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SDR936M

Rectifier Diode, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN

器件类别:分立半导体    二极管   

厂商名称:SSDI

厂商官网:http://www.ssdi-power.com/

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Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com *
www.ssdi-power.com
SDR936M&Z
thru
SDR939M&Z
30 AMPS
600 - 900 VOLTS
80 nsec
ULTRA FAST
RECTIFIER
TO-254(M)
TO-254(Z)
Designer’s Data Sheet
FEATURES:
Soft Recovery Diode
Ultra Fast Recovery: 80 nsec maximum
Available in faster recovery versions
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Package
Gold Eutectic Die Attach available
Ultrasonic Aluminum Wire Bonds
Ceramic Seals for improved hermeticity available
TX, TXV, and Space Level Screening Available
MAXIMUM RATINGS
Peak Repetitive Reverse
and DC Blocking Voltage
SDR936M&Z
SDR937M&Z
SDR938M&Z
SDR939M&Z
Symbol
V
RRM
V
RWM
V
R
I
O
Value
600
700
800
900
30
Units
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, T
A
=25
o
C)
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, T
A
=25
o
C)
Amps
I
FSM
500*
Amps
Operating and Storage Temperature Range
T
OP
T
stg
R
θJL
R
θJE
-65 to 200
o
C
Maximum Thermal Resistance
6
4
o
C/W
Note: 1/ * Pin 2&3 connected together; available with higher surge capacity.
2/ For best results, Pin 2&3 must be connected together in the application.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0073B
DOC
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com *
www.ssdi-power.com
SDR936M&Z
thru
SDR939M&Z
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage Drop
(IF=15 Adc, T
A
= 25
o
C, 300ms Pulse)
(IF=30 Adc, T
A
= 25°C, 300ms Pulse)
Instantaneous Forward Voltage Drop
(IF=15 Adc,T
A
= -55
o
C, 300ms Pulse)
(IF=15 Adc,T
A
= 100°C, 300ms Pulse)
Reverse Leakage Current
(Rated V
R
,
T
A
300ms Pulse minimum)
Junction Capacitance
(V
R
= 10 V
DC
, T
A
= 25
o
C, f = 1 MHz)
Reverse Recovery Time
(I
F
=500 mA, I
R
=1 A, I
RR
=250 mA, T
A
= 25
o
C)
Case Outline: TO-254(M)
Pin1: Cathode
Pin 2: Anode
Pin 3: Anode
Ø.150
.139
.685
.665
.750
.500
Symbol
V
F
Min
––
––
––
––
––
––
––
––
Max
1.25
1.40
1.15
1.35
100
100
150
80
Unit
Volts
Volts
Volts
Volts
µA
mA
pF
ns
V
F
T
A
= 25
o
C
T
A
= 100
o
C
I
R1
I
R2
C
J
t
rr
Case Outline: TO-254(Z)
Pin 1: Cathode
Pin 2: Anode
Pin 3: Anode
PIN 3
.545
.535
2x .155
.145
PIN 3
PIN 2
PIN 2
PIN 1
PIN 1
3x Ø.045
.035
.545
.535
.270
.240
.155
.140
.050
.040
.800
.790
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0073B
DOC
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参数对比
与SDR936M相近的元器件有:SDR937M、SDR939M、SDR938M、SDR939Z、SDR938Z、SDR937Z、SDR936Z。描述及对比如下:
型号 SDR936M SDR937M SDR939M SDR938M SDR939Z SDR938Z SDR937Z SDR936Z
描述 Rectifier Diode, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN 30 AMPS 600 - 900 VOLTS 80 nsec ULTRA FAST RECTIFIER Rectifier Diode, 1 Phase, 1 Element, 30A, 900V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN Rectifier Diode, 1 Phase, 1 Element, 30A, 800V V(RRM), Silicon, TO-254AA, TO-254, 3 PIN Rectifier Diode, 1 Phase, 1 Element, 30A, 900V V(RRM), Silicon, HERMETIC SEALED, TO-254Z, 3 PIN 30 AMPS 600 - 900 VOLTS 80 nsec ULTRA FAST RECTIFIER Rectifier Diode, 1 Phase, 1 Element, 30A, 700V V(RRM), Silicon, HERMETIC SEALED, TO-254Z, 3 PIN 30 AMPS 600 - 900 VOLTS 80 nsec ULTRA FAST RECTIFIER
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