型号
- 型号
- 关键词
IC DUAL OP-AMP, 3000 uV OFFSET-MAX, 3 MHz BAND WIDTH, CDIP8, CERDIP-8, Operational Amplifier
厂商名称：NXP(恩智浦)
厂商官网：https://www.nxp.com
下载文档| 型号 | SE5512FE | SE5512FE883B | NE5512FE |
|---|---|---|---|
| 描述 | IC DUAL OP-AMP, 3000 uV OFFSET-MAX, 3 MHz BAND WIDTH, CDIP8, CERDIP-8, Operational Amplifier | DUAL OP-AMP, 3MHz BAND WIDTH, CDIP8, CERDIP-8 | IC DUAL OP-AMP, 6000 uV OFFSET-MAX, 3 MHz BAND WIDTH, CDIP8, CERDIP-8, Operational Amplifier |
| 厂商名称 | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
| 零件包装代码 | DIP | DIP | DIP |
| 包装说明 | DIP, | DIP, | DIP, |
| 针数 | 8 | 8 | 8 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 放大器类型 | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER |
| 标称共模抑制比 | 100 dB | 100 dB | 100 dB |
| JESD-30 代码 | R-GDIP-T8 | R-GDIP-T8 | R-GDIP-T8 |
| 长度 | 9.955 mm | 9.955 mm | 9.955 mm |
| 标称负供电电压 (Vsup) | -15 V | -15 V | -15 V |
| 功能数量 | 2 | 2 | 2 |
| 端子数量 | 8 | 8 | 8 |
| 最高工作温度 | 125 °C | 125 °C | 70 °C |
| 最低工作温度 | -55 °C | -55 °C | - |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | DIP | DIP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.08 mm | 5.08 mm | 5.08 mm |
| 标称供电电压 (Vsup) | 15 V | 15 V | 15 V |
| 表面贴装 | NO | NO | NO |
| 技术 | BIPOLAR | BIPOLAR | BIPOLAR |
| 温度等级 | MILITARY | MILITARY | COMMERCIAL |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL |
| 标称均一增益带宽 | 3000 kHz | 3000 kHz | 3000 kHz |
| 宽度 | 7.62 mm | 7.62 mm | 7.62 mm |
| Objectid | 1420448027 | 1734374288 | - |
| compound_id | 8893599 | 5001133 | - |
| 最大平均偏置电流 (IIB) | 0.02 µA | - | 0.03 µA |
| 最大输入失调电压 | 3000 µV | - | 6000 µV |
| 标称压摆率 | 1 V/us | - | 1 V/us |
| 最大压摆率 | 5.5 mA | - | 5.5 mA |
