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SBR10U250CTB

Rectifier Diode, 1 Phase, 2 Element, 10A, 250V V(RRM), Silicon, TO-263AB, PLASTIC, TO-263, 3 PIN

器件类别：分立半导体    二极管   

厂商名称：Diodes

厂商官网：http://www.diodes.com/

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参数 预览 参数对比
器件参数
参数名称
属性值
厂商名称
Diodes
零件包装代码
D2PAK
包装说明
R-PSSO-G2
针数
4
Reach Compliance Code
unknown
ECCN代码
EAR99
应用
EFFICIENCY
配置
COMMON CATHODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
TO-263AB
JESD-30 代码
R-PSSO-G2
最大非重复峰值正向电流
150 A
元件数量
2
相数
1
端子数量
2
最高工作温度
175 °C
最低工作温度
-65 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
认证状态
Not Qualified
最大重复峰值反向电压
250 V
表面贴装
YES
端子形式
GULL WING
端子位置
SINGLE
文档预览
SBR10U250CT
SBR10U250CTF
SBR10U250CTI
SBR10U250CTB
Using state-of-the-art SBR IC process technology,
the following features are made possible in a single device:
Major ratings and characteristics
Values
Characteristics
I
F(AV)
Rectangular Waveform
V
RRM
V
F
@
5A, Tj=125
O
C
Tj
(operating/storage)
10
250
0.60
-65 to 175
Units
A
V
V, typ
O
C
Device optimized for low forward voltage drop to
maximize efficiency in Power Supply applications
ELECTRICAL:
*
Ultra-Low Forward Voltage Drop
*
Reliable High Temperature Operation
*
Super Barrier Design
*
Softest, fast switching capability
* 175
O
C
Operating Junction Temperature
MECHANICAL:
*
Molded Plastic TO-220AB, TO-262, TO-263, and
ITO-220 packages
Case Styles
SBR10U250CT
SBR10U250CTF
SBR10U250CTI
SBR10U250CTB
2
1
Anode
Common
Cathode
2
3
Anode
Anode
2
3
Anode
Anode
2
Anode
1
Common
Cathode
1
Common
Cathode
3
Anode
1
Common
Cathode
3
Anode
TO-220AB
ITO-220
TO-262
TO-263
________________________________________________________________________________________________
www.apdsemi.com
Version 2.0 - April 2006
1
SBR10U250CT
SBR10U250CTF
SBR10U250CTI
SBR10U250CTB
Maximum Ratings and Electrical Characteristics
(at 25
O
C unless otherwise specified)
SYMBOL
DC Blocking Voltage
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
(Rated V
R
-20Khz Square Wave) - 50% duty
cycle
Peak Forward Surge Current - 1/2 60hz
Peak Repetitive Reverse Surge Current
(2uS-1Khz)
Instantaneous Forward Voltage (per leg)
I
F
= 5A; T
J
= 25
O
C
I
F
= 10A; T
J
= 25
O
C
I
F
= 5A; T
J
= 125
O
C
Maximum Instantaneous Reverse Current at
Rated V
RM
T
J
= 25
O
C
T
J
= 125
O
C
Maximum Rate of Voltage Change
(at Rated V
R
)
Maximum Thermal Resistance JC (per leg)
Package = TO-220AB, TO-262, & TO-263
Package = ITO-220
Operating and Storage Junction Temperature
NOTE: Dice are available for customer applications.
* Pulse width < 300 uS, Duty cycle < 2%
UNITS
250
Volts
V
RM
V
RWM
V
RRM
I
O
10
Amps
I
FSM
I
RRM
Typ
---
---
---
Typ
---
---
150
3
Max
0.84
0.90
0.68
Max
200
25
10,000
Amps
Amps
V
F
Volts
I
R
*
uA
mA
V/uS
dv/dt
Rθ
JC
T
J
2
4
-65 to +175
O
C/W
O
C
________________________________________________________________________________________________
www.apdsemi.com
Version 2.0 - April 2006
2
SBR10U250CT
SBR10U250CTF
SBR10U250CTI
SBR10U250CTB
10
If, Instantaneous Forward Current (Amps)
Tj=175C
100
Ir, Reverse Current (mA)
1
Tj=125C
10
0.1
Tj=175C
Tj=75C
0.01
Tj=25C
1
Tj=125C
Tj=75C
Tj=25C
0.001
0.0001
0
50
100
150
200
250
300
Vr, Reverse Voltage (Volts)
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Vf, Instantaneous Forward Voltage (Volts)
Figure 1: Typical Reverse Current
Figure 2: Typical Forward Voltage
5
If, Average Forward Current (Amps)
4
3
2
1
0
0
25
50
75
100
125
150
175
Tc, Case Temp (C)
Figure 3: Current Derating, Case
APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APD SEMICONDUCTOR does not convey any license
under its patent rights nor the rights of others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer
purchase or use APD SEMICONDUCTOR products for any such unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent regarding the design or manufacture of the part..
1 Lagoon Drive, Suite 410, Redwood City, CA 94065, USA
Ph: 650 508 8896 FAX: 650 508 8865
Homepage: www.apdsemi.com
email: info@apdsemi.com
________________________________________________________________________________________________
www.apdsemi.com
Version 2.0 - April 2006
3
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参数对比
与SBR10U250CTB相近的元器件有：SBR10U250CTI。描述及对比如下：
型号 SBR10U250CTB SBR10U250CTI
描述 Rectifier Diode, 1 Phase, 2 Element, 10A, 250V V(RRM), Silicon, TO-263AB, PLASTIC, TO-263, 3 PIN Rectifier Diode, 1 Phase, 2 Element, 10A, 250V V(RRM), Silicon, TO-262AA, PLASTIC, TO-262, 3 PIN
厂商名称 Diodes Diodes
零件包装代码 D2PAK TO-262AA
包装说明 R-PSSO-G2 R-PSIP-T3
针数 4 3
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
应用 EFFICIENCY EFFICIENCY
配置 COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 TO-263AB TO-262AA
JESD-30 代码 R-PSSO-G2 R-PSIP-T3
最大非重复峰值正向电流 150 A 150 A
元件数量 2 2
相数 1 1
端子数量 2 3
最高工作温度 175 °C 175 °C
最低工作温度 -65 °C -65 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE IN-LINE
认证状态 Not Qualified Not Qualified
最大重复峰值反向电压 250 V 250 V
表面贴装 YES NO
端子形式 GULL WING THROUGH-HOLE
端子位置 SINGLE SINGLE
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