JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO – 92
S9018
TRANSISTOR (NPN)
1.EMITTER
FEATURES
High Current Gain Bandwidth Product
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
25
18
4
50
0.4
312.5
150
-55~+150
Unit
V
V
V
mA
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Test
conditions
Min
25
18
4
0.1
0.1
0.1
28
270
0.5
1.42
800
V
V
MHz
Typ
Max
Unit
V
V
V
nA
μA
μA
I
C
=100μA,I
E
=0
I
C
=0.1mA,I
B
=0
I
E
=100μA,I
C
=0
V
CB
=20V,I
E
=0
V
CE
=15V,I
B
=0
V
EB
=3V,I
C
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA,I
B
=1mA
I
C
=10mA,I
B
=1mA
V
CE
=5V,I
C
=50mA,f=400MHz
CLASSIFICATION OF h
FE
RANK
RANGE
D
28-45
E
39-60
F
54-80
G
72-108
H
97-146
I
132-198
J
180-270
A,Jun,2011
Typical Characteristics
10
S9018
h
FE
—— I
C
COMMON EMITTER
V
CE
=5V
T
a
=100
℃
T
a
=25
℃
Static Characteristic
100uA
COMMON
EMITTER
T
a
=25
℃
h
FE
DC CURRENT GAIN
20uA
I
B
=10uA
160
(mA)
90uA
8
I
C
80uA
70uA
6
120
COLLECTOR CURRENT
60uA
50uA
80
4
40uA
30uA
40
2
0
0
2
4
6
8
10
0
1
10
50
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1.0
V
BEsat
—— I
C
β=10
V
CEsat
——
0.3
I
C
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25
℃
0.8
0.1
T
a
=100
℃
T
a
=25
℃
T
a
=100
℃
0.6
0.4
0.1
1
10
50
0.01
1
10
50
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
I
C
(mA)
——
V
BE
COMMON EMITTER
V
CE
=5V
10
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
℃
T
a
=100
℃
(pF)
10
C
ib
COLLECTOR CURRENT
C
CAPACITANCE
C
ob
1
T
a
=25
℃
1
0.1
0.2
0.1
0.4
0.6
0.8
1.0
1.2
1
10
20
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
1200
f
T
——
I
C
0.5
P
C
——
T
a
(MHz)
TRANSITION FREQUENCY
800
COLLECTOR POWER DISSIPATION
P
C
(W)
1000
0.4
f
T
0.3
600
0.2
400
0.1
V
CE
=5V
T
a
=25
℃
200
1
3
10
20
0.0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
A,Jun,2011
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