPACITANCE (pF)
10
f=1.0MHz
Vsig=50mVp-p
1
0.01
0.1
1
REVERSE VOLTAGE (V)
10
100
PACKAGE OUTLINE DIMENSIONS
DO-214AC (SMA)
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min
1.27
4.06
2.29
1.99
0.90
4.95
0.05
0.15
Max
1.58
4.60
2.83
2.50
1.41
5.33
0.20
0.31
Unit (inch)
Min
0.050
0.160
0.090
0.078
0.035
0.195
0.002
0.006
Max
0.062
0.181
0.111
0.098
0.056
0.210
0.008
0.012
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.68
1.52
3.93
2.41
5.45
Unit (inch)
0.066
0.060
0.155
0.095
0.215
MARKING DIAGRAM
P/N =
G=
YW =
F=
Marking code
Green Compound
Date Code
Factory Code
Version: B1603
S1D-K - S1M-K
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Version: B1603
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参数对比
与S1J-KR2G相近的元器件有:S1G-KR2G、S1K-KR2G、S1K-KR3G、S1D-KR2G、S1D-KR3G。描述及对比如下:
型号 S1J-KR2G S1G-KR2G S1K-KR2G S1K-KR3G S1D-KR2G S1D-KR3G
描述 Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, SMA, 2 PIN Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, SMA, 2 PIN Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AC, SMA, 2 PIN Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-214AC, SMA, 2 PIN Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, SMA, 2 PIN Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, SMA, 2 PIN
是否Rohs认证 符合 符合 符合 符合 符合 符合
厂商名称 Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
包装说明 SMA, 2 PIN SMA, 2 PIN SMA, 2 PIN SMA, 2 PIN SMA, 2 PIN SMA, 2 PIN
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC
JESD-30 代码 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
JESD-609代码 e3 e3 e3 e3 e3 e3
湿度敏感等级 1 1 1 1 1 1
元件数量 1 1 1 1 1 1
端子数量 2 2 2 2 2 2
最高工作温度 175 °C 175 °C 175 °C 175 °C 175 °C 175 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 1 A 1 A 1 A 1 A 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
最大重复峰值反向电压 600 V 400 V 800 V 800 V 200 V 200 V
最大反向恢复时间 1.5 µs 1.5 µs 1.5 µs 1.5 µs 1.5 µs 1.5 µs
表面贴装 YES YES YES YES YES YES
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 C BEND C BEND C BEND C BEND C BEND C BEND
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
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