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SIT5155AICFK-25N0-10.949297X

Clipped Sine Output Oscillator, 10.949297MHz Nom,

器件类别：无源元件    振荡器   

厂商名称：SiTime

器件标准：

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
符合
Reach Compliance Code
compliant
Factory Lead Time
14 weeks
其他特性
TR
老化
1 PPM/FIRST YEAR
频率调整-机械
NO
频率稳定性
0.5%
JESD-609代码
e4
安装特点
SURFACE MOUNT
标称工作频率
10.949297 MHz
最高工作温度
85 °C
最低工作温度
-40 °C
振荡器类型
CLIPPED SINE
输出阻抗
10000 Ω
输出电平
0.8 V
物理尺寸
5.15mm x 3.35mm x 1.06mm
最大供电电压
2.75 V
最小供电电压
2.25 V
标称供电电压
2.5 V
表面贴装
YES
端子面层
Gold (Au) - with Nickel (Ni) barrier
Base Number Matches
1
文档预览
SiT5155
Description
PRELIMINARY
±0.5
ppm Elite Platform™ Precision Super-TCXO for GNSS/GPS
Features
The
SiT5155
is a ±0.5 ppm MEMS Super-TCXO
engineered for high accuracy GNSS based positioning and
timing applications.
By leveraging SiTime’s unique DualMEMS™ temperature
sensing and TurboCompensation™ technology, the
SiT5155 delivers the most stable timing in the presence of
environmental stressors – air flow, temperature
perturbation, vibration, shock and electromagnetic
interference (EMI). This device also integrates multiple on-
chip regulators, providing power supply noise filtering and
eliminating the need for a dedicated external LDO.
The SiT5155 offers three device configurations that can be
ordered with the associated
ordering codes:
1)
2)
3)
TCXO with non-pullable output frequency
VCTCXO allowing voltage control of output frequency
DCTCXO enabling digital control of the output
2
frequency through the I C interface
SiT5155 can be factory-programmed to any combination of
frequency, stability, voltage, and pull range. This
programmability enables designers to optimize the clock
configuration while eliminating the long lead time and
customization cost associated with quartz TCXOs where
each frequency is custom built.
13 common GNSS frequencies
Excellent dynamic stability under airflow and rapid
temperature change
±0.5 ppm over-temperature stability
±15
ppb/C frequency slope (ΔF/ΔT)
3e-11 ADEV at 10 second averaging time
No activity dips or micro jumps
Resistant to shock, vibration and board bending
Up to ±3200 ppm pull range (VCTCXO or DCTCXO)
2
Digital frequency pulling (DCTCXO) via I C
Digital control of output frequency and pull range
Frequency pull resolution as low as 5 ppt (0.005 ppb)
-40°C to +85°C operating temperature, contact
SiTime
for +105C option
2.5V, 2.8V, 3.0V and 3.3V supply voltage
On-chip regulators, eliminating the need for the
external LDO
LVCMOS or clipped sinewave output
RoHS and REACH compliant, Pb-free, Halogen-free
and Antimony-free
Applications
Precision GNSS for agriculture, construction and
Surveying
Precision GNSS for Mobile mapping, marine and
aerospace
GPS, Galileo, Beidou and other GNSS systems
Block Diagram
5.0 x 3.2 mm Package Pinout
SDA / NC
OE / VC / NC
SCL / NC
NC
GND
1
10
9
VDD
NC
NC
CLK
2
3
8
7
4
5
6
A0 / NC
Figure 1. SiT5155 Block Diagram
Figure 2. Pin Assignments (Top view)
(Refer to Table 9 for Pin Descriptions)
Rev 0.51
August 21, 2017
www.sitime.com
SiT5155
±0.5
ppm Elite Platform™ Precision Super-TCXO for GNSS/GPS
PRELIMINARY
TABLE OF CONTENTS
Description ..............................................................................................................................................................................1
Features ..................................................................................................................................................................................1
Applications.............................................................................................................................................................................1
Block Diagram .........................................................................................................................................................................1
5.0 x 3.2 mm Package Pinout ..................................................................................................................................................1
Electrical Characteristics .........................................................................................................................................................3
Modes of Operation and Pin-outs.............................................................................................................................................6
Pin-out Top Views ............................................................................................................................................................ 6
Test Circuit Diagrams for LVCMOS and Clipped Sinewave Outputs .........................................................................................7
Waveforms ..............................................................................................................................................................................9
Timing Diagrams ................................................................................................................................................................... 10
Architecture Overview ........................................................................................................................................................... 11
Functional Overview .............................................................................................................................................................. 11
Frequency Stability ......................................................................................................................................................... 11
Output frequency and format .......................................................................................................................................... 11
Output Frequency Tuning ............................................................................................................................................... 11
Pin 1 Configuration (OE, VC, or NC) ............................................................................................................................... 12
Operating Mode Descriptions ................................................................................................................................................ 13
TCXO Mode ................................................................................................................................................................... 13
VCTCXO Mode .............................................................................................................................................................. 14
Linearity ......................................................................................................................................................................... 15
Control Voltage Bandwidth ............................................................................................................................................. 15
FV Characteristic Slope K
V
............................................................................................................................................. 15
DCTCXO Mode .............................................................................................................................................................. 16
Pull Range, Absolute Pull Range ........................................................................................................................................... 16
I C Control Registers ............................................................................................................................................................. 21
Register Descriptions ............................................................................................................................................................ 21
Register Address: 0x00. Digital Frequency Control Least Significant Word (LSW) ........................................................... 21
Register Address: 0x01. OE Control, Digital Frequency Control Most Significant Word (MSW) ........................................ 22
Register Address: 0x02. DIGITAL PULL RANGE CONTROL .......................................................................................... 23
Register Address: 0x05. PULL-UP DRIVE STRENGTH CONTROL ................................................................................ 24
Register Address: 0x06. PULL-DOWN DRIVE STRENGTH CONTROL .......................................................................... 25
Serial Interface Configuration Description .............................................................................................................................. 26
Serial Signal Format .............................................................................................................................................................. 26
Parallel Signal Format ........................................................................................................................................................... 27
Parallel Data Format.............................................................................................................................................................. 27
I C Timing Specification......................................................................................................................................................... 29
I C Device Address Modes .................................................................................................................................................... 30
Schematic Example............................................................................................................................................................... 31
Dimensions and Patterns....................................................................................................................................................... 32
Ordering Information.............................................................................................................................................................. 33
2
2
2
Rev 0.51
Page 2 of 34
www.sitime.com
SiT5155
±0.5
ppm Elite Platform™ Precision Super-TCXO for GNSS/GPS
PRELIMINARY
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and 3.3V Vdd
Table 1. Output Characteristics
Parameters
Output Frequency Range
Symbol
F
Min.
Typ.
Max.
Unit
MHz
Condition
Frequency Coverage
10, 10.949297, 16.3676,
16.367667, 16.368, 16.369,
16.384, 20, 24.5535, 25, 26, 40
45
–
90%
–
0.8
-0.5
–
–
-1
–
–
–
First Year Aging
Start-up Time
First Pulse Accuracy
F_1y
T_start
T_stability
–
–
–
–
1
–
–
–
–
±15
±0.13
–
±20
±10
±10
±1
5
10
55
–
–
10%
1.2
+0.5
–
–
+1
–
–
–
–
–
–
LVCMOS Output Characteristics
Duty Cycle
Rise/Fall Time
Output Voltage High
Output Voltage Low
Output Voltage Level
Frequency Stability over Temperature
Frequency vs. Temperature Slope
Dynamic Frequency Change during
Temperature Ramp
Initial Tolerance
Supply Voltage Sensitivity
Output Load Sensitivity
DC
Tr, Tf
VOH
VOL
V_out
F_stab
ΔF/ΔT
F_dynamic
F_init
F_vdd
F_load
%
ns
Vdd
Vdd
V
ppm
ppb/°C
ppb/s
ppm
ppb
ppb
ppb
ppm
ms
ms
10% - 90% Vdd
I
OH
= -6 mA, (Vdd = 3.3 V, 3.0 V, 2.8 V, 2.5 V)
I
OL
= 6 mA, (Vdd = 3.3 V, 3.0 V, 2.8 V, 2.5 V)
Measured peak-to-peak swing at any Vdd
Referenced to (fmax + fmin)/2 over the specified
temperature range
F_stab = ±0.5 ppm
F_stab = ±0.5 ppm , 0.5C/min temperature ramp rate
Initial frequency at 25°C inclusive of solder-down
shift at 48 hours after 2 reflows
Vdd ±5%
LVCMOS output, 15 pF ±10%
Clipped sinewave output, 10kΩ, 10 pF ±10%
At 25°C
Time to first pulse, measured from the time Vdd
reaches 90% of its final value
Time to first accurate pulse within rated stability,
measured from the time Vdd reaches 90% of its final
value
Clipped Sinewave Output Characteristics
Frequency Stability
Start-up Characteristics
Rev 0.51
Page 3 of 34
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SiT5155
±0.5
ppm Elite Platform™ Precision Super-TCXO for GNSS/GPS
PRELIMINARY
Table 2. DC Characteristics
Parameters
Supply Voltage
Symbol
Vdd
Min.
2.25
2.52
2.7
2.97
Current Consumption
OE Disable Current
Operating Temperature Range
IDD
I_od
T_use
–
–
-20
-40
Typ.
2.5
2.8
3.0
3.3
Max.
2.75
3.08
3.3
3.63
Unit
V
V
V
V
mA
mA
°C
°C
F = 20 MHz, No Load
OE = GND, output is weakly pulled down
Extended commercial
Industrial. Contact
SiTime
for 105
°C
support
Condition
Contact
SiTime
for 2.25V to 3.63V continuous supply
voltage support
Supply Voltage
Current Consumption
–
40.5
40
–
–
–
Temperature Range
+70
+85
Table 3. Input Characteristics
Parameters
Input Impedance
Input High Voltage
Input Low Voltage
Pull Range
PR
Symbol
Z_in
VIH
VIL
Min.
–
70
–
Typ.
100
–
–
Max.
–
–
30
Unit
kΩ
%
%
2
Condition
Internal pull up to Vdd
Input Characteristics
–
OE Pin
Frequency Tuning Range – Voltage Control or I C mode
±6.25, ±10, ±12.5, ±25, ±50, ±80,
±100, ±125, ±150, ±200, ±400,
±600, ±800, ±1200, ±1600,
±3200
90%
–
10
–
Positive
–
2
ppm
Voltage Control Characteristics
Upper Control Voltage
Lower Control Voltage
Control Voltage Input Impedance
Control Voltage Input Bandwidth
Frequency Change Polarity
Pull Range Linearity
Input Voltage Low
Input Voltage High
Output Voltage Low
Output Current High
Leakage in high impedance mode
Input Hysteresis
Input Capacitance
Rise Time
Fall Time
VIL
VIH
VOL
IOL
I_leak
V_hys
C_in
Tr
Tf
VC_U
VC_L
VC_z
VC_c
–
–
–
10
0.5
–
–
–
–
–
–
–
–
–
–
–
–
10%
–
–
–
0.3
–
0.4
–
24
0.4
0.3
3
120
60
75
Vdd
Vdd
MΩ
kHz
%
2
Contact
SiTime
for other input bandwidth options
I C Interface Characteristics, 1 MHz, 200 Ohm, 550 pF (Max I C Bus Load)
–
0.7
–
21
5.5
0.2
0.2
–
–
30
40
V
V
V
mA
µA
V
V
pF
ns
ns
ns
Vdd = 3.3V, 30% to 70%
Vdd = 2.5V, 30% to 70%
0.1 Vdd< VOUT < 0.9 Vdd
Vdd = 3.3V
Vdd = 2.5V
Rev 0.51
Page 4 of 34
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SiT5155
±0.5
ppm Elite Platform™ Precision Super-TCXO for GNSS/GPS
PRELIMINARY
Table 4. Jitter & Phase Noise
Parameters
RMS Phase Jitter (random)
Spurs
RMS Period Jitter
Peak Cycle-to-Cycle Jitter
1 Hz offset
10 Hz offset
100 Hz offset
1 kHz offset
10 kHz offset
100 kHz offset
1 MHz offset
5 MHz offset
T_jitt
T_jitt_cc
Symbol
T_phj
Min.
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
0.35
-104
2
10
-70
-100
-130
-145
-152
-155
-162
-165
Max.
Jitter
–
–
–
–
Phase Noise
–
–
–
–
–
–
–
–
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
f = 10 MHz, TCXO and DCTCXO modes, and VCTCXO
mode with ±6.25 ppm pull range
ps
dBc
ps
ps
f = 10 MHz, Integration bandwidth = 12 kHz to 5 MHz
f = 10 MHz, 12 kHz to 5 MHz offsets
f = 10 MHz per JESD65 standard
f = 10 MHz per JESD65 standard
Unit
Condition
Table 5. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
Continuous Power Supply Voltage Range (Vdd)
Human Body Model (HBM) ESD Protection
Soldering Temperature (follow standard Pb-free
soldering guidelines)
Junction Temperature
[1]
Test Conditions
Value
-65 to 125
-0.5 to 4
Unit
°C
V
V
°C
°C
JESD22-A114
–
260
130
Note:
1. Exceeding this temperature for an extended period of time may damage the device.
Table 6. Thermal Considerations
Package
Ceramic 5.0 x 3.2 mm
[2]
JA, 4 Layer Board
(°C/W)
TBD
JA, 2 Layer Board
(°C/W)
TBD
JC, Bottom
(°C/W)
TBD
Note:
2. Refer to JESD51 for
JA
and
JC
definitions, and reference layout used to determine the
JA
and
JC
values in the above table.
Table 7. Environmental Compliance
Parameter
Mechanical Shock Resistance
Mechanical Vibration Resistance
Temperature Cycle
Solderability
Moisture Sensitivity Level
Test Conditions
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @260°C
Value
20,000
70
–
–
–
Unit
g
g
–
–
–
Rev 0.51
Page 5 of 34
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参数对比
与SIT5155AICFK-25N0-10.949297X相近的元器件有：SIT5155AI-FK-25VT-24.553500F、SIT5155AICFK-30VT-24.553500F、SIT5155AI-FK-28VT-24.553500F、SIT5155AI-FK-33VT-24.553500F、SIT5155ACCFKC33JS-10.949297T、SIT5155AC-FK333JQ-40.000000Y、SIT5155AI-FK-30VT-10.949297X、SIT5155ACCFKF33JS-40.000000、SIT5155ACCFKE28JX-40.000000。描述及对比如下：
型号 SIT5155AICFK-25N0-10.949297X SIT5155AI-FK-25VT-24.553500F SIT5155AICFK-30VT-24.553500F SIT5155AI-FK-28VT-24.553500F SIT5155AI-FK-33VT-24.553500F SIT5155ACCFKC33JS-10.949297T SIT5155AC-FK333JQ-40.000000Y SIT5155AI-FK-30VT-10.949297X SIT5155ACCFKF33JS-40.000000 SIT5155ACCFKE28JX-40.000000
描述 Clipped Sine Output Oscillator, 10.949297MHz Nom, LVCMOS Output Clock Oscillator, 24.5535MHz Nom, Clipped Sine Output Oscillator, 24.5535MHz Nom, LVCMOS Output Clock Oscillator, 24.5535MHz Nom, LVCMOS Output Clock Oscillator, 24.5535MHz Nom, Clipped Sine Output Oscillator, 10.949297MHz Nom, LVCMOS Output Clock Oscillator, 40MHz Nom, LVCMOS Output Clock Oscillator, 10.949297MHz Nom, Clipped Sine Output Oscillator, 40MHz Nom, Clipped Sine Output Oscillator, 40MHz Nom,
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合 符合 符合 符合
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant compliant
老化 1 PPM/FIRST YEAR 1 PPM/FIRST YEAR 1 PPM/FIRST YEAR 1 PPM/FIRST YEAR 1 PPM/FIRST YEAR 1 PPM/FIRST YEAR 1 PPM/FIRST YEAR 1 PPM/FIRST YEAR 1 PPM/FIRST YEAR 1 PPM/FIRST YEAR
频率调整-机械 NO NO NO NO NO NO NO NO NO NO
频率稳定性 0.5% 0.5% 0.5% 0.5% 0.5% 0.5% 0.5% 0.5% 0.5% 0.5%
安装特点 SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT SURFACE MOUNT
标称工作频率 10.949297 MHz 24.5535 MHz 24.5535 MHz 24.5535 MHz 24.5535 MHz 10.949297 MHz 40 MHz 10.949297 MHz 40 MHz 40 MHz
最高工作温度 85 °C 85 °C 85 °C 85 °C 85 °C 70 °C 70 °C 85 °C 70 °C 70 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C -40 °C -20 °C -20 °C -40 °C -20 °C -20 °C
振荡器类型 CLIPPED SINE LVCMOS CLIPPED SINE LVCMOS LVCMOS CLIPPED SINE LVCMOS LVCMOS CLIPPED SINE CLIPPED SINE
物理尺寸 5.15mm x 3.35mm x 1.06mm 5.15mm x 3.35mm x 1.06mm 5.15mm x 3.35mm x 1.06mm 5.15mm x 3.35mm x 1.06mm 5.15mm x 3.35mm x 1.06mm 5.15mm x 3.35mm x 1.06mm 5.15mm x 3.35mm x 1.06mm 5.15mm x 3.35mm x 1.06mm 5.15mm x 3.35mm x 1.06mm 5.15mm x 3.35mm x 1.06mm
最大供电电压 2.75 V 2.75 V 3.3 V 3.08 V 3.63 V 3.63 V 3.63 V 3.3 V 3.63 V 3.08 V
最小供电电压 2.25 V 2.25 V 2.7 V 2.52 V 2.97 V 2.97 V 2.97 V 2.7 V 2.97 V 2.52 V
标称供电电压 2.5 V 2.5 V 3 V 2.8 V 3.3 V 3.3 V 3.3 V 3 V 3.3 V 2.8 V
表面贴装 YES YES YES YES YES YES YES YES YES YES
Factory Lead Time 14 weeks 14 weeks 14 weeks 14 weeks 14 weeks - - 14 weeks - -
其他特性 TR TR TR TR TR - - TR - -
JESD-609代码 e4 - - - - e4 e4 e4 e4 e4
端子面层 Gold (Au) - with Nickel (Ni) barrier - - - - GOLD OVER NICKEL GOLD OVER NICKEL Gold (Au) - with Nickel (Ni) barrier GOLD OVER NICKEL GOLD OVER NICKEL
Base Number Matches 1 1 1 1 1 1 1 1 - -
厂商名称 - SiTime SiTime SiTime SiTime SiTime SiTime - SiTime SiTime
频率偏移/牵引率 - 6.25 ppm 6.25 ppm 6.25 ppm 6.25 ppm 1200 ppm 12.5 ppm 6.25 ppm 1200 ppm 400 ppm
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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