Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
SD101AWS
THRU
SD101CWS
Small Signal
Schottky Diodes
Features
l
l
l
Low Reverse Recovery Time
Low Reverse Capacitance
Low Forward Voltage Drop
l
Guard Ring Construction for Transient Protection
Mechanical Data
l
Case: SOD-323 plastic case
l
Terminals: Solderable per MIL-STD-202, Method 208
l
Polarity: Indicated by Cathode Band
SOD323
A
B
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Maximum sigle cycle surge 10us
square wave
Power Dissipation(Note 1)
Thermal Resistance, Junction to
Ambient
Junction Tmperature
Operation/Storage Temp. Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FSM
P
d
R
T
j
T
STG
42V
35V
2.0A
400mW
650°C/W
125 C
-55 to +150 C
o
o
C
E
SD101AWS SD101BWS SD101CWS
60V
50V
40V
H
D
28V
G
J
DIM
A
B
C
D
E
G
H
J
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
Charateristic
Symbol
Max
Leakage Current
SD101AWS
200nA
SD101BWS
I
R
200nA
SD101CWS
200nA
Maximum Forward SD101AWS
Voltage Drop SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
Junction Cap. SD101AWS
SD101BWS
SD101CWS
Reverse Recovery Time
0.41V
0.4V
.39V
1V
0.95V
0.9V
2.0pF
2.1pF
2.2pF
1ns
Test Condition
V
R
=50V
V
R
=40V
V
R
=30V
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.090
.107
2.30
2.70
.063
.071
1.60
1.80
.045
.053
1.15
1.35
.031
.045
0.80
1.15
.010
.016
0.25
0.40
.004
.018
0.10
0.45
.004
.010
0.10
0.25
-----
.006
-----
0.15
SUGGESTED SOLDER
PAD LAYOUT
0.074"
NOTE
V
F
I
F
=1mA
I
F
=15mA
0.027”
C
j
t
rr
V
R
=0V, f=1.0MHz
I
F
=I
R
=5mA, recover
to 0.1I
R
0.022”
Note
: 1. Valid provided that electrodes are kept at ambient temperature
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SD101AWS thru SD101CWS
Figure 1. Typical variation of forward. current vs.fwd.
Voltage for primary conduction through the
schottky barrier
mA
Figure 2. Typical forward conduction curve of combination
Schottky barrier and PN junction guard ring
mA
A
A
B
C
B
C
I
F
I
F
V
F
Figure 3.Typical variation of reverse current
at versus temperature
mA
V
F
Figure 4. Typical capacitance curve as a function
of reverse voltage
mA
A
B
C
I
R
I
R
V
R
V
R
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