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SB180

1 A, 80 V, SILICON, SIGNAL DIODE, DO-41
1 A, 80 V, 硅, 信号二极管, DO-41

器件类别：分立半导体    二极管   

厂商名称：SynSemi

厂商官网：http://www.synsemi.com/

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参数 预览 参数对比
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器件参数
参数名称
属性值
厂商名称
SynSemi
包装说明
O-PALF-W2
Reach Compliance Code
unknow
其他特性
HIGH RELIABILITY, LOW POWER LOSS
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-41
JESD-30 代码
O-PALF-W2
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-65 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
最大重复峰值反向电压
80 V
表面贴装
NO
技术
SCHOTTKY
端子形式
WIRE
端子位置
AXIAL
文档预览
SB120 - SB1B0
PRV : 20 - 100 Volts
I
O
: 1.0 Ampere
FEATURES :
*
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
High efficiency
Low power loss
Low forward voltage drop
Low cost
SCHOTTKY BARRIER
RECTIFIER DIODES
DO - 41
1.00 (25.4)
MIN.
0.107 (2.74)
0.080 (2.03)
0.205 (5.20)
0.160 (4.10)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.312 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375", 9.5mm Lead Length See Fig.1
Maximum Peak Forward Surge Current,
8.3ms single half sine wave Superimposed
on rated load (JEDEC Method) T
L
= 75°C
Maximum Forward Voltage at I
F
= 1.0 A (Note 2)
Maximum Reverse Current at
Rated DC Blocking Voltage (Note 1)
Typical Thermal Resistance (Note 2)
Junction Temperature Range
Storage Temperature Range
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV
)
SB SB SB SB SB SB SB SB SB
UNIT
120 130 140 150 160 170 180 190 1B0
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
1.0
70
49
70
80
56
80
90
63
90
100
70
100
V
V
V
A
I
FSM
V
F
I
R
I
R(H)
R
θ
JL
T
J
T
STG
- 40 to + 125
10
0.5
40
0.7
0.5
5.0
15
- 65 to + 150
- 65 to + 150
0.79
A
V
mA
mA
°C/W
°C
°C
Notes :
(1) Pulse Test : Pulse W idth = 300
µs,
Duty Cycle = 2%.
(2) Thermal Resistance from junction to lead, PC board Mounting with 0.375" (9.5mm) Lead Lengths.
Page 1 of 2
Rev. 01 : January 10, 2004
RATING AND CHARACTERISTIC CURVES ( SB120 - SB1B0 )
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,
AMPERES
1.25
SB150
THRU
SB1B0
SB120
SB130
SB140
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
1.00
PEAK FORWARD SURGE
CURRENT, AMPERES
150
175
40
0.75
30
0.50
20
0.25
10
0
0
25
50
75
100
125
0
1
2
4
6
10
20
40
60
100
LEAD TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
20
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MILLIAMPERES
10
T
J
= 100
°C
FORWARD CURRENT, AMPERES
10
SB120
SB130
SB140
SB180
SB190
SB1B0
1.0
1.0
SB150
SB160
SB170
0.1
T
J
= 25
°C
T
J
= 25
°C
PULSE W IDTH = 300µs
DUTY CYCLE = 2%
0.1
0.1
0.01
0
20
40
60
80
100
120
140
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
PERCENT OF RATED REVERSE
VOLTAGE, (%)
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 01 : January 10, 2004
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参数对比
与SB180相近的元器件有：SB120、SB130、SB150、SB160、SB1B0、SB170、SB190。描述及对比如下：
型号 SB180 SB120 SB130 SB150 SB160 SB1B0 SB170 SB190
描述 1 A, 80 V, SILICON, SIGNAL DIODE, DO-41 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 60 V, SILICON, SIGNAL DIODE, DO-41 1 A, 20 V, SILICON, SIGNAL DIODE, DO-41 1 A, 70 V, SILICON, SIGNAL DIODE 1 A, 90 V, SILICON, SIGNAL DIODE, DO-41
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
元件数量 1 1 1 1 1 1 1 1
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最大输出电流 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
最大重复峰值反向电压 80 V 20 V 30 V 50 V 60 V 100 V 70 V 90 V
表面贴装 NO NO NO NO NO NO NO NO
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
厂商名称 SynSemi SynSemi - SynSemi SynSemi SynSemi SynSemi SynSemi
包装说明 O-PALF-W2 - - - O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
其他特性 HIGH RELIABILITY, LOW POWER LOSS - - - HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS HIGH RELIABILITY, LOW POWER LOSS
外壳连接 ISOLATED - - - ISOLATED ISOLATED ISOLATED ISOLATED
二极管元件材料 SILICON - - - SILICON SILICON SILICON SILICON
JEDEC-95代码 DO-41 - - - DO-41 DO-41 DO-41 DO-41
JESD-30 代码 O-PALF-W2 - - - O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
端子数量 2 - - - 2 2 2 2
最低工作温度 -65 °C - - - -65 °C -65 °C -65 °C -65 °C
封装主体材料 PLASTIC/EPOXY - - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND - - - ROUND ROUND ROUND ROUND
封装形式 LONG FORM - - - LONG FORM LONG FORM LONG FORM LONG FORM
端子形式 WIRE - - - WIRE WIRE WIRE WIRE
端子位置 AXIAL - - - AXIAL AXIAL AXIAL AXIAL
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器件捷径:
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