S2A, S2B, S2D, S2G, S2J, S2K, S2M
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
1.5 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
50 A
1.0 μA
1.15 V
150 °C
DO-214AA (SMB)
Single die
DO-214AA (SMB)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
Package
Diode variations
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Max. repetitive peak reverse voltage
Max. RMS voltage
Max. DC blocking voltage
Max. average forward rectified current at T
L
= 100 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
S2A
SA
50
35
50
S2B
SB
100
70
100
S2D
SD
200
140
200
S2G
SG
400
280
400
1.5
50
- 55 to + 150
S2J
SJ
600
420
600
S2K
SK
800
560
800
S2M
SM
1000
700
1000
V
V
V
A
A
°C
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Max. instantaneous forward
voltage
Max. DC reverse current at
rated DC blocking voltage
Typical reverse recovery time
Typical junction capacitance
Revision: 14-Aug-13
TEST CONDITIONS
1.5 A
T
A
= 25 °C
T
A
= 125 °C
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
SYMBOL
V
F
I
R
t
rr
C
J
S2A
S2B
S2D
S2G
1.15
1.0
125
2.0
16
S2J
S2K
S2M
UNIT
V
μA
μs
pF
Document Number: 88712
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
S2A, S2B, S2D, S2G, S2J, S2K, S2M
www.vishay.com
Vishay General Semiconductor
SYMBOL
R
JA
R
JL
S2A
S2B
S2D
S2G
53
16
S2J
S2K
S2M
UNIT
°C/W
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
(1)
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad areas
ORDERING INFORMATION
(Example)
PREFERRED P/N
S2J-E3/52T
S2J-E3/5BT
S2JHE3/52T
(1)
S2JHE3/5BT
(1)
(1)
UNIT WEIGHT (g)
0.096
0.096
0.096
0.096
PREFERRED PACKAGE CODE
52T
5BT
52T
5BT
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
1.75
10
Instantaneous Forward Current (A)
Resistive or Inductive Load
Average Forward Current (A)
1.50
1.25
1.00
0.75
0.50
0.25
0
50
70
90
110
130
150
60 Hz Resistive or
Inductive Load
P.C.B. Mounted
0.27" x 0.27" (7.0 mm x 7.0 mm)
Copper Pad Areas
T
J
= 150 °C
1
T
J
= 125 °C
T
J
= 25 °C
0.1
0.01
0.3
0.5
0.7
0.9
1.1
1.3
Lead Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
50
1000
Instantaneous Reverse Current (µA)
Peak Forward Surge Current (A)
T
L
= 100 °C
8.3 ms Single Half Sine-Wave
40
T
J
= 150 °C
100
30
10
T
J
= 125 °C
20
1
T
J
= 25 °C
0.1
10
0
1
10
100
0.01
0
20
40
60
80
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Max. Non-Repetitive Peak Forward Surge Current
Fig. 4 - Typical Reverse Characteristics
Revision: 14-Aug-13
Document Number: 88712
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
S2A, S2B, S2D, S2G, S2J, S2K, S2M
www.vishay.com
Vishay General Semiconductor
100
100
10
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
10
1
0.1
1
10
100
1
0.01
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52) MIN.
0.220 (5.59) REF.
Revision: 14-Aug-13
Document Number: 88712
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000