SB170 - SB1100
1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER
Features
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Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
Surge Overload Rating to 25A Peak
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
High Temperature Soldering:
260°C/10 Second at Terminal
Plastic Material: UL Flammability
Classification Rating 94V-0
NEW PRODUCT
A
B
A
D
C
Mechanical Data
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Case: Molded Plastic
Terminals: Plated Leads -
Solderable per MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.3 grams (approx.)
Mounting Position: Any
Marking: Type Number
Dim
A
B
C
D
DO-41
Min
25.4
4.1
0.71
2.0
Max
¾
5.2
0.86
2.7
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
T
= 85°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage @ I
F
= 1.0A
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Lead
Typical Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Notes:
@ T
A
= 25°C
@ T
A
= 25°C
@ T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
qJL
R
qJA
T
j,
T
STG
@ T
A
= 25°C unless otherwise specified
SB170
70
49
SB180
80
56
1.0
25
0.80
0.5
10
80
15
50
SB190
90
63
SB1100
100
70
Unit
V
V
A
A
V
mA
pF
K/W
K/W
°C
-65 to +125
1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30116 Rev. B-1
1 of 2
SB170 - SB1100
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
20
10
NEW PRODUCT
I
(O),
AVERAGE FORWARD CURRENT (A)
1.0
0.5
1.0
T
j
= 25
°
C
I
F
Pulse Width = 300
µ
s
0
25
50
75
100
125
150
T
L
, LEAD TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
0.1
0.1
0.5
0.9
1.3
1.7
2.1
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
40
Single Half Sine-Wave
(JEDEC Method)
T
j
= 150
°
C
1000
30
C
j
, JUNCTION CAPACITANCE (pF)
T
j
= 25
°
C
f = 1.0MHz
20
100
10
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Fwd Surge Current
10
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
DS30116 Rev. B-1
2 of 2
SB170 - SB1100
NXP MCU
