JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
S9014
TO-92
1. EMITTER
TRANSISTOR (NPN)
FEATURES
High total power dissipation.(P
C
=0.45W)
High hFE and good linearity
Complementary to S9015
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
45
5
0.1
0.45
150
-55-150
Units
V
V
V
A
W
℃
℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
Test
conditions
MIN
50
45
5
0.1
0.1
0.1
60
1000
0.3
1
150
V
V
MHz
TYP
MAX
UNIT
V
V
V
μA
μA
μA
I
C
=100μA, I
E
=0
I
C
= 1mA, I
B
=0
I
E
=100μA, I
C
=0
V
CB
=50V, I
E
=0
V
CE
=35V, I
B
=0
V
EB
= 5V, I
C
=0
V
CE
=5V, I
C
= 1mA
I
C
=100mA, I
B
= 5mA
I
C
=100mA, I
B
= 5mA
V
CE
=5V, I
C
= 10mA
f=30MHz
CLASSIFICATION OF
Rank
Range
h
FE(1)
A
60-150
B
100-300
C
200-600
D
400-1000
Typical Characteristics
S9014
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