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SMF45A-M3-18

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
零件包装代码
DO-219AB
包装说明
R-PDSO-F2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
10 weeks
最小击穿电压
50 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-219AB
JESD-30 代码
R-PDSO-F2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值反向功率耗散
1000 W
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
UNIDIRECTIONAL
参考标准
IEC-61000-4-5
最大重复峰值反向电压
45 V
表面贴装
YES
技术
AVALANCHE
端子面层
Matte Tin (Sn)
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
30
Base Number Matches
1
文档预览
SMF5V0A to SMF58A
www.vishay.com
Vishay Semiconductors
Surface Mount ESD Protection Diodes
eSMP
®
Series
FEATURES
• 200 W peak pulse power capability with a
10/1000 μs waveform, repetition rate
(duty cycle): 0.01 %
• Low-profile package
Available
1
2
• Wave and reflow solderable
• ESD immunity acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
20278
SMF
(DO-219AB)
• ESD capability according to AEC-Q101:
human body model: class H3B: > 8 kV
Available
MARKING
(example only)
• Low incremental surge resistance, excellent clamping
capability
• “Low-Noise” technology - very fast response time
• AEC-Q101 qualified available
22623
Bar = cathode marking
YY = type code (see table below)
XX = date code
DESIGN SUPPORT TOOLS AVAILABLE
D
D
3
3
3D Models
XX
YY
Simulation
Tools
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
ORDERING INFORMATION
ENVIRONMENTAL AND QUALITY CODE
PART
RoHS-COMPLIANT +
NUMBER
TIN
AEC-Q101 LEAD (Pb)-FREE TERMINATIONS
(EXAMPLE) QUALIFIED
PLATED
STANDARD
HALOGEN-FREE
SMF5V0A-
SMF5V0A-
SMF5V0A-
SMF5V0A-
SMF5V0A-
SMF5V0A-
SMF5V0A-
SMF5V0A-
H
H
E
M
H
H
E
M
E
M
E
M
3
3
3
3
3
3
3
3
PACKAGING CODE
3K PER 7" REEL
(8 mm TAPE),
MOQ = 30K
-08
-08
-08
-08
-18
-18
-18
-18
10K PER 13" REEL
(8 mm TAPE),
MOQ = 50K
ORDERING CODE
(EXAMPLE)
SMF5V0A-E3-08
SMF5V0A-M3-08
SMF5V0A-HE3-08
SMF5V0A-HM3-08
SMF5V0A-E3-18
SMF5V0A-M3-18
SMF5V0A-HE3-18
SMF5V0A-HM3-18
PACKAGE DATA
PACKAGE
NAME
MOLDING WEIGHT
COMPOUND
(mg)
MOLDING
HEIGHT LENGTH WIDTH
COMPOUND
MAX.
MAX.
MAX.
FLAMMABILITY
(mm)
(mm)
(mm)
RATING
1.08
3.9
1.9
UL 94 V-0
MOISTURE
SENSITIVITY
LEVEL
MSL level 1
(acc. J-STD-020)
WHISKER TEST
ACC. JESD 201
SOLDERING
CONDITIONS
Peak temperature
max. 260 °C
Standard
SMF
(DO-219AB) Halogen-free
15
class 2
Rev. 1.7, 23-Oct-2019
Document Number: 85881
1
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMF5V0A to SMF58A
www.vishay.com
Vishay Semiconductors
TEST CONDITIONS
t
p
= 10/1000 μs waveform
SYMBOL
I
PPM
P
PP
I
FSM
V
ESD
R
thJA
V
F
T
J
T
stg
T
op
VALUE
see “Electrical
Characteristics”
1000
200
50
± 30
± 30
180
2.5
175
-65 to +175
-65 to +175
UNIT
A
W
W
A
kV
kV
K/W
V
°C
°C
°C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Peak pulse current
Peak pulse power
Peak forward surge current
ESD immunity
Thermal resistance
Forward clamping voltage
Junction temperature
Storage temperature range
Operating temperature range
t
p
= 8/20 μs waveform acc. IEC 61000-4-5
t
p
= 10/1000 μs waveform
8.3 ms single half sine-wave
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Mounted on epoxy glass PCB with 3 mm x 3 mm,
Cu pads (
40
μm thick)
I
F
= 50A, t
p
= 400 μs
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PART
NUMBER
TYPE CODE
MAXIMUM
REVERSE
MAXIMUM
MAXIMUM
REVERSE
BREAKDOWN
TEST
STAND-OFF REVERSE PEAK PULSE
CLAMPING
VOLTAGE
CURRENT VOLTAGE CURRENT
CURRENT
VOLTAGE
at I
T
,
at V
RWM
t
p
= 10/1000 μs
at I
PPM
t
p
= 5 ms
V
BR
MIN.
(V)
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40
44.4
47.8
50
53.3
56.7
60
64.4
I
T
(mA)
10
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
RWM
(V)
5
6
6.5
7
7.5
8
8.5
9
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
I
R
(μA)
5
26
20
3
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
I
PPM
(A)
21.7
19.4
17.9
16.7
15.5
14.7
13.9
13.5
11.8
11
10.1
9.3
8.6
8.2
7.7
7.2
6.8
6.2
5.6
5.1
4.8
4.4
4.1
3.8
3.4
3.1
2.9
2.8
2.6
2.4
2.25
2.1
V
C
MAX.
(V)
9.2
10.3
11.2
12
12.9
13.6
14.4
15.4
17
18.2
19.9
21.5
23.2
24.4
26
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
88
95
TYPICAL
CAP.
at V
R
= 0 V,
f = 1 MHz
C
D
TYP.
(pF)
1120
1063
938
843
773
706
674
640
562
509
483
423
392
367
343
324
320
283
271
244
230
227
207
198
178
172
165
162
161
151
148
144
PROTECTION
PATHS
STD.
SMF5V0A
SMF6V0A
SMF6V5A
SMF7V0A
SMF7V5A
SMF8V0A
SMF8V5A
SMF9V0A
SMF10A
SMF11A
SMF12A
SMF13A
SMF14A
SMF15A
SMF16A
SMF17A
SMF18A
SMF20A
SMF22A
SMF24A
SMF26A
SMF28A
SMF30A
SMF33A
SMF36A
SMF40A
SMF43A
SMF45A
SMF48A
SMF51A
SMF54A
SMF58A
AE
AG
AK
AM
AP
AR
AT
AV
AX
AZ
BE
BG
BK
BM
BP
BR
BT
BV
BX
BZ
CE
CG
CK
CM
CP
CR
CT
CV
CX
CZ
CA
CC
HALOGEN-
FREE
NE
NG
NK
NM
NP
NR
NT
NV
NX
NZ
OE
OG
OK
OM
OP
OR
OT
OV
OX
OZ
PE
PG
PK
PM
PP
PR
PT
PV
PX
PZ
PA
PC
N
channel
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Rev. 1.7, 23-Oct-2019
Document Number: 85881
2
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMF5V0A to SMF58A
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
120 %
Rise time = 0.7 ns to 1 ns
100 %
80 %
60 %
53 %
Vishay Semiconductors
I
RSM
(%)
100
90
t
1
= 10 µs
t
2
= 1000 µs
Discharge Current I
ESD
40 %
27 %
50
20 %
10
0%
-10 0 10 20 30 40 50 60 70 80 90 100
t
1
17415
t
t
2
20557
Time (ns)
Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330
/150pF)
Fig. 4 - Pulse Waveform
180
100 %
80 %
60 %
8 µs to 100 %
160
140
SMF43A
f = 1MHz
120
SMF45A
C
D
in pF
SMF48A
SMF54A
SMF58A
I
PPM
100
SMF51A
80
20 µs to 50 %
40 %
20 %
0%
0
10
20
30
40
60
40
20
0
0.01
22719
0.1
1
10
20548
Time (µs)
V
R
in V
Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5
Fig. 5 - Typical Capacitance C
D
vs. Reverse Voltage V
R
10
300
Non-repetitive pulse
T
A
= 25 °C
P
PP
- Peak Pulse Power (kW)
f = 1MHz
250
200
C
D
in pF
1
150
SMF22A
100
50
SMF24A
SMF26A
SMF28A
SMF30A
SMF33A
SMF36A
SMF40A
0.1
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
17250
0
0.01
22720
0.1
1
10
t
d
- Pulse Width (s)
Fig. 3 - Peak Pulse Power Rating
V
R
in V
Fig. 6 - Typical Capacitance C
D
vs. Reverse Voltage V
R
Rev. 1.7, 23-Oct-2019
Document Number: 85881
3
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMF5V0A to SMF58A
www.vishay.com
Vishay Semiconductors
f = 1MHz
20
18
16
SMF16A
SMF15A
SMF14A
600
500
400
SMF13A
SMF12A
SMF11A
SMF10A
SMF9V0A
C
D
in pF
300
SMF11A
SMF12A
200
SMF13A
SMF14A
SMF15A
SMF
100
SMF16A
SMF17A
SMF18A
SMF20A
V
R
in V
14
12
10
8
SMF8V5A
T
J
= Junction Temperature =
  
°C
25
 
 
0
0.01
22721
0.1
1
10
22724
0.01
1
100
10 000
V
R
in V
I
R
in μA
Fig. 7 - Typical Capacitance C
D
vs. Reverse Voltage V
R
Fig. 10 - Typical Reverse Voltage V
R
vs. Reverse Current I
R
1200
1000
800
f = 1MHz
40
SMF33A
SMF30A
SMF28A
35
C
D
in pF
30
600
400
200
20
0
SMF5V0A
SMF6V0A
SMF6V5A
SMF7V0A
SMF7V5A
SMF8V0A
SMF8V0
SMF8V5A
SMF9V0A
SMF10A
SMF26A
SMF24A
SMF22A
V
R
in V
25
SMF20A
SMF18A
20
SMF17A
T
J
= Junction Temperature =   25 °C
 
0.01
22722
0.1
1
10
15
0.01
22725
1
100
10 000
V
R
in V
I
R
in μA
Fig. 8 - Typical Capacitance C
D
vs. Reverse Voltage V
R
Fig. 11 - Typical Reverse Voltage V
R
vs. Reverse Current I
R
10
SMF8V0A
70
65
60
SMF6V5A
SMF6V0A
SMF5V0A
T
J
= Junction Temperature = 25 °C
 
    
SMF58A
SMF54A
SMF51A
SMF48A
9
8
SMF7V5A
SMF7V0A
V
R
in V
V
R
in V
7
6
5
4
0.01
55
SMF45A
50
45
SMF43A
SMF40A
SMF36A
T
J
= Junction Temperature =
  
°C
 
25
1
100
10 000
40
0.01
22726
1
100
10 000
22723
I
R
in μA
I
R
in μA
Fig. 9 - Typical Reverse Voltage V
R
vs. Reverse Current I
R
Fig. 12 - Typical Reverse Voltage V
R
vs. Reverse Current I
R
Rev. 1.7, 23-Oct-2019
Document Number: 85881
4
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SMF5V0A to SMF58A
www.vishay.com
PACKAGE DIMENSIONS
in millimeters (inches):
SMF (DO-219AB)
0.85 [0.033]
0.35 [0.014]
Vishay Semiconductors
1.8 [0.071] min.
0.25 [0.010]
0.05 [0.002]
1.2 [0.047]
0.8 [0.031]
1.9 [0.075]
1.7 [0.067]
0.1 [0.004]
0 [0.000]
Detail Z
enlarged
2.9 [0.114]
2.7 [0.106]
3.9 [0.154]
3.5 [0.138]
1.08 [0.043]
0.88 [0.035]
foot print recommendation:
Reflow
soldering
1.3 [0.051]
1.3 [0.051]
1.4 [0.055]
2.9 [0.114]
Created - Date: 15. February 2005
Rev. 5 - Date: 09. Oct. 2017
Document no.: S8-V-3915.01-001 (4)
22989
Rev. 1.7, 23-Oct-2019
Document Number: 85881
5
For technical questions, contact:
ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
查看更多>
参数对比
与SMF45A-M3-18相近的元器件有:SMF5V0A-HE3-08。描述及对比如下:
型号 SMF45A-M3-18 SMF5V0A-HE3-08
描述
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
厂商名称 Vishay(威世) Vishay(威世)
零件包装代码 DO-219AB DO-219AB
包装说明 R-PDSO-F2 R-PDSO-F2
针数 2 2
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
Factory Lead Time 10 weeks 10 weeks
最小击穿电压 50 V 6.4 V
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码 DO-219AB DO-219AB
JESD-30 代码 R-PDSO-F2 R-PDSO-F2
JESD-609代码 e3 e3
湿度敏感等级 1 1
最大非重复峰值反向功率耗散 1000 W 1000 W
元件数量 1 1
端子数量 2 2
最高工作温度 150 °C 150 °C
最低工作温度 -55 °C -55 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260
极性 UNIDIRECTIONAL UNIDIRECTIONAL
参考标准 IEC-61000-4-5 AEC-Q101; IEC-61000-4-5
最大重复峰值反向电压 45 V 5 V
表面贴装 YES YES
技术 AVALANCHE AVALANCHE
端子面层 Matte Tin (Sn) Matte Tin (Sn)
端子形式 FLAT FLAT
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 30 30
热门器件
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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