SM3116NAU
®
N-Channel Enhancement Mode MOSFET
Features
•
30V/60A,
R
DS(ON)
=5.7mΩ (Max.) @ V
GS
=10V
R
DS(ON)
=9mΩ (Max.) @ V
GS
=4.5V
Pin Description
D
S
G
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
D
Top View of TO-252-3
Applications
•
Power Management in Desktop Computer or
DC/DC Converters.
G
S
N-Channel MOSFET
Ordering and Marking Information
SM3116NA
Assembly Material
Handling Code
Temperature Range
Package Code
Package Code
U : TO-252-3
Operating Junction Temperature Range
C : -55 to 150
o
C
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
XXXXX - Date Code
SM3116NA U :
SM3116NA
XXXXX
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.1 - May., 2011
1
www.sinopowersemi.com
SM3116NAU
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D a
P
D
R
θJC
R
θJA
I
AS b
E
AS b
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
300µs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Avalanche Current, Single pulse (L=0.5mH)
Avalanche Energy, Single pulse (L=0.5mH)
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
Steady State
t
≤
10s
Steady State
Rating
30
±20
150
-55 to 150
20
140
90
60*
48
50
20
2.5
15
45
20
100
®
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
V
°C
°C
A
A
A
W
°C/W
°C/W
A
mJ
Note a：* Current limited by bond wire.
o
o
Note b：UIS tested and pulse width limi ted by maximum junction temperature 150 C (initial temperature T
j
=25 C).
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Parameter
(T
A
= 25°C unless otherwise noted)
Test Conditions
SM3116NAU
Min.
Typ.
Max.
Unit
V
GS
=0V, I
DS
=250µA
V
DS
=24V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=40A
T
J
=125°C
V
GS
=4.5V, I
DS
=20A
V
DS
=5V, I
DS
=40A
2
30
-
-
1.5
-
-
-
-
-
-
-
-
1.8
-
4.7
6.9
7
95
-
1
30
2.5
±100
5.7
-
9
-
V
µA
V
nA
mΩ
S
R
DS(ON) c
Drain-Source On-state Resistance
Gfs
Forward Transconductance
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.1 - May., 2011
www.sinopowersemi.com
SM3116NAU
Electrical Characteristics (Cont.)
Symbol
Diode Characteristics
V
SD
t
rr
c
®
(T
A
= 25°C unless otherwise noted)
Parameter
Test Conditions
SM3116NAU
Min.
Typ.
Max.
Unit
Diode Forward Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
I
SD
=20A, V
GS
=0V
-
-
-
-
-
0.8
21
13.2
7.8
17
1.1
-
-
-
-
V
ns
nC
Ω
pF
t
a
t
b
Q
rr
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
I
DS
=40A, dl
SD
/dt=100A/µs
Dynamic Characteristics
d
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DS
=15V, V
GS
=4.5V,
I
DS
=40A
V
DD
=15V, R
L
=15Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
-
-
-
-
-
-
-
-
2
1500
260
130
15
13
32
9
-
-
-
-
28
24
57
17
ns
Gate Charge Characteristics
d
Q
g
Q
g
Q
gth
Q
gs
Q
gd
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=15V, V
GS
=10V,
I
DS
=40A
-
-
-
-
-
14
30
3.3
6.5
5
-
41
-
-
-
nC
Note c
：Pulse
test ; pulse width≤300
µ
s, duty cycle≤2%.
Note d
：Guaranteed
by design, not subject to production testing.
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.1 - May., 2011
3
www.sinopowersemi.com
SM3116NAU
Typical Operating Characteristics
Power Dissipation
60
70
60
®
Drain Current
50
I
D
- Drain Current (A)
o
P
tot
- Power (W)
50
40
30
20
10
40
30
20
10
T
C
=25 C
0
20
40
60
80
100 120 140 160
0
0
T
C
=25 C,V
G
=10V
0
20
40
60
80 100 120 140 160
o
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature
Safe Operation Area
Normalized Transient Thermal Resistance
400
2
1
Thermal Transient Impedance
100
Rd
s(o
n)
Lim
it
Duty = 0.5
I
D
- Drain Current (A)
1ms
0.2
0.1
0.05
10ms
10
100ms
1s
DC
0.1
0.01
0.02
1
Single Pulse
0.1
0.01
T
C
=25 C
O
0.1
1
10
100
0.01
1E-4
Mounted on 1in pad
o
R
θ
JA
:15 C/W
2
1E-3
0.01
0.1
1
10
100
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.1 - May., 2011
4
www.sinopowersemi.com
SM3116NAU
Typical Operating Characteristics (Cont.)
Output Characteristics
140
120
100
80
60
40
20
0
0.0
3.5V
14
12
®
Drain-Source On Resistance
I
D
- Drain Current (A)
4V
R
DS(ON)
- On - Resistance (mΩ)
V
GS
= 4.5,5,6,7,8,9,10V
10
V
GS
=4.5V
8
6
4
2
0
V
GS
=10V
3V
0.5
1.0
1.5
2.0
2.5
3.0
0
20
40
60
80
100
120
140
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Gate-Source On Resistance
24
I
DS
=40A
21
1.4
1.6
Gate Threshold Voltage
I
DS
=250
µ
A
R
DS(ON)
- On - Resistance (mΩ)
18
15
12
9
6
3
0
Normalized Threshold Voltage
2
3
4
5
6
7
8
9
10
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75 100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.1 - May., 2011
5
www.sinopowersemi.com
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