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SMS24.TC

350 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE

器件类别：分立半导体    二极管   

厂商名称：SEMTECH

厂商官网：http://www.semtech.com

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参数 预览 参数对比
器件参数
参数名称
属性值
是否无铅
含铅
零件包装代码
SOT-23
包装说明
R-PDSO-G6
针数
6
Reach Compliance Code
unknow
ECCN代码
EAR99
其他特性
TRANSIENT PROTECTION
最小击穿电压
26.7 V
最大钳位电压
43 V
配置
COMMON ANODE, 4 ELEMENTS
最小二极管电容
60 pF
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
R-PDSO-G6
最大非重复峰值反向功率耗散
350 W
元件数量
4
端子数量
6
最高工作温度
125 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性
UNIDIRECTIONAL
认证状态
Not Qualified
最大重复峰值反向电压
24 V
最大反向电流
1 µA
表面贴装
YES
技术
AVALANCHE
端子形式
GULL WING
端子位置
DUAL
Base Number Matches
1
文档预览
TVS Diode Array
For ESD and Latch-Up Protection
PROTECTION PRODUCTS
Description
The SMS series of TVS arrays are designed to protect
sensitive electronics from damage or latch-up due to
ESD and other voltage-induced transient events. Each
device will protect up to four lines. They are available
with operating voltages of 5V, 12V, 15V and 24V. They
are unidirectional devices and may be used on lines
where the signal polarities are above ground.
TVS diodes are solid-state devices designed specifically
for transient suppression. They feature large cross-
sectional area junctions for conducting high transient
currents. They offer desirable characteristics for board
level protection including fast response time, low
operating and clamping voltage and no device degrada-
tion.
The SMS series devices may be used to meet the
immunity requirements of IEC 61000-4-2, level 4. The
low cost SOT23-6L package makes them ideal for use
in portable electronics such as cell phones, PDA’s, and
notebook computers.
SMS05 through SMS24
Features
Transient protection for data lines to
IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
IEC 61000-4-4 (EFT) 40A (5/50ns)
IEC 61000-4-5 (Lightning) 24A (8/20µs)
Small package for use in portable electronics
Protects four I/O lines
Working voltages: 5V, 12V, 15V and 24V
Low leakage current
Low operating and clamping voltages
Solid-state silicon avalanche technology
Mechanical Characteristics
EIAJ SOT23-6L package
Molding compound flammability rating: UL 94V-0
Marking : Marking Code
Packaging : Tape and Reel per EIA 481
Applications
Cell phone Handsets and Accessories
Microprocessor Based Equipment
Personal Digital Assistants (PDA’s) and Pagers
Desktops PC and Servers
Notebook, Laptop, and Palmtop Computers
Portable Instrumentation
Peripherals
MP3 Players
Cordless Phones
Circuit Diagram
Schematic & PIN Configuration
SOT23-6L (Top View)
Revision 08/11/04
1
www.semtech.com
SMS05 through SMS24
PROTECTION PRODUCTS
Absolute Maximum Rating
R ating
Peak Pulse Power (tp = 8/20µs)
ESD Voltage (HBM p er IEC 61000-4-2)
Lead Soldering Temp erature
Op erating Temp erature
Storage Temp erature
Symbol
P
p k
V
ESD
T
L
T
J
T
STG
Value
350
>25
260 (10 sec.)
-55 to +125
-55 to +150
Units
Watts
kV
°C
°C
°C
Electrical Characteristics
SMS05
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamp ing Voltage
Clamp ing Voltage
Peak Pulse Current
Junction Cap acitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
I
P P
C
j
I
t
= 1mA
V
RWM
= 5V, T=25°C
I
PP
= 5A, t
p
= 8/20µs
I
PP
= 24A, t
p
= 8/20µs
t
p
= 8/20µs
Between I/O Pins and
Ground
V
R
= 0V, f = 1MHz
325
6
20
9.8
14.5
24
400
Conditions
Minimum
Typical
Maximum
5
Units
V
V
µA
V
V
A
pF
SMS12
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamp ing Voltage
Clamp ing Voltage
Peak Pulse Current
Junction Cap acitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
I
P P
C
j
I
t
= 1mA
V
RWM
= 12V, T=25°C
I
PP
= 5A, t
p
= 8/20µs
I
PP
= 15A, t
p
= 8/20µs
t
p
= 8/20µs
Between I/O Pins and
Ground
V
R
= 0V, f = 1MHz
135
13.3
1
19
23
15
150
Conditions
Minimum
Typical
Maximum
12
Units
V
V
µA
V
V
A
pF
2004 Semtech Corp.
2
www.semtech.com
SMS05 through SMS24
PROTECTION PRODUCTS
Electrical Characteristics
(Continued)
SMS15
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamp ing Voltage
Clamp ing Voltage
Peak Pulse Current
Junction Cap acitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
I
P P
C
j
I
t
= 1mA
V
RWM
= 15V, T=25°C
I
PP
= 5A, t
p
= 8/20µs
I
PP
= 12A, t
p
= 8/20µs
t
p
= 8/20µs
Between I/O Pins and
Ground
V
R
= 0V, f = 1MHz
100
16.7
1
24
29
12
125
Conditions
Minimum
Typical
Maximum
15
Units
V
V
µA
V
V
A
pF
SMS24
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamp ing Voltage
Clamp ing Voltage
Peak Pulse Current
Junction Cap acitance
Symbol
V
RWM
V
BR
I
R
V
C
V
C
I
P P
C
j
I
t
= 1mA
V
RWM
= 24V, T=25°C
I
PP
= 5A, t
p
= 8/20µs
I
PP
= 8A, t
p
= 8/20µs
t
p
= 8/20µs
Between I/O Pins and
Ground
V
R
= 0V, f = 1MHz
60
26.7
1
40
44
8
75
Conditions
Minimum
Typical
Maximum
24
Units
V
V
µA
V
V
A
pF
2004 Semtech Corp.
3
www.semtech.com
SMS05 through SMS24
PROTECTION PRODUCTS
Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
Peak Pulse Power - P
pk
(kW)
Power Derating Curve
110
100
90
% of Rated Power or I
PP
80
70
60
50
40
30
20
10
0
1
0.1
0.01
0.1
1
10
Pulse Duration - t
p
(µs)
100
1000
0
25
50
75
100
o
125
150
Ambient Temperature - T
A
( C)
Pulse Waveform
110
100
90
80
Percent of I
PP
70
60
50
40
30
20
10
0
0
5
10
15
Time (µs)
20
25
30
td = I
PP
/2
e
-t
Clamping Voltage vs. Peak Pulse Current
45
Waveform
Parameters:
tr = 8µs
td = 20µs
40
Clamping Voltage - V
C
(V)
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
Peak Pulse Current - I
PP
(A)
SMS05
SMS15
SMS12
SMS24
Waveform
Parameters:
tr = 8µs
td = 20µs
Forward Voltage vs. Forward Current
5
4.5
Forward Voltage - V
F
(V)
4
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10
15
20
25
30
35
40
45
Forward Current - I
F
(A)
Waveform
Parameters:
tr = 8µs
td = 20µs
2004 Semtech Corp.
4
www.semtech.com
SMS05 through SMS24
PROTECTION PRODUCTS
Applications Information
Device Connection for Protection of Four Data Lines
The SMSxx is designed to protect up to four unidirec-
tional data lines. The device is connected as follows:
1. Unidirectional protection of four I/O lines is
achieved by connecting pins 1, 3, 4 and 6 to the
data lines. Pin 2 and 5 are connected to ground.
The ground connections should be made directly to
the ground plane for best results. The path length
is kept as short as possible to reduce the effects
of parasitic inductance in the board traces.
Circuit Board Layout Recommendations for Suppres-
sion of ESD
Good circuit board layout is critical for the suppression
of ESD induced transients. The following guidelines are
recommended:
Place the SMSxx near the input terminals or con-
nectors to restrict transient coupling.
Minimize the path length between the SMSxx and
the protected line.
Minimize all conductive loops including power and
ground loops.
The ESD transient return path to ground should be
kept as short as possible.
Never run critical signals near board edges.
Use ground planes whenever possible.
Matte Tin Lead Finish
Matte tin has become the industry standard lead-free
replacement for SnPb lead finishes. A matte tin finish
is composed of 100% tin solder with large grains.
Since the solder volume on the leads is small com-
pared to the solder paste volume that is placed on the
land pattern of the PCB, the reflow profile will be
determined by the requirements of the solder paste.
Therefore, these devices are compatible with both
lead-free and SnPb assembly techniques. In addition,
unlike other lead-free compositions, matte tin does not
have any added alloys that can cause degradation of
the solder joint.
Protection of Four Unidirectional Lines
SMSxx Circuit Diagram
2004 Semtech Corp.
5
www.semtech.com
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参数对比
与SMS24.TC相近的元器件有：SMS05.TC、SMS05、SMS05_04、SMS24、SMS05.TCT、SMS12.TC、SMS15.TC、SMS24.TCT、SMS15.TCT。描述及对比如下：
型号 SMS24.TC SMS05.TC SMS05 SMS05_04 SMS24 SMS05.TCT SMS12.TC SMS15.TC SMS24.TCT SMS15.TCT
描述 350 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 350 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 350 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 350 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 200 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 350 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 350 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 350 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 350 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE 350 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
是否无铅 含铅 含铅 含铅 - 含铅 不含铅 含铅 含铅 不含铅 不含铅
零件包装代码 SOT-23 SOT-23 SOT-23 - SOT-23 - SOT-23 SOT-23 - -
包装说明 R-PDSO-G6 R-PDSO-G6 SOT-23, 6 PIN - R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-6 HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-6
针数 6 6 6 - 6 6 6 6 6 6
Reach Compliance Code unknow unknow unknow - unknow compli unknow unknow compli compli
ECCN代码 EAR99 EAR99 EAR99 - EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 TRANSIENT PROTECTION TRANSIENT PROTECTION - - - TRANSIENT PROTECTION TRANSIENT PROTECTION TRANSIENT PROTECTION TRANSIENT PROTECTION TRANSIENT PROTECTION
最小击穿电压 26.7 V 6 V 6 V - 26.7 V 6 V 13.3 V 16.7 V 26.7 V 16.7 V
最大钳位电压 43 V 9.8 V 9.8 V - 43 V 9.8 V 19 V 24 V 40 V 24 V
配置 COMMON ANODE, 4 ELEMENTS COMMON ANODE, 4 ELEMENTS COMMON ANODE, 4 ELEMENTS - COMMON ANODE, 4 ELEMENTS COMMON ANODE, 4 ELEMENTS COMMON ANODE, 4 ELEMENTS COMMON ANODE, 4 ELEMENTS COMMON ANODE, 4 ELEMENTS COMMON ANODE, 4 ELEMENTS
最小二极管电容 60 pF 400 pF 400 pF - 60 pF - 150 pF 100 pF - -
二极管元件材料 SILICON SILICON SILICON - SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE - TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 - R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6 R-PDSO-G6
最大非重复峰值反向功率耗散 350 W 350 W 350 W - 350 W 350 W 350 W 350 W 350 W 350 W
元件数量 4 4 4 - 4 4 4 4 4 4
端子数量 6 6 6 - 6 6 6 6 6 6
最高工作温度 125 °C 125 °C 125 °C - 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -55 °C -55 °C -55 °C - -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性 UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL - UNIDIRECTIONAL UNIDIRECTIONAL BID UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
认证状态 Not Qualified Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 24 V 5 V 5 V - 24 V 5 V 12 V 15 V 24 V 15 V
最大反向电流 1 µA 20 µA 20 µA - 1 µA - 1 µA 1 µA - -
表面贴装 YES YES YES - YES YES YES YES YES YES
技术 AVALANCHE AVALANCHE AVALANCHE - AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
端子形式 GULL WING GULL WING GULL WING - GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL - DUAL DUAL DUAL DUAL DUAL DUAL
是否Rohs认证 - 不符合 不符合 - 不符合 符合 - - 符合 符合
厂商名称 - SEMTECH SEMTECH - SEMTECH SEMTECH SEMTECH SEMTECH SEMTECH SEMTECH
JESD-609代码 - e0 e0 - e0 e3 - - e3 e3
峰值回流温度（摄氏度） - 225 NOT SPECIFIED - NOT SPECIFIED 260 - - 260 260
端子面层 - Tin/Lead (Sn/Pb) TIN LEAD - TIN LEAD Matte Tin (Sn) - - Matte Tin (Sn) Matte Tin (Sn)
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED
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器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
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