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SF26G

2 A, SILICON, RECTIFIER DIODE, DO-15

器件类别:半导体    分立半导体   

厂商名称:YEA SHIN TECHNOLOGY CO.,LTD

厂商官网:http://www.yeashin.com/

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器件:SF26G

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DATA SHEET
SEMICONDUCTOR
SUPERFAST RECOVERY RECTIFIERS
VOLTAGE - 50 to 8 00 Volts CURRENT - 2.0 Amperes
FEATURES
Superfast recovery times-epitaxial construction
Low forward voltage, high current capability
Exceeds environmental standards of MIL-S-19500/228
Hermetically sealed
Low leakage
High surge capability
Plastic package has Underwriters Laboratories
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound
High temperature soldering : 260
°C
/ 10 seconds at terminals
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
.300 (7.6)
.230 (5.8)
.140 (3.6)
.104 (2.6)
DIA.
1.0 (25.4)
MIN.
SF21G~SF28 G
DO-15
Unit:inch(mm)
MECHANICAL DATA
Case: Molded plastic, DO-15
Terminals: Axial leads, solderable to MIL-STD-202,
Method 208
Polarity: Color Band denotes cathode end
Mounting Position: Any
Weight: 0.015 ounce, 0.4 gram
.034 (.86)
.028 (.71)
DIA.
1.0 (25.4)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
°C
ambient temperature unless otherwise specified.
Resistive or inductive load, 60Hz.
SYMBOLS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Current .375"(9.5mm) lead length
at TA=55
°C
Peak Forward Surge Current, IFM (surge):
8.3ms single half sine-wave superimposed
on rated load(JEDEC method)
Maximum Forward Voltage at 2.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum DC Reverse Current at
Rated DC Blocking Voltage TA=125
°C
Maximum Reverse Recovery Time(Note 1)
Typical Junction capacitance (Note 2)
Typical Junction Resistance(Note 3)
Operating and Storage Temperature Range TJ
IR
TRR
CJ
RθJA
TJ,TSTG
VF
IR
0.95
5.0
200
35.0
22
40
-55 to +150
1.25
1.7
V
SF21G
50
35
50
SF22G
100
70
100
SF23G
150
105
150
SF24G
200
140
200
2.0
SF25G
300
210
300
SF26G
400
280
400
SF27G
600
420
600
SF28G
UNITS
800
560
800
V
V
V
VRRM
VRMS
VDC
I(AV)
A
IFSM
50.0
A
uA
uA
nS
pF
°C
/W
°C
NOTES:
1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
3. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted
http://www.yeashin.com
1
REV.02 20110725
RATINGS AND CHARACTERISTIC CURVES
SF21G~SF288G
RATING AND CHARACTERISTIC CURVES
4.0
60
AV E R A G E F O R WA R D R E C I F I E D
CURRENT AMPERES
3.0
SINGLE PHASE, HALF-WAVE, 60Hz RESISTIVE
OR INDUCTIVE LOAD .375" (9mm) LEAD LENGTHS
F O R WA R D S U R G E C U R R E N T,
AMPERES
50
40
30
2.0.
.
1.0.
.
0
0
20
40
60
80
100
120
O
20
10
140
160
180
1
2
5
10
20
50
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.1 MAXIMUM AVERAGE FORWARD CURRENT RATING
FIG.2 MAXIMUM NON-REPEITIVE SURGE CURRENT
100
100
T
J
= 125 C
O
I N S TA N TA N E O U S F O R WA R D C U R R E N T A M P E R E S
1000
I N V S TA N TA N E O U S R E V E R S E C U R R E N T,
MICROAMPERES
10
50-200V
300-400V
T
J
= 75 C
10
O
1.0
600-800V
1.0
T
J
= 25 C
O
0.1
T
J
= 25
O
C
0.1
20
40
60
80
100
120
.01
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
PERCENT OF RATED PEAK INVERSE VOLTGE, VOLTS
INSTANTANEOUS FORWARD VOLTAGE VOLTS
FIG.3 TYPICAL REVERSE CHARACTERISTICS
FIG.4 TYPICAL FORWARD CHARACTERISTICS
J U N C T I O N C A PA C I TA N C E , p F
60
50
40
30
20
10
0.1
0.5
1
5
10
20
50 100
200
500
1000
REVERSE VOLTAGE, VOLTS
FIG.5 TYPICAL JUNCTION CAPACITANCE
http://www.yeashin.com
2
REV.02 20110725
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参数对比
与SF26G相近的元器件有:SF21G、SF22G、SF23G、SF24G、SF25G、SF27G、SF28G。描述及对比如下:
型号 SF26G SF21G SF22G SF23G SF24G SF25G SF27G SF28G
描述 2 A, SILICON, RECTIFIER DIODE, DO-15 2 A, SILICON, RECTIFIER DIODE, DO-15 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-15 2 A, SILICON, RECTIFIER DIODE, DO-15 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 300 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 500 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-15
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