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SFH3410-4

PHOTOTRANSISTOR,NPN,570NM PEAK WAVELENGTH,20M,SMT

器件类别:光电子/LED    光电   

厂商名称:Osram Opto Semiconductor

厂商官网:https://www.osram.com/index-2.jsp

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
Osram Opto Semiconductor
Reach Compliance Code
compliant
最大暗电源
3 nA
JESD-609代码
e0
安装特点
SURFACE MOUNT
最大通态电流
0.02 A
最高工作温度
100 °C
最低工作温度
-40 °C
峰值波长
570 nm
表面贴装
YES
端子面层
Tin/Lead (Sn/Pb)
文档预览
2007-04-02
Silicon NPN Phototransistor with V
λ
Characteristics
NPN-Silizium-Fototransistor mit V
λ
-Charakteristik
Version 1.0
SFH 3410
Package:
Smart DIL
• Especially suitable for applications from 350 nm to
970 nm
• Adapted to human eye sensitivity (V
λ
)
• SMT package without base connection, suitable for
IR reflow soldering
• Only available on tape and reel
Features:
Gehäuse:
Smart DIL
• Speziell geeignet für Anwendungen im Bereich von
350 nm bis 970 nm
• Angepaßt an die Augenempfindlichkeit (V
λ
)
• SMT-Bauform ohne Basisanschluß, geeignet für
IR-Reflow-Löten
• Nur gegurtet lieferbar
Besondere Merkmale:
Applications
For control and drive circuits
Exposure meter for daylight and artificial light
Sensor for backlight-dimming
Ambient light detector
Anwendungen
Messen / Steuern / Regeln
Beleuchtungssensor
Dimmungssensor für Hintergrundbeleuchtung
Umgebungslichtsensor
Ordering Information
Bestellinformation
Type:
Typ:
Photocurrent
Fotostrom
E
v
= 20 lx, Std. Light A, V
CE
= 5 V
I
PCE
[µA]
SFH 3410
SFH 3410-1/2
SFH 3410-2/3
SFH 3410-3/4
3.2 ... 25
3.2 ... 10
5 ... 16
8 ... 25
Q65110A1211
Q65110A2653
Q65110A2654
Q65110A2655
Ordering Code
Bestellnummer
2007-04-02
1
Version 1.0
Maximum Ratings
(T
A
= 25 °C)
Grenzwerte
Parameter
Bezeichnung
Operating and storage temperature range
Betriebs- und Lagertemperatur
Collector-emitter voltage
Kollektor-Emitter-Spannung
Collector current
Kollektorstrom
Emitter-collector voltage
Emitter-Kollektor-Spannung
Characteristics
(T
A
= 25 °C)
Kennwerte
Parameter
Bezeichnung
Wavelength of max. sensitivity
Wellenlänge der max. Fotoempfindlichkeit
Radiant sensitive area
Bestrahlungsempfindliche Fläche
Dimensions of chip area
Abmessung der Chipfläche
Half angle
Halbwinkel
Capacitance
Kapazität
(V
CE
= 0 V, f = 1 MHz, E = 0)
Photocurrent
Fotostrom
(E
v
= 20 lx, Std. Light A, V
CE
= 5 V)
Dark current
Dunkelstrom
(V
CE
= 5 V, E = 0)
Symbol
Symbol
λ
S max
A
LxW
ϕ
C
CE
Values
Werte
570
0.29
0.75 x 0.75
± 60
3.9
Symbol
Symbol
T
op
; T
stg
V
CE
I
C
V
EC
Values
Werte
-40 ... 100
5.5
20
0.5
SFH 3410
Unit
Einheit
°C
V
mA
V
Unit
Einheit
nm
mm
2
mm x
mm
°
pF
I
PCE
> 3.2
µA
I
CE0
3 (≤ 50)
nA
2007-04-02
2
Version 1.0
Grouping
(T
A
= 25 °C)
Gruppierung
Group
Gruppe
Min Photocurrent
Min Fotostrom
Max Photocurrent
Max Fotostrom
SFH 3410
Collector-emitter
saturation voltage
Kollektor-Emitter
Sättigungsspannung
E
V
= 20 lx, Std. Light A, E
V
= 20 lx, Std. Light A, I
C
= I
PCEmin
x 0.3,
V
CE
= 5 V
V
CE
= 5 V
E
V
= 20 lx
I
PCE, min
[µA]
SFH 3410-1
SFH 3410-2
SFH 3410-3
SFH 3410-4
3.2
5
8
12.5
I
PCE, max
[µA]
6.3
10
16
25
V
CEsat
[mV]
100
100
100
100
Note.: I
PCEmin
is the min. photocurrent of the specified group
Anm.:
I
PCEmin
ist der minimale Fotostrom der jeweiligen Gruppe
Relative Spectral Sensitivity
Relative spektrale Empfindlichkeit
S
rel
= f(λ)
100
%
OHF00851
Photocurrent
Fotostrom
1000
OHF00852
μ
A
I
PCE
100
S
rel
80
70
60
50
40
30
20
10
0
400 500 600 700 800 900 nm 1100
λ
1
1
V
λ
10
10
100
lx 1000
E
V
2007-04-02
3
Version 1.0
Photocurrent
Fotostrom
I
PCE
/ I
PCE
(25°C)= f(T
A
), E
V
= 20 lx, V
CE
= 1 V ... 5 V
1.8
OHF01024
SFH 3410
Collector-Emitter Capacitance
Kollektor-Emitter Kapazität
C
CE
= f(V
CE
), f = 1 MHz, E = 0
4.0
pF
OHF04052
I
PCE
I
PCE (25 ˚C)
1.4
1.2
1.0
C
CE
3.0
2.5
2.0
0.8
1.5
0.6
0.4
0.2
0
-50 -30 -10
10
30
50
˚C 90
1.0
0.5
0
-3
10
10
-2
10
-1
10
0
10
1
V 10
2
T
A
Collector-Emitter Current
Kollektor-Emitter Strom
I
CE
= f(V
CE
; E
V
)
80
μ
A
OHF00854
V
CE
I
CE
70
60
50
40
30
20
10
0
200 lx
100 lx
20 lx
0
1
2
3
4
V 5
V
CE
2007-04-02
4
Version 1.0
Directional Characteristics
Winkeldiagramm
S
rel
= f(ϕ)
40
30
20
10
SFH 3410
ϕ
0
1.0
OHF01402
50
0.8
60
0.6
70
0.4
80
0.2
0
90
100
1.0
0.8
0.6
0.4
0
20
40
60
80
100
120
Package Outline
Maßzeichnung
0.8 (0.031)
0.6 (0.024)
Collector
0.8 (0.031)
0.4 (0.016)
1.15 (0.045)
0.95 (0.037)
1.9 (0.075)
2.7 (0.106)
2.5 (0.098)
1.1 (0.043)
Emitter
1.1 (0.043)
0.9 (0.035)
(not connected)
0.5 (0.020)
0.3 (0.012)
0.1 (0.004)
2.1 (0.083)
1.9 (0.075)
0.0 (0.000)
0.7 (0.028)
4.8 (0.189)
4.4 (0.173)
0.3 (0.012)
0.2 (0.008)
GEOY6028
Dimensions in mm (inch).
/
Maße in mm (inch).
2007-04-02
5
1.7 (0.067)
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参数对比
与SFH3410-4相近的元器件有:Q65110A2653、Q65110A2654、Q65110A1211。描述及对比如下:
型号 SFH3410-4 Q65110A2653 Q65110A2654 Q65110A1211
描述 PHOTOTRANSISTOR,NPN,570NM PEAK WAVELENGTH,20M,SMT PHOTO TRANSISTOR DETECTOR PHOTO TRANSISTOR DETECTOR PHOTO TRANSISTOR DETECTOR
厂商名称 Osram Opto Semiconductor Osram Opto Semiconductor Osram Opto Semiconductor Osram Opto Semiconductor
Reach Compliance Code compliant compliant unknow unknow
光电设备类型 - PHOTO TRANSISTOR PHOTO TRANSISTOR PHOTO TRANSISTOR
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