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SMB8J22CA-M3/52

DIODE TVS DIODE, Transient Suppressor

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
Objectid
1154059224
包装说明
R-PDSO-C2
Reach Compliance Code
unknown
ECCN代码
EAR99
其他特性
EXCELLENT CLAMPING CAPABILITY
最大击穿电压
26.9 V
最小击穿电压
24.4 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-214AA
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值反向功率耗散
800 W
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
BIDIRECTIONAL
最大重复峰值反向电压
22 V
表面贴装
YES
技术
AVALANCHE
端子面层
Matte Tin (Sn)
端子形式
C BEND
端子位置
DUAL
处于峰值回流温度下的最长时间
30
文档预览
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
High Power Density Surface-Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Available in unidirectional and bidirectional
Available
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMB (DO-214AA)
LINKS TO ADDITIONAL RESOURCES
D
D
3
3
3D Models
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
V
BR
(unidirectional)
V
BR
(bidirectional)
V
WM
P
PPM
(unidirectional)
P
PPM
(bidirectional)
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
6.4 V to 49.1 V
6.4 V to 49.1 V
5.0 V to 40 V
1000 W
800 W
100 A
150 °C
Unidirectional, bidirectional
SMB (DO-214AA)
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case:
SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity:
for unidirectional types the color band denotes
cathode end, no marking on bidirectional types
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
(fig. 1)
Peak pulse current with a 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Revision: 20-Jul-2020
Document Number: 88422
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
unidirectional
bidirectional
SYMBOL
P
PPM (1)(2)
I
PPM (1)
I
FSM (2)
T
J
, T
STG
VALUE
1000
800
See next table
100
-55 to +150
UNIT
W
A
A
°C
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
UNIDIRECTIONAL
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
1AE
1AG
1AK
1AM
1AP
1AR
1AT
1AV
1AX
1AZ
1BE
1BG
1BK
1BM
1BP
1BR
1BT
1BV
1BX
1BZ
1CE
1CG
1CK
1CM
1CP
1CR
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
SMB10J5.0A
SMB10J6.0A
SMB10J6.5A
SMB10J7.0A
SMB10J7.5A
SMB10J8.0A
SMB10J8.5A
SMB10J9.0A
SMB10J10A
SMB10J11A
SMB10J12A
SMB10J13A
SMB10J14A
SMB10J15A
SMB10J16A
SMB10J17A
SMB10J18A
SMB10J20A
SMB10J22A
SMB10J24A
SMB10J26A
SMB10J28A
SMB10J30A
SMB10J33A
SMB10J36A
SMB10J40A
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
MAX.
7.07
7.37
7.98
8.60
9.21
9.83
10.4
11.1
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
TEST
CURRENT
I
T
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
1000
1000
500
200
100
50
20
10
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE SURGE
CURRENT
I
PPM (2)
(A)
108.7
97.1
89.3
83.3
77.5
73.5
69.4
64.9
58.8
54.9
50.3
46.5
43.1
41.0
38.5
36.2
34.2
30.9
28.2
25.7
23.8
22.0
20.7
18.8
17.2
15.5
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
Vishay General Semiconductor
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge current waveform per fig. 3 and derate per fig. 2
(3)
All terms and symbols are consistent with ANSI/IEEE C62.35
(4)
V = 3.5 V at I = 50 A (uni-directional only)
F
F
Revision: 20-Jul-2020
Document Number: 88422
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
BIDIRECTIONAL
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
SMB8J5.0CA
SMB8J6.0CA
SMB8J6.5CA
SMB8J7.0CA
SMB8J7.5CA
SMB8J8.0CA
SMB8J8.5CA
SMB8J9.0CA
SMB8J10CA
SMB8J11CA
SMB8J12CA
SMB8J13CA
SMB8J14CA
SMB8J15CA
SMB8J16CA
SMB8J17CA
SMB8J18CA
SMB8J20CA
SMB8J22CA
SMB8J24CA
SMB8J26CA
SMB8J28CA
SMB8J30CA
SMB8J33CA
SMB8J36CA
SMB8J40CA
DEVICE
MARKING
CODE
1AE
1AG
1AK
1AM
1AP
1AR
1AT
1AV
1AX
1AZ
1BE
1BG
1BK
1BM
1BP
1BR
1BT
1BV
1BX
1BZ
1CE
1CG
1CK
1CM
1CP
1CR
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
MAX.
6.40
7.25
6.67
7.37
7.22
7.98
7.78
8.60
8.33
9.21
8.89
9.83
9.44
10.4
10.0
11.1
11.1
12.3
12.2
13.5
13.3
14.7
14.4
15.9
15.6
17.2
16.7
18.5
17.8
19.7
18.9
20.9
20.0
22.1
22.2
24.5
24.4
26.9
26.7
29.5
28.9
31.9
31.1
34.4
33.3
36.8
36.7
40.6
40.0
44.2
44.4
49.1
TEST
CURRENT
I
T
(mA)
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
2000
2000
1000
400
200
100
40
20
10
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK PULSE
SURGE CURRENT
I
PPM (2)
(A)
87.0
77.7
71.4
66.7
62.0
58.8
55.6
51.9
47.1
44.0
40.2
37.2
34.5
32.8
30.8
29.0
27.4
24.7
22.5
20.6
19.0
17.6
16.5
15.0
13.8
12.4
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
9.2
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
Vishay General Semiconductor
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge current waveform per fig. 3 and derate per fig. 2
(3)
All terms and symbols are consistent with ANSI/IEEE C62.35
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
(1)
Typical thermal resistance, junction to lead
(1)
SYMBOL
R
θJA
R
θJL
VALUE
72
20
UNIT
°C/ W
Note
Mounted on minimum recommended pad layout
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMB10J5.0A-E3/52
SMB10J5.0A-M3/52
SMB10J5.0A-E3/5B
SMB10J5.0A-M3/5B
SMB10J5.0AHE3_A/H
(1)
SMB10J5.0AHM3_A/H
(1)
SMB10J5.0AHE3_A/I
(1)
SMB10J5.0AHM3_A/I
(1)
(1)
UNIT WEIGHT (g)
0.106
0.106
0.106
0.106
PREFERRED PACKAGE CODE
52
5B
H
I
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
Revision: 20-Jul-2020
Document Number: 88422
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
10 000
P
PPM
- Peak Pulse Power (kW)
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
10
SMB10J5.0 -
SMB10J40A
1000
1
SMB8J5.0C -
SMB8J40CA
100 µs
1.0 ms
10 ms
100
V
R
, Measured at
Stand-Off
Voltage V
WM
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
10
100
200
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
Bi-Directional
10
1
t
d
- Pulse Width (s)
V
WM
- Reverse Stand-Off Voltage (V)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 4 - Typical Junction Capacitance
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
100
75
50
Transient Thermal Impedance (°C/W)
10
25
0
0
25
50
75
100
125
150
175
200
1.0
0.01
0.1
1
10
100
1000
T
J
- Initial Temperature (°C)
t
p
- Pulse Duration (s)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 5 - Typical Transient Thermal Impedance
150
I
PPM
- Peak Pulse Current, % I
RSM
Peak Forward Surge Current (A)
t
r
= 10 µs
Peak Value
I
PPM
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where
the Peak Current
decays to 50 % of I
PPM
200
8.3
ms Single Half Sine-Wave
Uni-Directional Only
100
100
Half Value - I
PP
I
PPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
10
1
10
100
t - Time (ms)
Number of Cycles at 60 Hz
Fig. 3 - Pulse Waveform
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Revision: 20-Jul-2020
Document Number: 88422
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMB
(DO-214AA)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Vishay General Semiconductor
0.060 (1.52) MIN.
0.220 (5.59) REF.
Revision: 20-Jul-2020
Document Number: 88422
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
查看更多>
参数对比
与SMB8J22CA-M3/52相近的元器件有:SMB8J22CA-M3/5B。描述及对比如下:
型号 SMB8J22CA-M3/52 SMB8J22CA-M3/5B
描述 DIODE TVS DIODE, Transient Suppressor DIODE TVS DIODE, Transient Suppressor
Objectid 1154059224 1154059225
包装说明 R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
其他特性 EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
最大击穿电压 26.9 V 26.9 V
最小击穿电压 24.4 V 24.4 V
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码 DO-214AA DO-214AA
JESD-30 代码 R-PDSO-C2 R-PDSO-C2
JESD-609代码 e3 e3
湿度敏感等级 1 1
最大非重复峰值反向功率耗散 800 W 800 W
元件数量 1 1
端子数量 2 2
最高工作温度 150 °C 150 °C
最低工作温度 -55 °C -55 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260
极性 BIDIRECTIONAL BIDIRECTIONAL
最大重复峰值反向电压 22 V 22 V
表面贴装 YES YES
技术 AVALANCHE AVALANCHE
端子面层 Matte Tin (Sn) Matte Tin (Sn)
端子形式 C BEND C BEND
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 30 30
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