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SB5100

5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201
5 A, 100 V, 硅, 整流二极管, DO-201

器件类别:半导体    分立半导体   

厂商名称:DAESAN

厂商官网:http://www.diodelink.com

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器件:SB5100

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器件参数
参数名称
属性值
端子数量
2
元件数量
1
加工封装描述
ROHS COMPLIANT, 塑料 PACKAGE-2
状态
ACTIVE
包装形状
包装尺寸
LONG FORM
端子形式
线
端子位置
AXIAL
包装材料
塑料/环氧树脂
工艺
SCHOTTKY
结构
单一的
壳体连接
隔离
二极管元件材料
二极管类型
整流二极管
应用
GENERAL PURPOSE
相数
1
最大重复峰值反向电压
100 V
最大平均正向电流
5 A
最大非重复峰值正向电流
250 A
文档预览
SB520 THRU SB5100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds at terminals,
0.375" (9.5mm) lead length, 5lbs. (2.3Kg) tension
CURRENT 5.0Amperes
VOLTAGE 20 to 100 Volts
DO-201AD
0.210(5.3)
0.188(4.8)
DIA.
1.0(25.4)
MIN.
0.375(9.5)
0.285(7.2)
Mechanical Data
· Case : JEDEC DO-201AD molded plastic body
· Terminals : Plated axial leads, solderable per
MIL-STD-750, Method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.041 ounce, 1.15 gram
0.042(1.1)
0.037(0.9)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length(see Fig. 1)
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC mothod at rated T
L
)
Maximum instantaneous forward voltage
at 5.0A (Note 1)
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
Typical junction capacitance (Note 3)
Typical thermal resistnce (Note 2)
Operating junction temperature range
Storage temperature range
T
A
=25℃
T
A
=100℃
I
R
C
J
JA
JL
T
J
T
STG
-65 to +125
-65 to +150
50
500
25.0
8.0
-65 to +150
V
RRM
V
RMS
V
DC
I(
AV
)
SB520
20
14
20
SB530
SB540
40
28
40
SB550
50
35
50
5.0
SB560
SB580 SB5100 Units
80
56
80
100
70
100
Volts
Volts
Volts
Amps
30
21
30
60
42
60
I
FSM
150.0
Amps
V
F
0.55
2.5
0.70
0.85
Volts
25
400
mA
P
F
℃/W
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to lead vrtical P.C.B. mounted, 0.375"(9.5mm) lead length
(3) Measured 1MHz and reverse voltage of 4.0 volts
RATINGS AND CHARACTERISTIC CURVES SB520 THRU SB5100
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
5.0
PEAK FORWARD SURGE
CURRENT(AMPERES)
4.0
3.0
2.0
1.0
0
0
20
40
60
80
100
120
150
──
SB520-SB540
- - - SB550-SB5100
RESISTIVE OR INDUCTIVE LOAD
0.375" (9.5MM) LEAD LENGTH
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
150
125
100
75
50
25
0
1
10
NUMBER OF CYCLES AT 60Hz
100
T
J
=T
J
MAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
LEAD TEMPERATURE (℃)
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT (AMPERES)
T
J
=150℃
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20
10
T
J
=125℃
INSTANTANEOUS REVERSE CURRENT MILL (AMPERES)
10
T
J
=125℃
1
T
J
=75℃
PULSE WIDTH=300
1% DUTY CYCLE
1
0.1
0.1
T
J
=25℃
──
SB520-SB540
- - - SB550-SB5100
0.01
T
J
=25℃
──
SB520-SB540
- - - SB550-SB5100
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.001
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5-TYPICAL JUNCTION CAPACITANCE
4000
JUNCTION CAPACITANCE(pF)
T
J
=25℃
f=1.0MHz
Vsig=50mVp-p
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
TRANSIENT THERMAL IMPEDANCE,℃/ W
10
1000
1
──
SB520-SB540
- - - SB550-SB5100
100
0.1
1
10
100
REVERSE VOLTAGE. VOLTS
0.1
0.01
0.1
1
T, PULSE DURATION, sec.
10
100
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参数对比
与SB5100相近的元器件有:SB520、SB530、SB540、SB550、SB560、SB580。描述及对比如下:
型号 SB5100 SB520 SB530 SB540 SB550 SB560 SB580
描述 5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201 5 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 30 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE 5 A, 80 V, SILICON, RECTIFIER DIODE, DO-201AD
端子数量 2 - 2 2 2 - -
元件数量 1 - 1 1 1 - -
状态 ACTIVE - DISCONTINUED ACTIVE TRANSFERRED ACTIVE -
包装形状 - - -
包装尺寸 LONG FORM - LONG FORM LONG FORM LONG FORM - -
端子形式 线 - 线 线 线 - -
端子位置 AXIAL - AXIAL AXIAL AXIAL - -
包装材料 塑料/环氧树脂 - 塑料/环氧树脂 塑料/环氧树脂 塑料/环氧树脂 - -
工艺 SCHOTTKY - SCHOTTKY SCHOTTKY SCHOTTKY - -
结构 单一的 - 单一的 单一的 单一的 - -
壳体连接 隔离 - 隔离 隔离 隔离 - -
二极管元件材料 - - -
二极管类型 整流二极管 - 整流二极管 整流二极管 整流二极管 RECTIFIER DIODE -
应用 GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE EFFICIENCY - -
相数 1 - 1 1 1 - -
最大重复峰值反向电压 100 V - 30 V 40 V 50 V - -
最大平均正向电流 5 A - 5 A 5 A 5 A - -
最大非重复峰值正向电流 250 A - 220 A 150 A 200 A - -
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